Organo-metallic chemical vapour deposition of silicon-rich amorphous SixC1-x refractory layers using SiEt4 as a single source

Materials Science and Engineering A

Volumn 109, Issue C, 1989, Pages 69-75

  Maury, F ^a   Mestari, A ^a   Morancho, R ^a  

^a UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CERAMIC PRODUCTS--COATINGS; COATINGS--CERAMICS; ORGANOMETALLICS--DECOMPOSITION; REFRACTORY MATERIALS;

ALKYL SILANES; AMORPHOUS COATINGS; CERAMIC MATRIX COMPOSITES; LOW-PRESSURE CHEMICAL VAPOR DEPOSITION; MICROHARDNESS; TETRAETHYL SILANE;

SILICON CARBIDE;

EID: 0024626360     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5093(89)90566-2     Document Type: Article

References (17)

1. The growth of hetero-epitaxial SiC films by pyrolysis of various alkyl-silicon compounds
2. Low-pressure chemical vapor deposition for very large-scale integration processing—A review