Bonding electron distribution of gap, GaAs and GaSb

Japanese Journal of Applied Physics

Volumn 28, Issue 4 R, 1989, Pages 573-576

  Uno, Ryosei ^a   Ishigaki, Jun ^a   Ozawa, Haruo ^a   Yukino, Ken ^b  

^a NIHON UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Bonding electron distribution; Covalent electron; Deformation map; Effective charge; III V semiconductor; Ionicity; X ray powder diffraction

Indexed keywords

ELECTRONS; SEMICONDUCTING GALLIUM ARSENIDE; X-RAYS--DIFFRACTION;

BONDING ELECTRON DISTRIBUTION; DIFFERENCE FOURIER SYNTHESIS; EFFECTIVE CHARGE; GALLIUM ANTIMONIDE; GALLIUM PHOSPHIDE; X-RAY POWDER DIFFRACTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0024645680     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.28.573     Document Type: Article

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