Frequency Response of InP/InGaAsP/InGaAs Avalanche Photodiodes

Journal of Lightwave Technology

Volumn 7, Issue 5, 1989, Pages 778-784

  Campbell, J C ^a   Johnson, B C ^a   Qua, G J ^a   Tsang, W T ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL COMMUNICATION EQUIPMENT; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DIODES, AVALANCHE--HETEROJUNCTIONS;

FRQUENCY RESPONSES; HOLE TRAPPING;

SEMICONDUCTOR DIODES, PHOTODIODE;

EID: 0024664123     PISSN: 07338724     EISSN: 15582213     Source Type: Journal    
DOI: 10.1109/50.19113     Document Type: Article

References (28)

1. S. Fujita, N. Henmi, I. Takano, M. Yamaguchi, T. Torikai, T. Suzaki, S. Takano, H. Ishihara, and M. Shikada, “A 10 Gbit/s-80 km optical fiber transmission experiment using a directly modulated DFB-LD and a high speed InGaAs APD,” in Tech. Dig. OFC’88 (New Orleans, LA), 1988.
2. A. H. Gnauck, S. K. Korotky, B. L. Kasper, J. C. Campbell, J. R. Talman, J. J. Veselka, and A. R. McCormick, “Information-band-width-limited transmission at 8 Gbit/s over 68.3 km of singlemode optical fiber,” in Tech. Dig. OFC’86 (Atlanta, GA), 1986, postdead line
3. A. H. Gnauck, J. E. Bowers, and J. C. Campbell, “8-Gbit/s transmission over 30 km of optical fiber,” Electron. Lett., vol. 22, pp. 600–602, 1986.
4. S. Fujita, I. Takano, N. Henmi, S. Shikada, I. Mito, K. Taguchi, and K. Minemura, “4-Gbit/s long span transmission experiments employing high speed DFB-LD’s and InGaAs APD’s,” in Proc. 12th Eur. Conf. Opt. Commun. (Barcelona, Spain), 1986.
5. S. K. Korotky, G. Eisenstein, A. H. Gnauck, B. L. Kasper, J. J. Velselka, R. C. Alferness, L. L. Buhl, C. A. Burrus, T. C. D. Huo, L. W. Stulz, K. Ciemiecki Nelson, L. G. Cohen, R. W. Dawson, and J. C. Campbell, “4-Gbit/s transmission experiment over 117 km of optical fiber using a Ti-LiNbO3 external modulator,” J. Lightwave Technol., vol. LT-3, pp. 1027–1031, 1985.
6. A. H. Gnauck, B. L. Kasper, R. A. Linke, R. W. Dawson, T. L. Koch, T. J. Bridges, E. G. Burkhardt, R. T. Yen, D. P. Wilt, J. C. Campbell, K. Ciemiecki Nelson, and L. G. Cohen, “4-Gbit/s transmission experiment over 103 km of optical fiber using a novel electronic multiplexer/demultiplexer,” J. Lightwave Technol., vol. LT-3, pp. 1032–1035, 1985.
7. I. Takano, I. Mito, K. Taguchi, T. Watanabe, and B. Hirosaki, “A 4-Gbit/s optical regenerative repeater for its fiber transmission experiments,” in Proc. 6th Int. Conf. Integrated Opt. and Opt. Fiber Commun. (Reno, NV), 1987.
8. M. Shikada, S. Fujita, I. Takano, N. Henmi, I. Mito, K. Taguchi, and K. Minemura, “1.5-µm high-bit-rate long-span transmission experiments employing a high-power DFB-DC-PBH laser diode,” in Proc. 5th Int. Conf. Integrated Opt. and Opt. Fiber Commun. (Venice, Italy), 1985.
9. B. L. Kasper, R. A. Linke, K. L. Walker, L. G. Cohen, T. L. Koch, T. J. Bridges, E. G. Burkhardt, R. A. Logan, R. W. Dawson, and J. C. Campbell, “A 130-km transmission experiment at 2 Gbit/s using silica-core fiber and a vapor phase transported DFB laser,” in Proc. 10th Eur. Conf. Opt. Commun. (Stuttgart, W. Germany), 1984, postdeadline pap.
10. S. R. Forrest, O. K. Kim, and R. G. Smith, “Optical response time of In0.53Ga0.47As avalanche photodiodes,” Appl. Phys. Lett., vol. 41, pp. 95–98, 1982.
11. Y. Matsushima, K. Sakai, and Y. Noda, “New type InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layer,” IEEE Electron. Dev. Lett., vol. EDL-2, pp. 179–181, 1981.
