A General Purpose Device Simulator Coupling Poisson and Monte Carlo Transport with Applications to Deep Submicron MOSFET's

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 8, Issue 4, 1989, Pages 360-369

  Venturi, Franco ^a   Smith, R Kent ^b   Sangiorgi, Enrico C ^c   Pinto, Mark R ^b   Ricco, Bruno ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b LUCENT TECHNOLOGIES   (United States)

^c UNIVERSITY OF UDINE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS--TRANSPORT PROPERTIES; MATHEMATICAL STATISTICS--MONTE CARLO METHODS; MATHEMATICAL TECHNIQUES--VECTORS; SEMICONDUCTOR MATERIALS--CHARGE CARRIERS;

DEEP SUBMICRON NMOSFET; MONTE CARLO TRANSPORT; POISSON EQUATION;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024647039     PISSN: 02780070     EISSN: 19374151     Source Type: Journal    
DOI: 10.1109/43.29590     Document Type: Article

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