SCOPUS 정보 검색 플랫폼

Volumn 32, Issue 3, 1989, Pages 247-251

Numerical and experimental comparison of 60 V vertical double-diffused MOSFETs and MOSFETs with a trench-gate structure

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL TECHNIQUES--NUMERICAL ANALYSIS; SEMICONDUCTOR MATERIALS--DOPING;

DMOSFET; DRIFT REGION DOPING; TRENCH-GATE STRUCTURE MOSFETS; UMOSFET; VERTICAL DOUBLE-DIFFUSED MOSFETS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024629947 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(89)90099-3 Document Type: Article

Times cited : (7)

References (10)

1
- 0018985506
- (1980) IEEE Trans. Electron Devices , vol.27 ED , pp. 395
- Yoshida¹

2
- 0018986051
- A high-performance planar power MOSFET
- (1980) IEEE Transactions on Electron Devices , vol.27 ED , pp. 340
- Cohen¹ Tsand² Lisiak³

3
- 0018985713
- (1980) IEEE Trans. Electron Devices , vol.27 ED , pp. 356
- Sun¹ Plummer²

4
- 0021787429
- A new vertical power MOSFET structure with extremely reduced on-resistance
- (1985) IEEE Transactions on Electron Devices , vol.32 ED , pp. 2
- Ueda¹ Takagi² Kano³

6
- 0023330527
- An ultra-low on-resistance power MOSFET fabricated by using a fully self-aligned process
- (1987) IEEE Transactions on Electron Devices , vol.34 ED , pp. 926
- Ueda¹ Takagi² Kano³

8
- 0000393662
- Junction termination extension for near-ideal breakdown voltage in p-n junctions
- (1986) IEEE Transactions on Electron Devices , vol.33 ED , pp. 1601
- Temple¹ Tantraporn²

9
- 0020299674
- (1982) Solid-St. Electron. , vol.25 , pp. 1179
- Adler¹ Temple² Rustay³

10
- 0018986104
- (1980) IEEE Trans. Electron Devices , vol.27 ED , pp. 343
- Temple¹ Love² Gray³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.