12. S. D. Personick, “Receiver design for digital fiber-optic communication systems, Part I and II,” Bell Syst. Tech. J., vol. 52, pp. 843–886, 1973.
13. S. R. Forrest, “Sensitivity of avalanche photodetector receivers for high-bit-rate long-wavelength optical communication systems,” in Semiconductors and Semimetals, vol. 22, Lightwave Communications Technology. Orlando, FL: Academic, 1985, ch. 4.
14. B. L. Kasper and J. C. Campbell, “Multigigabit-per-second avalanche photodiode lightwave receivers,” J. Lightwave Technol., vol. LT-5, pp. 1351–1364, 1987.
15. W. S. Holden, J. C. Campbell, J. F. Ferguson, A. G. Dentai, and Y. K. Jhee, “Improved frequency response of InP/InGaAsP/InGaAs avalanche Photodiodes with separate absorption, grading, and multiplication regions,” Electron. Lett., vol. 21, pp. 886–887, 1985.
16. J. C. Campbell, W. S. Holden, J. F. Ferguson, A. G. Dentai, and Y. K. Jhee, “A high-speed InP/InGaAsP/InGaAs avalanche photodiode exhibiting a gain-bandwidth product of 60 GHz,” in Proc. 5th Int. Conf Integrated Opt. and Opt. Fiber Commun. (Venice, Italy), 1985, postdeadline pap.
17. Y. Sugimoto, T. Torikai, K. Makita, H. Ishihara, and K. Taguchi, “Gain-bandwidth improvement in planar InP/InGaAsP/InGaAs avalanche photodiodes,” in Proc. 5th Int. Conf Integrated Opt. and Opt. Fiber Commun. (Venice, Italy), 1985.
18. M. Kobayashi, H. Machida, T. Shirai, Y. Kishi, N. Takagi, and T. Kaneda, “Optimized GaInAs avalanche photodiode with low noise and large gain-bandwidth product,” in Proc. 6th Int. Conf Integrated Opt. and Opt. Fiber Commun. (Reno, NV), 1987.
19. J. C. Campbell, W. T. Tsang, G. J. Qua, and J. E. Bowers, “InP/InGaAsP/InGaAs avalanche photodiodes with 70-GHz gain-bandwidth product,” Appl. Phys. Lett., vol. 51, pp. 1454–1456, 1987.
20. T. Torikai, K. Makita, S. Fujita, H. Iwasaki, and K. Kobayashi, “Small area planar InGaAs avalanche photodiode with 7.5-GHz wide bandwidth,” in Proc. Opt. Fiber Commun. ‘88 (New Orleans, LA), 1988.
21. J. C. Campbell, W. S. Holden, G. J. Qua, and A. G. Dentai, “Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions,” IEEE J. Quantum Electron., vol. QE-21, pp. 1743–1746, 1985.
22. H. W. Ruegg, “An optimized avalanche photodiode,” IEEE Trans. Electron Dev., vol. ED-14, 239–251, 1967.
23. J. E. Bowers, C. A. Burrus, and R. J. McCoy, “InGaAs p-i-n photodetectors with modulation response to millimeter wavelengths,” Electron. Lett., vol. 21, pp. 812–814, 1985.
24. J. E. Bowers, U. Koren, B. I. Miller, C. Soccolich, and W. Y. Jan, “High-speed, polyimide-based semi-insulating planar buried hetero-structures,” Electron. Lett., vol. 23, 1263–1264, 1987.
25. C. A. Burrus, J. E. Bowers, and R. S. Tucker, “Improved very-high-speed packaged InGaAs punch through photodiode,” Electron. Lett., vol. 21, pp. 262–263, 1985.
26. J. C. Campbell, S. Chandrasekhar, W. T. Tsang, G. J. Qua, and B. C. Johnson, “Multiplication noise of wide-bandgap InP/ InGaAsP/InGaAs avalanche photodiodes,” J. Lightwave Technol., to be published.
27. T. H. Windhorn, L. W. Cook, and G. E. Stillman, “Temperature dependent electron velocity-field characteristics for In0.53Ga0.47As at high electric fields,” J. Electron. Materials, vol. 11, pp. 1065–1083, 1982.
28. P. Hill, J. Schlafer, W. Powazinik, M. Urban, E. Eichen, and R. Olshansky, “Measurement of hole velocity in n-type InGaAs,” Appl. Phys. Lett., vol. 50, pp. 1260–1262, 1987.