Short-Pulse and High-Frequency Signal Generation in Semiconductor Lasers

Journal of Lightwave Technology

Volumn 7, Issue 2, 1989, Pages 400-419

  Lau, Kam Y ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LASER PULSES; MICROWAVE GENERATION; OPTICAL COMMUNICATION EQUIPMENT; OPTOELECTRONIC DEVICES;

ACTIVE MODE LOCKING; GAIN/Q-SWITCHING; MICROWAVE SIGNAL GENERATION; PASSIVE MODE LOCKING; SHORT PULSE GENERATION;

LASERS, SEMICONDUCTOR;

EID: 0024612318     PISSN: 07338724     EISSN: 15582213     Source Type: Journal    
DOI: 10.1109/50.17787     Document Type: Article

References (96)

1. K. Y. Lau and A. Yariv, “Ultrahigh-speed semiconductor lasers,” IEEE J. Quantum Electron., vol. QE-21, pp. 121-138, 1985.
2. J. E. Bowers, B. R. Hemmenway, A. H. Gnauck, and D. P. Wilt, “High-speed InGaAsP constricted mesa lasers,” IEEE J. Quantum Electron., vol. QE-22, pp. 833-844, 1986.
3. R. Olshansky, W. Powazinik, P. Hill, V. Lanzisera, and R. N. Lauer, “InGaAsP buried heterostructure laser with 22-GHz bandwidth modulation efficiency,” Electron. Lett., vol. 23, p. 839, 1987.
4. R. Olshansky, V. Lanzisera, C. B. Su, W. Powazinik, and R. B. Lauer, “Frequency response of an IrGaAsP vapor phase regrown buried heterostructure laser with 18-GHz bandwidth,” Appl. Phys. Lett., vol. 49, pp. 128-130, 1986.
5. J. E. Bowers, “Microwave signal transmission with InGaAsP lasers,” presented at the Opt. Fiber Commun. Conf., Reno, NV, Jan. 1987, pap. WK1.
6. R. S. Tucker, “High-speed modulation of semiconductor lasers,” J. Lightwave Technol., vol. LT-3, pp. 1180-1192, 1985.
7. R. A. Linke, “Direct gigabit modulation of injection lasers-structure dependent speed limitations,” J. Lightwave Technol., vol. LT-2, pp. 40-43, 1984.
8. R. S. Tucker and I. P. Kaminow, “High frequency characteristics of directly modulated InGaAsP ridge waveguide and buried heterostructure lasers,” J. Lightwave Technol., vol. LT-2, pp. 385-393, 1984.
9. G. Eisenstein, U. Koren, R. S. Tucker. B. L. Kasper, A. H. Gnauck, and P. K. Tien, “High-speed analog and digital modulation of 1.51- µm wavelength, three-channel buried crescent InGaAsP lasers,” Appl. Phys. Lett., vol. 45, pp. 311-313, 1984.
10. J. E. Bowers, W. T. Tsang, T. L. Koch, N. A. Olsson, and R. A. Logan, “Microwave intensity and frequency modulation of heteroepitaxial ridge-overgrown distributed feedback lasers,” Appl. Phys. Lett., vol. 46, pp. 233-235, 1985.
11. J. E. Bowers, T. L. Koch, B. R. Hemenway, D. P. Wilt, T. J. Bridges, and E. G. Burkhardt, “High frequency modulation of 1.52-µm vapor phase transported InGaAsP lasers,” Electron. Lett., vol. 21, pp. 297-299, 1985.
12. U. Koren, G. Eisenstein, J. E. Bowers, A. H. Gnauck, and P. K. Tien, “Wide-bandwidth modulation of three-channel buried crescent laser diodes,” Electron. Lett., vol. 21, pp. 500-501, 1985.
13. C. B. Su and V. Lanzisera, “Effect of doping level on the gain constant and modulation bandwidth of InGaAsP semiconductor lasers,” Appl. Phys. Lett., vol. 45, pp. 1302-1304, 1984; also C. B. Su, V. Lanzisera, E. Meland, R. Olshansky, W. Powazinik and R. B. Lauer, “12.5-GHz direct modulation bandwidth vapor phase regrown 1.3-µm lasers,” Appl. Phys. Lett., vol. 46, pp. 344-346, 1985.
