Computer simulations of Schottky contacts with a non-constant recombination velocity

Solid State Electronics

Volumn 32, Issue 5, 1989, Pages 363-367

  Nylander, J O ^a   Masszi, F ^a   Selberherr, S ^a   Berg, S ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION--APPLICATIONS; SEMICONDUCTOR MATERIALS--CHARGE CARRIERS;

BARRIER LOWERING; CARRIER RECOMBINATION; COMPUTER AIDED PHYSICAL SIMULATION; NON-CONSTANT RECOMBINATION VELOCITY; SCHOTTKY CONTACTS; SOFTWARE PACKAGE BAMBI;

SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER;

EID: 0024667695     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(89)90125-1     Document Type: Article

References (19)

1. A Comparison Between the Diffusion Model and the Combined Diffusion-Thermionic-Emission Model for MS-Junctions by Two-Carrier Numerical Computations
2. +) diodes
3. BAMBI -- A Design Model for Power MOSFET's
4. A revised boundary condition for the numerical analysis of Schottky barrier diodes