Hydrogenated amorphous silicon films deposited by reactive sputtering: The electronic properties, hydrogen bonding and microstructure

Thin Solid Films

Volumn 171, Issue 1, 1989, Pages 217-233

  Pinarbasi, M ^a   Maley, N ^a   Myers, A ^a   Abelson, J R ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; OPTICAL PROPERTIES; SEMICONDUCTING FILMS--MICROSTRUCTURE; SOLAR CELLS; SPUTTERING;

HYDROGEN BONDING; REACTIVE SPUTTERING;

SEMICONDUCTING SILICON;

EID: 0024640018     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(89)90045-X     Document Type: Article

References (36)

1. The Physics of Hydrogenated Amorphous Silicon I
2. Amorphous Metals and Semiconductors
3. Neutral radical deposition from silane discharges
4. Hydrogen in amorphous semiconductors
5. The hydrogen content of a-Ge:H and a-Si:H as determined by ir spectroscopy, gas evolution and nuclear reaction techniques
6. The Physics of Hydrogenated Amorphous Silicon II
7. Characterization of reactively magnetron sputtered hydrogenated amorphous silicon films
8. Preparation of low defect grade a-Si:H films by RF magnetron sputtering technique
9. The role of hydrogen in a-Si:H — results of evolution and annealing studies
10. Comparative study of hydrogen evolution from amorphous hydrogenated silicon films
11. The relation between microstructure and hydrogen content and evolution for hydrogenated amorphous silicon films prepared by magnetron sputtering
12. Infrared absorption and thermal evolution study of hydrogen bonding in a-SiH