Numerical Modeling of Nonplanar Oxidation Coupled with Stress Effects

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 8, Issue 6, 1989, Pages 599-607

  Umimoto, Hiroyuki ^a   Odanaka, Shinji ^a   Nakao, Ichiro ^a   Esaki, Hideya ^b  

^a Semiconductor Research Center Matsushita Electric Industrial Company Ltd ^*

^b PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTIONS--REACTION KINETICS; INTEGRATED CIRCUITS, VLSI--COMPUTER SIMULATION; MATHEMATICAL TECHNIQUES--FINITE DIFFERENCE METHOD; STRESSES;

COORDINATE TRANSFORMATION METHOD; LOCOS PROCESS; NONPLANAR OXIDE GROWTH; OXIDATION KINETIC EQUATIONS; STRESS EFFECTS;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0024681606     PISSN: 02780070     EISSN: 19374151     Source Type: Journal    
DOI: 10.1109/43.31516     Document Type: Article

References (17)

1. D. Chin, S.Y. Oh, S.M. Hu, R.W. Dutton, and J.L. Moll, “Two-dimensional oxidation,” IEEE Trans. Electron Devices, vol. ED-30, pp. 744–749, July 1983.
2. H. Matsumoto and M. Fukuma, “Numerical modeling of nonuniform Si thermal oxidation,” IEEE Trans. Electron Devices, vol. ED-32, pp. 132–140, Feb. 1985.
3. R.B. Marcus and T.T. Sheng, “The oxidation of shaped silicon surfaces,” J. Eleclrochem. Soc., vol. 129, no. 6, pp. 1278–1282, June 1982.
4. D.B. Kao, J.P. McVittie, W.D. Nix, and K.C. Saraswat, “Two-dimensional silicon oxidation experiments and theory,” in IEDM Tech. Dig., 1985, pp. 388–391.
5. A. Poncet, “Finite-element simulation of local oxidation of silicon,” IEEE Trans. Computer-Aided Design, vol. CAD-4, pp. 41–53, Jan. 1985.
6. T.L. Tung and D.A. Antoniadis, “A boundary integral equation approach to oxidation modeling,” IEEE Trans. Electron Devices, vol. ED-32, pp. 1954–1959, Oct. 1985.
7. L. Borucki and J. Slinkman, “An efficient finite element algorithm for modeling Two-dimensional oxidation and impurity redistribution in silicon,” in Proc. 4th Conf Numerical Analysis of Semiconductor Devices and Integrated Circuits, 1985, pp. 226–233.
8. S. Isomae, S. Yamamoto, S. Aoki, and A. Yajima, “Oxidation-induced stress in a LOCOS structure,” IEEE Electron Device Lett., vol. EDL-7, pp. 368–370, June 1986.
9. P. Sutardja, W.G. Oldham, and D.B. Kao, “Modeling of stress-effects in silicon oxidation including the Nonlinear viscosity of oxide,” in IEDM Tech. Dig., 1987, pp. 264–267.
10. H. Umimoto, S. Odanaka, and 1. Nakao, “Simulation of stress-dependent oxide growth at the convex and concave corners of trench structures,” in 1988 Symp. VLSI Tech. Dig., pp. 47–48.
11. T.L. Tung, D.A. Antoniadis, and J. Connor, “Modeling stress effects in thermal oxidation with the boundary element method,” in NUPAD II Tech. Dig., 1988.
12. S. Odanaka, H. Umimoto, M. Wakabayashi, and H. Esaki, “SMART-P: Rigorous Threedimensional process simulator on a supercomputer,” IEEE Trans. Computer-Aided Design, vol. 7, pp. 675–683, June 1988.
13. B.E. Deal and A.S. Grove, “General relationship for the thermal oxidation of silicon,” J. Appl. Phys., vol. 36, no. 12, pp. 37703778, Dec. 1965.
14. E.P. Eernisse, “Viscous flow of thermal Si02,” Appl. Phys. Lett., vol. 30, no. 6, pp. 290–293, Mar. 1977.
15. R.B. Penumalli, “A comprehensive Two-dimensional VLSI process simulator program, BICEPS,” IEEE Trans. Electron Devices, vol. ED-30, pp. 986–992, Sept. 1983.
16. B.A. Carre, “The determination of the optimum accelerating factor for successive over-relaxation,” Comput. J., vol. 4, pp. 73–78, 1961.
17. K. Taniguchi, C. Hamaguchi, K. Kobayashi, and M. Hirayama, “Thermal oxidation of silicon in dry oxygen; The role of crystallographic orientation,” in 1987Materials Res. Soc. Fall Meeting Tech. Dig., 1987.