MBE growth mechanism of ZnSe: Growth rate and surface coverage

Journal of Crystal Growth

Volumn 96, Issue 3, 1989, Pages 513-518

  Zhu, Ziqiang ^a   Nomura, Takashi ^a   Miyao, Masahiro ^a   Hagino, Minoru ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS--DIFFRACTION; MOLECULAR BEAM EPITAXY;

REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0024700128     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(89)90046-8     Document Type: Article

References (9)

1. MBE growth mechanisms of ZnSe.
2. RHEED Observation on (001)ZnSe Surface: MBE Surface Phase Diagram and Kinetic Behavior of Zn And Se Adatoms
3. Reflection high-energy electron diffraction observations during growth of ZnSxSe1−x(0≤x≤1) by molecular-beam epitaxy