SCOPUS 정보 검색 플랫폼

Volumn 172, Issue 2, 1989, Pages

On the validity of the resistometric technique in electromigration studies of narrow stripes

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM AND ALLOYS; SEMICONDUCTING SILICON; SPUTTERING;

ELECTROMIGRATION; MEDIAN TIME TO FAILURE; RESISTOMETRIC TECHNIQUES;

SEMICONDUCTOR DEVICES, MOS;

EID: 0024662718 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/0040-6090(89)90658-5 Document Type: Letter

Times cited : (9)

References (10)

1
- 0020750359
- Temperature-ramp resistance analysis to characterize electromigration
- (1983) Solid-State Electronics , vol.26 , pp. 445
- Pasco¹ Schwarz²

4
- 84919113774
- G. Soncini, P.U. Calzolari, Elsevier, Amsterdam
- (1988) Solid State Devices , pp. 369
- Specchiulli¹ Fantini² De Santi³

6
- 85023309614
- G. Soncini, P.U. Calzolari, Elsevier, Amsterdam
- (1988) Solid State Devices , pp. 365
- Diligenti¹ Bagnoli² Neri³ Specchiulli⁴

7
- 34250782833
- IEEE, New York
- (1978) Proc. 16th Int. Rel. Phys. Symp. , pp. 233
- Black¹

8
- 84937650904
- Electromigration—A brief survey and some recent results
- (1969) IEEE Transactions on Electron Devices , vol.16 , Issue.4 , pp. 338
- Black¹

9
- 84919137505
- G. Specchiulli and F. Fantini, A simple model for stripe resistance variation in electromigration tests, unpublished.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.