In situ reflection high energy electron diffraction observation during growth of YBa2Cu3O7-x thin films by activated reactive evaporation

Japanese Journal of Applied Physics

Volumn 28, Issue 6A, 1989, Pages L987-L990

  Terashima, Takahito ^a   Iijima, Kenji ^b,d   Yamamoto, Kazunuki ^b,e   Hirata, Kazuto ^b,f   Bando, Yoshichika ^a   Takada, Toshio ^c  

^a KYOTO UNIVERSITY   (Japan)

^b RESEARCH INSTITUTE FOR PRODUCTION DEVELOPMENT   (Japan)

^c OKAYAMA UNIVERSITY OF SCIENCE   (Japan)

^d PANASONIC CORPORATION   (Japan)

^e UBE INDUSTRIES LTD   (Japan)

^f Innovative Materials Development Center   (Japan)

Author keywords

Epitaxial growth; In situ reflection high energy electron diffraction; Layer by layer growth; Thin film; YBa2Cu3o7_x

Indexed keywords

CERAMIC MATERIALS; ELECTRONS--DIFFRACTION; YTTRIUM COMPOUNDS;

HIGH TEMPERATURE SUPERCONDUCTORS; OXIDE SUPERCONDUCTORS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; YTTRIUM BARIUM COPPER OXIDES;

SUPERCONDUCTING MATERIALS;

EID: 0024681785     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.28.L987     Document Type: Article

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