Photoluminescence in VAD SiO2:GeO2 glasses sintered under reducing or oxidizing conditions

Japanese Journal of Applied Physics

Volumn 28, Issue 4 R, 1989, Pages 622-631

  Kohketsu, Masami ^a   Awazu, Koichi ^a   Kawazoe, Hiroshi ^a   Yamane, Masayuki ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Defect, divalent ge; Electron spin resonance; Ge cluster; GeO molecule; High temperature crystal structure; Photoluminescence; Preparation atomosphere; Temperature dependence of PL; Vacuum ultraviolet absorption; VAD SiO2:GeO2glass

Indexed keywords

GERMANIUM COMPOUNDS; OPTICAL FIBERS--FABRICATION; PHOTOLUMINESCENCE; SILICA;

GERMANIUM OXIDE; SINTERED GLASS; VAPOR AXIAL DEPOSITION;

GLASS;

EID: 0024645398     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.28.622     Document Type: Article

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