14. C. B. Su, V. Lanzisera, R. Olshansky, W. Powazinik, E. Meland, J. Schlafer, and R. B. Lauer, “15-GHz direct modulation bandwidth of vapor-phase regrown 1.3-/µm InGaAsP buried heterostructure lasers under CW operation at room temperature,” Electron. Lett., vol. 21, pp. 577-578, 1985); also C. B. Su and V. Lanzisera, “Ultrahigh speed modulation of 1.3-µm InGaAsP diode lasers,” IEEE J. Quantum Electron., vol. QE-22, pp. 1568-1578, 1986.
15. J. E. Bowers, B. R. Hemenway, A. H. Guack, T. J. Bridges, E. G. Burkhardt, D. P. Wilt, and S. Maynard, “High frequency constricted mesa lasers,” Appl. Phys. Lett., vol. 47, pp. 78-80, 1985.
16. J. E. Bowers, B. R. Hemenway, T. J. Bridges, and E. G. Burkhardt, “26.5-GHz bandwidth InGaAsP lasers with tight optical confinement,” Electron. Lett., vol. 21, pp. 1090-1091, 1985.
17. J. E. Bowers, “Millimeter wave response of InGaAsP lasers,” Electron. Lett., vol. 21, pp. 1195-1197, 1985.
18. R. Olshansky, V. Lanzisera, C. B. Su, W. Powazinik, and R. B. Lauer, “Frequency response of an InGaAsP vapor phase regrown buried heterostructure laser with 18-GHz bandwidth,” Appl. Phys. Lett., vol. 49, pp. 128-130, 1986.
19. C. E. Zah, J. S. Osinski, S. G. Menocal, N. Tabatabaie, A. G. Dentai, and C. A. Burrus, “Wide-bandwidth and high-power 1.3-µm InGaAsP buried crescent lasers with setmiinsulating Fe-doped InP current blocking layers,” Electron. Lett., vol. 23, pp. 52-53, 1987.
20. B. Moslehi, J. W. Goodman, M. Tur, and H. J. Shaw, “Fiber optics lattice signal processing,” Proc. IEEE, pp. 909-930, July 1984.
21. H. F. Taylor, “Radar and EW applications of multigigahertz optical components and systems,” presented at the Topical Meeting Picosecond Electron, and Optoelectron. Lake Tahoe, NV, Jan. 1987, pap. FB-1.
22. W. I. Way, “Fiber-optic transmission of microwave 8-phase PSK and 16 ary quadrature amplitude modulated signals at 1.3-µm wavelength region,” J. Lightwave Technol., to be published.
23. W. 1. Way, M. Krain, and R. S. Wolff, “A 35-km satellite earth station 1.3-µm fiber-optic microwave multicarrier transmission system,” presented at the Opt. Fiber Commun. Conf., Reno, NV, Jan. 1987, pap. PDP-18.
24. J. Manning, R. Olshansky, D. M. Fye, and W. Powazinik, “Strong influence of nonlinear gain on spectral and dynamic characteristics of InGaAsP lasers,” Electron. Lett., vol. 21, pp. 496-497, 1985.
25. D. J. Channin, “Effect of gain saturation on injection laser switching,” J. Appl. Phys., vol. 50, p. 3858, 1979.
26. M. Yamada, “Transverse and longitudinal mode control in semiconductor injection lasers,” IEEE J. Quantum Electron., vol. QE-19, pp. 1365-1373, 1983.
27. C. B. Su, V. Lanzisera, and R. Olshansky, “Measurement of nonlinear gain from FM modulation index of InGaAsP lasers,” Electron. Lett., vol. 21, pp. 893-894. 1985.
28. R. Olshansky, P. Hill, V. Lanzisera, and Q. Powazinik, “Universal relationship between resonant frequency and damping rate of 1.3-µm InGaAsP semiconductor lasers,” Appl. Phys. Lett., vol. 50, pp. 653-655, 1987.
29. Y. Arawaka, K. Vahala, and A. Yariv, “Quantum noise and dynamics in quantum well and quantum wire lasers,” Appl. Phys. Lett., vol. 45, pp. 950-952, 1984.
