A Comparison of GaAs Hjbt and Silicon Bipolar Technologies for High-Speed Analog-to-Digital Converters

IEEE Journal of Solid-State Circuits

Volumn 24, Issue 3, 1989, Pages 609-616

  Joy, Andrew K ^a   Holden, Anthony J ^a   Leslie, Thomas C ^a   Saul, Peter H ^a  

^a Plessey Research Caswell   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE--APPLICATIONS; SEMICONDUCTING SILICON--APPLICATIONS; TRANSISTORS, BIPOLAR--APPLICATIONS;

ANALOG-DIGITAL CONVERSION; BIPOLAR GALLIUM ARSENIDE TECHNOLOGY; BIPOLAR INTEGRATED CIRCUITS; SILICON BIPOLAR TECHNOLOGIES;

DATA CONVERSION, ANALOG TO DIGITAL;

EID: 0024682738     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.32015     Document Type: Article

References (11)

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9. S. Evans et al., “GaAs HBT LSI/VLSI fabrication technology,” in GaAs IC Symp. Dig. Tech. Papers, Oct. 1987, pp. 109–112.
10. A. K. Old et al., “High performance GaAs/AlGaAs heterojunction bipolar transistor 4-bit and 2-bit A/D converters and 8-bit D/A converter,” in GaAs IC Symp. Dig. Tech. Papers, Oct. 1987, pp. 137–140.
11. T. Waldmoto et al., “Silicon bipolar 2GS/s 6b flash A/D conversion LSI,” in ISSCC Dig. Tech. Papers, Feb. 1988, pp. 232–233.