-
1
-
-
0020830319
-
Threshold voltage of thin-film sili- con-on-insulator (SOI) MOSFET's
-
H.-K. Lim and J. G. Fossum, “Threshold voltage of thin-film sili- con-on-insulator (SOI) MOSFET's,” IEEE Trans. Electron Devices, vol. ED-30, p. 1244, 1983.
-
(1983)
IEEE Trans. Electron Devices
, vol.ED-30
, pp. 1244
-
-
Lim, H.K.1
Fossum, J.G.2
-
2
-
-
0017905148
-
Island edge effects in CMOS/SOS transistors
-
S. N. Lee, R. Kjar, and G. Kinoshita, “Island edge effects in CMOS/SOS transistors,” IEEE Trans. Electron Devices, vol. ED-25, p. 971, 1978.
-
(1978)
IEEE Trans. Electron Devices
, vol.ED-25
, pp. 971
-
-
Lee, S.N.1
Kjar, R.2
Kinoshita, G.3
-
3
-
-
0024171647
-
Self-aligned doping of mesa sidewalls for SOI transistors
-
presented at the SOS/SOI Tech. Workshop
-
M. Matloubian, B.-Y. Mao, and G. P. Pollack, “Self-aligned doping of mesa sidewalls for SOI transistors,” presented at the SOS/SOI Tech. Workshop, 1988.
-
(1988)
-
-
Matloubian, M.1
Mao, B.Y.2
Pollack, G.P.3
-
4
-
-
0020807094
-
Subthreshold currents in CMOS transistors made on oxygen-implanted silicon
-
D. J. Foster, “Subthreshold currents in CMOS transistors made on oxygen-implanted silicon,” Electron. Lett., vol. 19, p. 684, 1983.
-
(1983)
Electron. Lett.
, vol.19
, pp. 684
-
-
Foster, D.J.1
-
5
-
-
84941547053
-
SOI edge parasitics and their couplings
-
presented at the 44th Annual Device Research Conf.
-
C.-E. Chen, “SOI edge parasitics and their couplings,” presented at the 44th Annual Device Research Conf., 1986.
-
(1986)
-
-
Chen, C.E.1
-
6
-
-
0023382480
-
effect of post-oxygen-implant annealing temperature on the channel mobilities of CMOS devices in oxygen-implanted silicon- on-insulator structures
-
''The
-
B.-Y. Mao, M. Matloubian, C.-E. Chen, R. Sundaresan, and C. Slawinski, ‘'The effect of post-oxygen-implant annealing temperature on the channel mobilities of CMOS devices in oxygen-implanted silicon- on-insulator structures,” IEEE Electron Device Lett., vol. EDL-8, p. 306, 1987.
-
(1987)
IEEE Electron Device Lett.
, vol.EDL-8
, pp. 306
-
-
Mao, B.Y.1
Matloubian, M.2
Chen, C.E.3
Sundaresan, R.4
Slawinski, C.5
-
7
-
-
84941547054
-
1.25-m buried oxide SOI/CMOS process for 16K/64K SRAM's
-
presented at the 44th Annual Device Research Conf.
-
C.-E. Chen et al., “1.25-m buried oxide SOI/CMOS process for 16K/64K SRAM's,” presented at the 44th Annual Device Research Conf., 1986.
-
(1986)
-
-
Chen, C.E.1
-
8
-
-
33645606751
-
-
Hingham, MA: Kluwer
-
K. M. Cham, S.-Y. Oh, D. Chin, and J. L. Moll, Computer Aided Design and VLSI Device Development. Hingham, MA: Kluwer, 1986.
-
(1986)
Computer Aided Design and VLSI Device Development
-
-
Cham, K.M.1
Oh, S.Y.2
Chin, D.3
Moll, J.L.4
-
11
-
-
0023648442
-
CMOS circuits made in thin SIMOX films
-
J. P. Colinge and T. I. Kamins, “CMOS circuits made in thin SIMOX films,” Electron. Lett., vol. 23, p. 1162, 1987.
-
(1987)
Electron. Lett.
, vol.23
, pp. 1162
-
-
Colinge, J.P.1
Kamins, T.I.2
|