30. K. Uomi, N. Chinone, T. Ohtoshi, and T. Kajimura, “High relaxation oscillation frequency (> 10 GHz) of GaAlAs multiquantum well lasers,” Japan. J. Appl. Phys., vol. 24, p. L539, 1985.
31. A. Arakawa, K. Vahala, A. Yariv, and K. Y. Lau, “Enhanced modulation bandwidth of GaAlAs double heterostructure laser in high magnetic fields: Dynamic response with quantum wire effects,” Appl. Phys. Lett., vol. 47, pp. 1142-1144, 1985.
32. K. Uomi, T. Mishima, and N. Chinone, “Ultrahigh relaxation oscillation frequency (up to 30 GHz) of highly p-doped GaAlAs multiquantum well lasers,” Appl. Phys. Lett., vol. 51, pp. 78-80, 1985.
33. K. Y. Lau and A. Yariv, “Intermodulation distortion in a directly modulated semiconductor injection laser,” Appl. Phys. Lett., vol. 45, pp. 1034-1036, 1984.
34. T. E. Darcie, R. S. Tucker, and G. J. Sullivan, “Intermodulation and harmonic distortion in InGaAsP lasers,” Electron. Lett., vol. 21, pp. 665-666, 1985.
35. W. I. Way, “Large signal nonlinear distortion prediction for a singlemode laser diode under microwave intensity modulation,” IEEE Trans. Microwave Theory Tech., vol. MTT-35, pp. 121-138, 1987.
36. A. E. Siegman, Lasers. Mill Valley, CA: University Science Books, 1986.
37. J. P. Van der Ziel, “Mode locking of semiconductor lasers,” in Semiconductor and Semimetals, vol. 22, part B. New York: Academic, 1985, ch. 1.
38. P. T. Ho, L. A. Glasser, E. P. Ippen, and H. A. Haus, “Picosecond pulse generation with a CW GaAlAs laser diode,” Appl. Phys. Lett., vol. 33, pp. 241-243, 1978.
39. L. A. Glasser, “CW mode locking of a GaInAsP laser diode,” Electron. Lett., vol. 14, pp. 725-726, 1978.
40. M. B. Holbrook, W. E. Sleat, and D. J. Bradley, “Bandwidth limited picosecond pulse generation in an actively mode-locked GaAlAs diode laser,” Appl. Phys. Lett., vol. 37, pp. 59-62, 1980.
41. D. J. Bradley, M. B. Holbrook, and W. E. Sleat, “Bandwidth limited picosecond pulses from an actively mode-locked GaAlAs diode laser,” IEEE J. Quantum Electron., vol. QE-17, pp. 658-662, 1981.
42. J. AuYeung, “Picosecond pulse generation from a synchronously pumped mode-locked semiconductor laser diode,” Appl. Phys. Lett., vol. 40, pp. 112-114, 1982.
43. J. Auyeung, L. A. Bergman, and A. R. Johnston, “Transient behavior of an actively mode-locked semiconductor laser diode,” Appl. Phys. Lett., vol. 41, pp. 124-126, 1982.
44. J. P. Van der Ziel, “Active mode locking of double heterostructure lasers in an external cavity,” J. Appl. Phys., vol. 52, pp. 4435-4446, 1981.
45. E. P. Ippen, D. J. Eilenberger, and R. W. Dixon, “Picosecond pulse generation by passive mode locking of diode lasers,” Appl. Phys. Lett., vol. 37, pp. 267-269, 1980.
46. H. Yokoyama, H. Ito, and H. Inaba, “Generation of subpicosecond coherent optical pulses by passive mode locking of a AlGaAs diode laser,” Appl. Phys. Lett., vol. 40, pp. 105-107, 1982.
47. S. Akiba, G. E. Williams, and H. A. Haus, “High rate pulse generation from InGaAsP laser in selfoc lens external resonator,” Electron. Lett., vol. 17, pp. 527-528, 1981.
48. K. Y. Lau and A. Yariv, “Direct modulation and active mode locking of an ultrahigh speed GaAlAs laser at frequencies up to 18 GHz,” Appl. Phys. Lett., vol. 46, pp. 326-328, 1985.
