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Volumn 37, Issue 4, 1989, Pages 799-801

Frequency-Dependent Characteristics of Current Distributions on Microstrip Lines

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL TECHNIQUES--CHEBYSHEV APPROXIMATION; MATHEMATICAL TRANSFORMATIONS--FOURIER TRANSFORMS; SPECTRUM ANALYSIS;

EID: 0024646932     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.18858     Document Type: Article
Times cited : (15)

References (9)
  • 2
    • 84941438765 scopus 로고
    • Voltage breakdown of silicon as influenced by surfaceangle
    • Dec.
    • 0. M. Clark, “Voltage breakdown of silicon as influenced by surfaceangle,” J. Electrochem. Soc, vol. 107, p. 269C, Dec. 1960.
    • (1960) J. Electrochem. Soc , vol.107 , pp. 269C
    • Clark, 0.M.1
  • 4
    • 0020830319 scopus 로고
    • Threshold voltage of thin-film silicon-on-insulator (SOI) MOSFET'S
    • Oct.
    • H. K. Lim and J. G. Fossum, “Threshold voltage of thin-film silicon-on-insulator (SOI) MOSFET'S,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1244-1251, Oct. 1983.
    • (1983) IEEE Trans. Electron Devices , vol.ED-30 , pp. 1244-1251
    • Lim, H.K.1    Fossum, J.G.2
  • 5
    • 0012119120 scopus 로고
    • A theory of voltage breakdown of cylindrical p-njunctions, with applications
    • Jan.
    • H. L. Armstrong, “A theory of voltage breakdown of cylindrical p-njunctions, with applications,” IRE Trans. Electron Devices, vol. 4, pp. 15-16, Jan. 1957.
    • (1957) IRE Trans. Electron Devices , vol.4 , pp. 15-16
    • Armstrong, H.L.1
  • 7
    • 1642600315 scopus 로고
    • Silicon Integrated Circuits, Part B, suppl. 2
    • D. Kahng, Ed. New York: Academic
    • B. J. Baliga, “Silicon Integrated Circuits, Part B, suppl. 2,” in Applied Solid State Science, D. Kahng, Ed. New York: Academic, 1981.
    • (1981) Applied Solid State Science
    • Baliga, B.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.