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Volumn 25, Issue 2, 1989, Pages 1123-1126

A new self-aligning process for whole-wafer tunnel junction fabrlcation

Author keywords

[No Author keywords available]

Indexed keywords

LITHOGRAPHY; SEMICONDUCTOR DEVICES--TUNNELING;

EID: 0024628366     PISSN: 00189464     EISSN: 19410069     Source Type: Journal    
DOI: 10.1109/20.92487     Document Type: Article
Times cited : (16)

References (9)
  • 1
    • 0000511869 scopus 로고
    • Selective Nb Anodisation Process for Fabricating Josephson Tunnel Junctions
    • H. Kroger, L. N. Smith, D. W. Jillie, “Selective Nb Anodisation Process for Fabricating Josephson Tunnel Junctions,” Appl. Phys. Lett., 39, p. 280, 1981.
    • (1981) Appl. Phys. Lett. , vol.39 , pp. 280
    • Kroger, H.1    Smith, L.N.2    Jillie, D.W.3
  • 2
    • 36749108668 scopus 로고
    • High Quality Refractory Josephson Tunnel Junctions Utilizing Thin Al Layers
    • M. Gurvitch, M. A. Washington, and H. A. Huggins, “High Quality Refractory Josephson Tunnel Junctions Utilizing Thin Al Layers,” Appl. Phys. Lett., 45, p. 472, 1983.
    • (1983) Appl. Phys. Lett. , vol.45 , pp. 472
    • Gurvitch, M.1    Washington, M.A.2    Huggins, H.A.3
  • 3
    • 0010443339 scopus 로고
    • Preparation and characteristics of Nb/Al-oxide-Nb Tunnel Junctions
    • H. A. Huggins and M. Gurvitch, “Preparation and characteristics of Nb/Al-oxide-Nb Tunnel Junctions,” J. Appl. Phys. 57, p2103, 1985.
    • (1985) J. Appl. Phys. , vol.57 , pp. 2103
    • Huggins, H.A.1    Gurvitch, M.2
  • 5
    • 0022594907 scopus 로고
    • Self-Aligned Contact Process for Nb/Al-AlOx/Nb Josephson Junctions
    • S. Morohashi, S. Hasuo and T. Yamaoka, “Self-Aligned Contact Process for Nb/Al-AlOx/Nb Josephson Junctions”, Appl. phys. Lett., 48, p254, 1986
    • (1986) Appl. hys. Lett. , vol.48 , pp. 254
    • Morohashi, S.1    Hasuo, S.2    Yamaoka, T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.