49. G. Eisenstein, R. S. Tucker, U. Koren, and S. K. Korotky, “Active mode locking characteristics of InGaAsP single-mode fiber composite cavity lasers,” IEEE J. Quantum Electron., vol. QE-22, pp. 142-148, 1986.
50. Y. Silberberg, P. W. Smith, D. A. B. Miller, B. Tell, A. C. Gossard, and W. C. Wiegmann, “Fast multiple quantum well absorber for mode locking of semiconductor lasers,” presented at the Picosecond Electron. and Optoelectron. Meeting, Lake Tahoe, NV, Jan. 1985, pap. WD4.
51. H. A. Haus, “Theory of mode locking of a laser diode in an external resonator,” J. Appl. Phys., vol. 51, pp. 4042-4049, 1980.
52. K. Y. Lau, L. Figueroa, and A. Yariv, “Generation and quenching of intensity pulsations in semiconductor lasers coupled to an external cavity,” IEEE J. Quantum Electron., vol. QE-16, pp. 1329-1336, 1980.
53. L. Figueroa, K. Y. Lau, and A. Yariv, “Intensity self-pulsations in GaAlAs injection lasers operating in an external cavity,” Appl. Phys. Lett., vol. 36, pp. 248-250, 1980.
54. T. Kobayashi, A. Yoshikawa, A. Morimoto, T. Aoki, and T. Sueta, presented at the 11th Int. Quantum Electron. Conf., Boston, MA, 1980.
55. K. Otsuka and H. Kawaguchi, “Theory of optical multistability and chaos in a resonant type semiconductor laser amplifier,” Phys. Rev., vol. 28, no. 5, pp. 3153-3155, 1984.
56. Y. C. Chen, H. G. Winful, and J. M. Liu, “Subharmonic bifurcation and irregular pulsing behavior of modulated semiconductor laser,” Appl. Phys. Lett., vol. 47, pp. 208-210, 1985.
57. H. A. Haus, “A theory of forced mode locking,” IEEE J. Quantum Electron., vol. QE-11, 323-330, 1975.
58. J. AuYeung, “Theory of active mode locking of a laser diode in an external cavity,” IEEE J. Quantum Electron., vol. QE-17, pp. 398-404, 1981.
59. H. A. Haus, “Theory of mode locking with a slow saturable absorber,” IEEE J. Quantum Elec., vol. QE-11, pp. 736-746, 1975.
60. H. A. Haus, “Theory of mode locking with a fast saturable absorber,” J. Appl. Phys., vol. 46, 3049-3058, 1975.
61. H. A. Haus, “Parameter ranges for CW passive mode locking,” IEEE J. Quantum Electron., vol. QE-12, 169-176, 1976.
62. C. H. Henry, “Theory of defect induced pulsations in semiconductor injection lasers,” J. Appl. Phys., vol. 51, pp. 3051-3061, 1980.
63. R. F. Broom, E. Mohn, C. Risch, and R. Salatha, “Microwave self-modulation of a diode laser coupled to an external cavity,” IEEE J. Quantum Electron., vol. QE-6, pp. 335-338, 1970.
64. L. Figueroa, “Study of mode locking in GaAlAs injection lasers,” IEEE J. Quantum Electron., vol. QE-17, pp. 1074-1084, 1981.
65. R. C. Alferness, G. Eisenstein, S. K. Korotky, R. S. Tucker, L. L. Buhl, I. P. Kaminow, and J. J. Veselka, presented at the Opt. Fiber Commun. Conf., New Orleans, LA, 1984, pap. WJ3.
66. R. S. Tucker, G. Eisenstein, and I. P. Kaminow, “10-GHz active mode locking of a 1.3-µm ridge waveguide laser in an optical fiber cavity,” Electron. Lett., vol. 19, pp. 552-553, 1983.
67. K. Y. Lau and A. Yariv, “High frequency current modulation of semiconductor injection lasers,” in Semiconductor and Semimetals, vol. 22, part B. New York: Academic, 1985, ch. 2.
68. K. Y. Lau and A. Yariv, “Direct modulation and active mode locking of an ultrahigh speed GaAlAs laser at frequencies up to 18 GHz,” Appl. Phys. Lett., vol. 46, pp 326-328, 1985.
