Electron traps and positive DLTS signals in VPE GaAs MESFETs

Applied Physics A Solids and Surfaces

Volumn 48, Issue 5, 1989, Pages 457-463

  Ghezzi, C ^a   Gombia, E ^b   Mosca, R ^b   Pillan, M ^c  

^a UNIVERSITY OF PARMA   (Italy)

^b CNR   (Italy)

^c Telettra SpA   (Italy)

Author keywords

71.55; 85.30

Indexed keywords

CHROMIUM AND ALLOYS; SPECTROSCOPIC ANALYSIS; TRANSISTORS, FIELD EFFECT;

DLTS (DEEP LEVEL TRANSIENT SPECTROSCOPY); ELECTRON TRAPS; MESFET; VAPOR PHASE EPITAXY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0024656553     PISSN: 07217250     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/BF00619718     Document Type: Article

References (13)

1. Electrical traps in GaAs microwave f.e.t.s
2. Stability of performance and interfacial problems in GaAs MESFET's
3. Surface influence on the conductance DLTS spectra of GaAs MESFET's
4. Transient capacitance measurements on resistive samples