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Volumn 36, Issue 3, 1989, Pages 522-528

Short-Channel Effects In Soi Mosfet's

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, VLSI; SEMICONDUCTING SILICON--THIN FILMS;

EID: 0024627953     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.19963     Document Type: Article
Times cited : (212)

References (14)
  • 1
    • 0024106969 scopus 로고
    • A physical short-channel model for the thin-film SOI MOSFET applicable to device and circuit CAD
    • Nov.
    • S. Veeraraghavan and J.G. Fossum, “A physical short-channel model for the thin-film SOI MOSFET applicable to device and circuit CAD,” IEEE Trans. Electron Devices, vol. ED-35, pp. 1866–1875, Nov. 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 ED , pp. 1866-1875
    • Veeraraghavan, S.1    Fossum, J.G.2
  • 2
    • 0020151660 scopus 로고
    • Threshold voltage models of short, narrow and small geometry MOSFET's: A review
    • L.A. Akers and J.J. Sanchez, “Threshold voltage models of short, narrow and small geometry MOSFET's: A review,” Solid-State Electron., vol. 25, no. 7, pp. 621–641, 1982.
    • (1982) Solid-State Electron. , vol.25 , Issue.7 , pp. 621-641
    • Akers, L.A.1    Sanchez, J.J.2
  • 3
    • 6344290643 scopus 로고
    • Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate
    • T. Sekigawa and Y. Hayashi, “Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate,” Solid-State Electron., vol. 27, pp. 827–828, 1984.
    • (1984) Solid-State Electron. , vol.27 , pp. 827-828
    • Sekigawa, T.1    Hayashi, Y.2
  • 4
    • 0023648442 scopus 로고
    • CMOS circuits made in thin SIMOX films
    • Oct.
    • J.-P. Colinge and T.I. Kamins, “CMOS circuits made in thin SIMOX films,” Electron. Lett., vol. 23, pp. 1162–1164, Oct. 1987.
    • (1987) Electron. Lett. , vol.23 , pp. 1162-1164
    • Colinge, J.P.1    Kamins, T.I.2
  • 5
    • 0021405436 scopus 로고
    • Current-voltage characteristics of thin-film SOI MOSFET's in strong inversion
    • Apr.
    • H.K. LimandJ.G. Fossum, “Current-voltage characteristics of thin-film SOI MOSFET's in strong inversion,” IEEE Trans. Electron Devices, vol. ED-31, pp. 401–408, Apr. 1984.
    • (1984) IEEE Trans. Electron Devices , vol.31 ED , pp. 401-408
    • Lim, H.K.1    Fossum, J.G.2
  • 9
    • 0016619927 scopus 로고
    • Modeling weak avalanche multiplication currents in IGFET's and SOS transistors for CAD
    • Y.A. El-Mansy and D.M. Caughey, “Modeling weak avalanche multiplication currents in IGFET's and SOS transistors for CAD,” in lEDM Tech. Dig., 1975.
    • (1975) lEDM Tech. Dig.
    • El-Mansy, Y.A.1    Caughey, D.M.2
  • 10
    • 0017466066 scopus 로고
    • A simple twodimensional model for IGFET operation in the saturation region
    • Mar.
    • Y.A. El-Mansy and A.R. Boothroyd, “A simple twodimensional model for IGFET operation in the saturation region,” IEEE Trans. Electron Devices, vol. ED-24, pp. 254–262, Mar. 1977.
    • (1977) IEEE Trans. Electron Devices , vol.24 ED , pp. 254-262
    • El-Mansy, Y.A.1    Boothroyd, A.R.2
  • 11
    • 84945713471 scopus 로고
    • Hot-electron-induced MOSFET degradation-model, monitor, and improvement
    • Feb.
    • C. Hu, S. Tarn, F.C. Hsu, P.K. Ko, T.Y. Chan, and K.W. Terrill, “Hot-electron-induced MOSFET degradation-model, monitor, and improvement,” IEEE Trans. Electron Devices, vol. ED-32, pp. 375–385, Feb. 1985.
    • (1985) IEEE Trans. Electron Devices , vol.32 ED , pp. 375-385
    • Hu, C.1    Tarn, S.2    Hsu, F.C.3    Ko, P.K.4    Chan, T.Y.5    Terrill, K.W.6
  • 12
    • 0023438606 scopus 로고
    • Hot-electron effects in silicon-on-insulator n-channel MOSFET's
    • Oct.
    • J.-P. Colinge, “Hot-electron effects in silicon-on-insulator n-channel MOSFET's” IEEE Trans. Electron Devices, vol. ED-34, pp. 2173–2177, Oct. 1987.
    • (1987) IEEE Trans. Electron Devices , vol.34 ED , pp. 2173-2177
    • Colinge, J.P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.