-
1
-
-
0019712676
-
Solid state antenna switching
-
Dec.
-
P. Basile et al. “Solid state antenna switching,” RCA Rev., vol. 42, p.752. Dec. 1981.
-
(1981)
RCA Rev.
, vol.42
, pp. 752
-
-
Basile, P.1
-
2
-
-
0020141173
-
p-i-n diodes for lowfrequency high-power switching applications
-
June
-
M. Caulton, A. Rosen, P. Stabile, and A. Gombar, “p-i-n diodes for lowfrequency high-power switching applications,” IEEE Trans. Microwave Theory Tech., vol. MTT-30, p. 875, June 1982.
-
(1982)
IEEE Trans. Microwave Theory Tech.
, vol.MTT-30
, pp. 875
-
-
Caulton, M.1
Rosen, A.2
Stabile, P.3
Gombar, A.4
-
3
-
-
84938166280
-
The silicon PIN diode as a microwave radar protector atmegawatt levels
-
Feb.
-
D. Leenov, “The silicon PIN diode as a microwave radar protector atmegawatt levels,” IEEE Trans. Electron Devices, vol. ED-11, pp. 53-61, Feb. 1964.
-
(1964)
IEEE Trans. Electron Devices
, vol.ED-11
, pp. 53-61
-
-
Leenov, D.1
-
4
-
-
0023346473
-
Distortion in p-i-n diode control circuits
-
May
-
R. Caverly and G. Hiller, “Distortion in p-i-n diode control circuits,” IEEE Trans. Microwave Theory Tech., vol. MTT-35, p. 492, May 1987.
-
(1987)
IEEE Trans. Microwave Theory Tech.
, vol.MTT-35
, pp. 492
-
-
Caverly, R.1
Hiller, G.2
-
5
-
-
0022439978
-
Predict PINDiode switch distortion
-
Jan.
-
G. Hiller and R. Caverly, “Predict PINDiode switch distortion,” Microwaves and RF, vol. 25, p. 111, Jan. 1986.
-
(1986)
Microwaves and RF
, vol.25
, pp. 111
-
-
Hiller, G.1
Caverly, R.2
-
6
-
-
0024124872
-
A nonlinear p-i-n diode model for use in multi-diodemicrowave and RF communication circuit simulation
-
June
-
R. Caverly, “A nonlinear p-i-n diode model for use in multi-diodemicrowave and RF communication circuit simulation,” in Proc. 1988IEEE Int. Symp. Circuits Syst., June 1988, pp. 2295-2299.
-
(1988)
Proc. 1988IEEE Int. Symp. Circuits Syst.
, pp. 2295-2299
-
-
Caverly, R.1
-
7
-
-
84916410395
-
The small-signal inductive effect in a longPIN diode
-
J. Nordman and R. Greiner, “The small-signal inductive effect in a longPIN diode,” IEEE Trans. Electron Devices, vol. ED-10, p. 171, 1963.
-
(1963)
IEEE Trans. Electron Devices
, vol.ED-10
, pp. 171
-
-
Nordman, J.1
Greiner, R.2
-
8
-
-
84916417910
-
Total impedance of a p-i-n diode a highinjection levels
-
Oct.
-
N. Prima and Y. Tkhorik, “Total impedance of a p-i-n diode a highinjection levels,” Sov. Phys. — Semicond., vol. 1, no. 4, p. 444, Oct. 1967.
-
(1967)
Sov. Phys. — Semicond.
, vol.1
, Issue.4
, pp. 444
-
-
Prima, N.1
Tkhorik, Y.2
-
9
-
-
0016082007
-
Some properties concerning the a.c. impedance of P-I-N and P-N-N+ diodes
-
R. Varshney, D. Roulston, and S. Chamberlain, “Some properties concerning the a.c. impedance of P-I-N and P-N-N+ diodes,” Sotid-StateElectron., vol. 17, p. 699, 1974.
-
(1974)
Sotid-StateElectron.
, vol.17
, pp. 699
-
-
Varshney, R.1
Roulston, D.2
Chamberlain, S.3
-
11
-
-
0023171904
-
Microwave resistance of gallium arsenide andsilicon p-i-n diodes
-
R. Caverly and G. Hiller, “Microwave resistance of gallium arsenide andsilicon p-i-n diodes,” in 1987 IEEE MTT-S Int. Microwave Symp. Dig., p. 591.
-
(1987)
IEEE MTT-S Int. Microwave Symp. Dig.
, pp. 591
-
-
Caverly, R.1
Hiller, G.2
-
12
-
-
0020878584
-
New GaAs PIN diodes with lower dissipation loss, faster switching speed at lower drive power
-
C. Barratt et al. “New GaAs PIN diodes with lower dissipation loss, faster switching speed at lower drive power,” in 1983 IEEE MTT-S Int.Microwave Symp. Dig., p. 507.
-
(1983)
IEEE MTT-S Int.Microwave Symp. Dig.
, pp. 507
-
-
Barratt, C.1
-
15
-
-
0019668389
-
Volterra series representation of a forward biased p-i-ndiode
-
Dec.
-
W. Reiss, “Volterra series representation of a forward biased p-i-ndiode,” IEEE Trans. Electron Devices, vol. ED-28, p. 1495, Dec. 1981.
-
(1981)
IEEE Trans. Electron Devices
, vol.ED-28
, pp. 1495
-
-
Reiss, W.1
|