69. K. Y. Lau, “Efficient narrow-band direct modulation of semiconductor injection lasers at millimeter wave frequencies of 100 GHz and beyond,” Appl. Phys. Lett., vol. 52, pp. 2214-2216, 1988.
70. C. H. Henry, R. A. Logan, and F. R. Merritt, “Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers,” J. Appl. Phys., vol. 51, pp. 3042-3050, 1980.
71. T. P. Lee and R. H. Roldan, “Repetitive Q-switched light pulses from GaAs injection lasers with tandem double section stripe geometry,” IEEE J. Quantum Electron., vol. QE-6, pp. 339-352, 1970.
72. C. Harder, K. Y. Lau, and A. Yariv, “Bistability and pulsations in CW semiconductor lasers with a controlled amount of saturable absorption,” Appl. Phys. Lett., vol. 39, p. 382, 1981.
73. G. J. Lasher, “Analysis of a proposed bistable injection laser,” Solid-State Electron., vol. 7, 707-716, 1964.
74. M. I. Nathan, J. C. Marinace. R. F. Rutz, A. E. Michel, and G. J. Lasher, “GaAs injection laser with noval mode control and switching properties,” J. Appl. Phys., vol. 36, pp. 473-480, 1965.
75. C. Harder, K. Y. Lau, and A. Yariv, “Bistability and pulsations in semiconductor lasers with inhomogeneous current injection,” IEEE J. Quantum Electron., vol. QE-18, pp. 1351-1361, 1982.
76. W. B. Joyce and R. W. Dixon, “Analytic approximations for the Fermi energy of an ideal Fermi Gas,” Appl. Phys. Lett., vol. 31, pp. 354-356, 1977.
77. T. Ikegami and Y. Suematsu, “Large signal characteristics of directly modulated semiconductor injection lasers,” Electron. Comm. Japan, vol. 53B, pp. 69-75, 1970.
78. T. Kobayashi, A. Yoshihawa, A. Morimoto, T. Aoki, and T. Sueta, presented at the 11th Int. Quantum Electron. Conf., Boston, MA, 1980.
79. P. L. Liu, T. C. Daman, and D. J. Eilenberger, presented at the Picosecond Phenomena Meeting, North Falmouth, MA, 1980.
80. C. Lin, P. L. Liu, T. C. Damen, D. J. Eilenberger, and R. L. Hartman, “Simple picosecond pulse generation scheme for injection lasers,” Electron Lett., vol. 16, pp. 600-602, 1980.
81. H. Ito, H. Yokoyama, S. Murata, and H. Inaba, “Picosecond optical pulse generation from an RF modulated AlGaAs DH diode laser,” Electron. Lett., vol. 15, pp. 738-740, 1979; also IEEE J. Quantum Electron., vol. QE-17, pp. 663-670, 1981.
82. J. Auyeung, “Picosecond optical pulse generation at gigahertz rate by direct modulation of a semiconductor laser,” Appl. Phys. Lett., vol. 38, pp. 308-310, 1981.
83. J. P. Van der Ziel and R. A. Logan, “Generation of short optical pulses in semiconductor lasers by combined dc and microwave current injection,” IEEE J. Quantum Electron., vol. QE-18, pp. 1340-1350, 1982.
84. D. Z. Tsang, J. N. Walpole, S. H. Groves, J. J. Hsieh, and J. P. Donnelly, “Intracavity loss modulation of GaInAsP diode lasers,” Appl. Phys. Lett., vol. 38, pp. 120-122, 1980; also D. Z. Tsang, J. N. Walpole, Z. L. Liau, S. H. Groves, and V. Diadiuk, “Q-switching of low threshold buried heterostructure diode lasers at 10 GHz,” Appl. Phys. Lett., vol. 45, pp. 204-206, 1984.
85. Y. Arakawa, A. Larsson, J. Paslaski, and A. Yariv, “Active Q-switching in a GaAs/GaAlAs multiquantum well laser with an intracavity loss modulator,” Appl. Phys. Lett., vol. 45, p. 204, 1984.
86. G. J. Aspin, J. E. Carroll, and R. G. Plumb, “The effect of cavity length on picosecond pulse generation with highly RF modulated AlGaAs DH lasers,” Appl. Phys. