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Volumn 37, Issue 4, 1989, Pages 787-790

Short Papers: The Frequency-Dependent Impedance of p-i-n Diodes

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS--IMPEDANCE; MATHEMATICAL TECHNIQUES--INTEGRAL EQUATIONS;

EID: 0024646307     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.18854     Document Type: Article
Times cited : (28)

References (15)
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  • 2
  • 3
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    • The silicon PIN diode as a microwave radar protector atmegawatt levels
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    • D. Leenov, “The silicon PIN diode as a microwave radar protector atmegawatt levels,” IEEE Trans. Electron Devices, vol. ED-11, pp. 53-61, Feb. 1964.
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    • Leenov, D.1
  • 4
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    • Distortion in p-i-n diode control circuits
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    • R. Caverly and G. Hiller, “Distortion in p-i-n diode control circuits,” IEEE Trans. Microwave Theory Tech., vol. MTT-35, p. 492, May 1987.
    • (1987) IEEE Trans. Microwave Theory Tech. , vol.MTT-35 , pp. 492
    • Caverly, R.1    Hiller, G.2
  • 5
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    • Predict PINDiode switch distortion
    • Jan.
    • G. Hiller and R. Caverly, “Predict PINDiode switch distortion,” Microwaves and RF, vol. 25, p. 111, Jan. 1986.
    • (1986) Microwaves and RF , vol.25 , pp. 111
    • Hiller, G.1    Caverly, R.2
  • 6
    • 0024124872 scopus 로고
    • A nonlinear p-i-n diode model for use in multi-diodemicrowave and RF communication circuit simulation
    • June
    • R. Caverly, “A nonlinear p-i-n diode model for use in multi-diodemicrowave and RF communication circuit simulation,” in Proc. 1988IEEE Int. Symp. Circuits Syst., June 1988, pp. 2295-2299.
    • (1988) Proc. 1988IEEE Int. Symp. Circuits Syst. , pp. 2295-2299
    • Caverly, R.1
  • 7
    • 84916410395 scopus 로고
    • The small-signal inductive effect in a longPIN diode
    • J. Nordman and R. Greiner, “The small-signal inductive effect in a longPIN diode,” IEEE Trans. Electron Devices, vol. ED-10, p. 171, 1963.
    • (1963) IEEE Trans. Electron Devices , vol.ED-10 , pp. 171
    • Nordman, J.1    Greiner, R.2
  • 8
    • 84916417910 scopus 로고
    • Total impedance of a p-i-n diode a highinjection levels
    • Oct.
    • N. Prima and Y. Tkhorik, “Total impedance of a p-i-n diode a highinjection levels,” Sov. Phys. — Semicond., vol. 1, no. 4, p. 444, Oct. 1967.
    • (1967) Sov. Phys. — Semicond. , vol.1 , Issue.4 , pp. 444
    • Prima, N.1    Tkhorik, Y.2
  • 9
    • 0016082007 scopus 로고
    • Some properties concerning the a.c. impedance of P-I-N and P-N-N+ diodes
    • R. Varshney, D. Roulston, and S. Chamberlain, “Some properties concerning the a.c. impedance of P-I-N and P-N-N+ diodes,” Sotid-StateElectron., vol. 17, p. 699, 1974.
    • (1974) Sotid-StateElectron. , vol.17 , pp. 699
    • Varshney, R.1    Roulston, D.2    Chamberlain, S.3
  • 11
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    • Microwave resistance of gallium arsenide andsilicon p-i-n diodes
    • R. Caverly and G. Hiller, “Microwave resistance of gallium arsenide andsilicon p-i-n diodes,” in 1987 IEEE MTT-S Int. Microwave Symp. Dig., p. 591.
    • (1987) IEEE MTT-S Int. Microwave Symp. Dig. , pp. 591
    • Caverly, R.1    Hiller, G.2
  • 12
    • 0020878584 scopus 로고
    • New GaAs PIN diodes with lower dissipation loss, faster switching speed at lower drive power
    • C. Barratt et al. “New GaAs PIN diodes with lower dissipation loss, faster switching speed at lower drive power,” in 1983 IEEE MTT-S Int.Microwave Symp. Dig., p. 507.
    • (1983) IEEE MTT-S Int.Microwave Symp. Dig. , pp. 507
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    • Volterra series representation of a forward biased p-i-ndiode
    • Dec.
    • W. Reiss, “Volterra series representation of a forward biased p-i-ndiode,” IEEE Trans. Electron Devices, vol. ED-28, p. 1495, Dec. 1981.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.