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Volumn 24, Issue 1, 1989, Pages 118-127

A Framework to Evaluate Technology and Device Design Enhancements for MOS Integrated Circuits

Author keywords

[No Author keywords available]

Indexed keywords

LOGIC DESIGN; NOISE, SPURIOUS SIGNAL; SEMICONDUCTOR DEVICES, MOS;

EID: 0024612395     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.16311     Document Type: Article
Times cited : (12)

References (13)
  • 1
    • 0016116644 scopus 로고
    • Design of ion-implanted MOSFET's with very small physical dimensions
    • Oct.
    • R. H. Dennard et al., “Design of ion-implanted MOSFET's with very small physical dimensions,” IEEE J. Solid-State Circuits, vol. SC-9, p. 256, Oct. 1974.
    • (1974) IEEE J. Solid-State Circuits , vol.SC-9 , pp. 256
    • Dennard, R.H.1
  • 3
    • 84941431185 scopus 로고    scopus 로고
    • private communication
    • M. Nagata, private communication.
    • Nagata, M.1
  • 4
    • 0023561542 scopus 로고
    • Age of versatility: Pervasive ASIC technology
    • presented at the 1987 Symp. VLSI Circuits, Karuizawa, Japan, May
    • H. Sasaki, “Age of versatility: Pervasive ASIC technology,” presented at the 1987 Symp. VLSI Circuits, Karuizawa, Japan, May 1987.
    • (1987)
    • Sasaki, H.1
  • 5
    • 0021501347 scopus 로고
    • The effect of high fields on MOS device and circuit performance
    • Oct.
    • C. G. Sodini, P. K. Ko, and J. L. Moll, “The effect of high fields on MOS device and circuit performance,” IEEE Trans. Electron Devices, vol. ED-31, p. 1386, Oct. 1984.
    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , pp. 1386
    • Sodini, C.G.1    Ko, P.K.2    Moll, J.L.3
  • 6
    • 0020186076 scopus 로고
    • Charge accumulation and mobility in thin dielectric MOS transistors
    • Sept.
    • C. G. Sodini, T. W. Ekstedt, and J. L. Moll, “Charge accumulation and mobility in thin dielectric MOS transistors,” Solid-State Electron., vol. 25, p. 833, Sept. 1982.
    • (1982) Solid-State Electron. , vol.25 , pp. 833
    • Sodini, C.G.1    Ekstedt, T.W.2    Moll, J.L.3
  • 7
    • 0020207780 scopus 로고
    • Moderate inversion in MOS devices
    • Nov.
    • Y. Tsividis, “Moderate inversion in MOS devices,” Solid-State Electron., vol. 25, pp. 1099-1982, Nov. 1982.
    • (1982) Solid-State Electron. , vol.25 , pp. 1099-1982
    • Tsividis, Y.1
  • 8
    • 84941478064 scopus 로고
    • Analog MOS device characterization and modelling
    • presented at the Solid State Technology Committee Workshop on Mixed Signal Circuits, Princeton, NJ, Aug.
    • P. K. Ko, “Analog MOS device characterization and modelling,” presented at the Solid State Technology Committee Workshop on Mixed Signal Circuits, Princeton, NJ, Aug. 1986.
    • (1986)
    • Ko, P.K.1
  • 9
    • 49949124297 scopus 로고
    • Low frequency noise in MOS transistors- I Theory
    • S. Cristensson et al., “Low frequency noise in MOS transistors- I Theory,” Solid-State Electron., vol. 11, p. 797, 1968.
    • (1968) Solid-State Electron. , vol.11 , pp. 797
    • Cristensson, S.1
  • 10
    • 84945714736 scopus 로고
    • Development of the selfaligned titanium silicide process for VLSI applications
    • M. E. Alperin et al., “Development of the selfaligned titanium silicide process for VLSI applications,” IEEE Trans. Electron Devices, vol. ED-32, p. 141, 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 141
    • Alperin, M.E.1
  • 11
    • 0023315689 scopus 로고
    • HPSAC-A silicided amorphous silicon contact and interconnect technology for VLSI
    • S. S. Wong et al., “HPSAC-A silicided amorphous silicon contact and interconnect technology for VLSI,” IEEE Tram. Electron Devices, vol. ED-34, p. 587, 1987.
    • (1987) IEEE Tram. Electron Devices , vol.ED-34 , pp. 587
    • Wong, S.S.1
  • 12
    • 0023315562 scopus 로고
    • Titanium nitride local interconnect technology for VLSI
    • T. E. Tang et al., “Titanium nitride local interconnect technology for VLSI,” IEEE Trans. Electron Devices, vol. ED-34, p. 682, 1987.
    • (1987) IEEE Trans. Electron Devices , vol.ED-34 , pp. 682
    • Tang, T.E.1
  • 13
    • 84939738968 scopus 로고
    • Two 13-ns CMOS SRAM's with very low active power and improved asynchronous circuit techniques
    • S. T. Flannagan et at., “Two 13-ns CMOS SRAM's with very low active power and improved asynchronous circuit techniques,” IEEE J. Solid-State Circuits, vol. SC-21, p. 692, 1986.
    • (1986) IEEE J. Solid-State Circuits , vol.SC-21 , pp. 692
    • Flannagan, S.T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.