Soft fails in microelectronic circuits due to proton-induced nuclear reactions in material surrounding the SEU-sensitive volume

Nuclear Inst. and Methods in Physics Research, B

Volumn 40-41, Issue PART 2, 1989, Pages 1300-1305

  El Teleaty, S ^a   McNulty, P J ^a   Abdel Kader, W G ^a   Beauvais, W J ^a  

^a CLARKSON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FAILURE ANALYSIS; PROTONS;

PROTON INDUCED NUCLEAR REACTIONS; SINGLE EVENT UPSETS (SEUS); SOFTWARE PACKAGE CUPID;

MICROELECTRONICS;

EID: 0024645688     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(89)90644-7     Document Type: Article

References (8)

1. Microdosimetric Aspects of Proton-Induced Nuclear Reactions in Thin Layers of Silicon
2. Charge-Deposition Spectra in Thin Slabs of Silicon Induced by Energetic Protons
3. Microdosimetric Analysis of Proton Induced Reactions in Silicon and Gallium Arsenide
4. Charge Funneling in N- and P-Type Si Substrates
5. Modeling diffusion and collection of charge from ionizing radiation in silicon devices
6. Monte Carlo modeling of the transport of ionizing radiation created carriers in integrated circuits
7. Methods for Calculating SEU Rates for Bipolar and NMOS Circuits