Accurate efficiency determination of a Si(Li) detector in the Si-K and Au-M absorption edge energy region

Nuclear Inst. and Methods in Physics Research, B

Volumn 42, Issue 3, 1989, Pages 346-358

  Pajek, M ^a   Kobzev, A P ^b   Sandrik, R ^b   Ilkhamov, R A ^c   Khusmurodov, S H ^c  

^a JAN KOCHANOWSKI UNIVERSITY   (Poland)

^b JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

^c NATIONAL UNIVERSITY OF UZBEKISTAN   (Uzbekistan)

Author keywords

[No Author keywords available]

Indexed keywords

IONIZATION; SEMICONDUCTING SILICON; SEMICONDUCTOR COUNTERS; X-RAYS--SPECTRUM ANALYSIS;

PARTICLE-INDUCED X-RAY EMISSION; PIXE METHOD;

PARTICLE DETECTORS;

EID: 0024699881     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(89)90446-1     Document Type: Article

References (33)

1. Accurate efficiency calibration and properties of semiconductor detectors for low-energy photons
2. Extending a model-based efficiency calibration of a Si(Li) detector below the Si K-edge
3. Efficiency calibration of a Si(Li) X-ray detector in the 1.5–60 keV energy region
4. Measurement of the spectral efficiency of energy dispersive Si(Li) detectors below 5 keV photon energy using BESSY as a standard source
5. Atomic radiative and radiationless yields for K and L shells