Drift–diffusion versus energy model for millimetre‐wave impatt diodes modelling

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Volumn 2, Issue 2, 1989, Pages 61-73

  Dalle, C ^a   Rolland, P A ^a  

^a UNIV LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; MILLIMETER WAVES; SEMICONDUCTING SILICON;

IMPACT IONIZATION; RF POWER LEVELS;

SEMICONDUCTOR DIODES, IMPATT;

EID: 0024686349     PISSN: 08943370     EISSN: 10991204     Source Type: Journal    
DOI: 10.1002/jnm.1660020202     Document Type: Article

References (28)

1. A proposed high frequency negative resistance diode
2. Negative resistance in P–N junctions under avalanche breakdown conditions (I and II)
3. Avalanche diode oscillator. I. Basic concepts
4. Large‐signal analysis on a Silicon Read diode oscillator
5. Semiconductor device simulation
6. IMPATT device simulation and properties
7. Simulations of GaAs IMPATT diodes including energy and velocity transport equations
8. Simplified particle simulation of mm‐wave IMPATT devices
9. Modelling of sub‐micro devices
10. Monte Carlo determination of electron transport properties in Gallium Arsenide
11. Two dimensional particle models in seconductor device analysis
12. Monte Carlo simulation of submicron GaAs n + ‐ i(n) ‐ n + diode
13. An efficient technique for two‐dimensional simulation of velocity overshoot effects in Si and GaAs devices
14. Theoretical contribution to the design of millimetre waves TED's
15. An accurate numerical one‐dimensional solution of the P–N junction under arbitrary transient conditions
16. Influence of non uniform field distribution on frequency limits of GaAs field effect transistors
17. Large‐scale numerical simulation in semiconductor device modelling
18. Electron and hole mobilities in silicon as a function of concentration and temperature
19. A review of some charge transport properties of silicon
20. Electron and hole ionization rates in epitaxial silicon at high electric fields
21. Impact ionization of electrons in silicon (steady state)
22. MBE GaAs IMPATT diodes with reduced drift region for mm‐wave frequencies