Growth conditions of InxSey films by molecular beam deposition

Materials Science and Engineering B

Volumn 3, Issue 1-2, 1989, Pages 13-17

  Emery, J Y ^a   Brahim Otsmane, L ^a   Jouanne, M ^a   Julien, C ^a   Balkanski, M ^a  

^a SORBONNE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BATTERIES, SECONDARY--ELECTRODES; SEMICONDUCTING FILMS--GROWTH; X-RAY ANALYSIS;

INTERCALATION CATHODES; MOLECULAR BEAM DEPOSITION; SOLID STATE IONICS; SUBSTRATE TEMPERATURE; THIN FILMS; X-RAY DIFFRACTION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0024701792     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(89)90172-4     Document Type: Article

References (20)

1. NATO Adv. Study Inst. Ser., Ser. B
2. Dependence of optical absorption of amorphous InSe films on temperature of heat treatment
3. Revised and new crystal data for indium selenides
4. The crystal structure of tetraindium triselenide
5. Phys. Status Solidi(b)
6. Raman Spectra of α- and γ-In2Se3