Double epitaxy improves single-photon avalanche diode performance

Electronics Letters

Volumn 25, Issue 13, 1989, Pages 841-843

  Lacaita, A ^a   Ghioni, M ^a   Cova, S ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

Avalanche diodes; Epitaxy and epitaxial growth; Semiconductor devices and materials; Silicon

Indexed keywords

PHOTONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES, PHOTODIODE;

DOUBLE EPITAXY; GEIGER-MODE; SEMICONDUCTOR AVALANCHE PHOTODIODES; SINGLE-PHOTON AVALANCHE DIODES;

SEMICONDUCTOR DIODES, AVALANCHE;

EID: 0024682479     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19890567     Document Type: Article

References (8)

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7. Ghioni, M., Cova, S., Lacaita, A., And Ripamonti, G.: ‘New silicon epitaxial avalanche diode for single-photon timing at room temperature’, Electron. Lett., 1988, 24, pp. 1476-1477
8. Ripamonti, G., And Cova, S.: ‘Carrier diffusion effects in the time response of a fast photodiode’, Solid-State Electron., 1985, 28, pp. 925-931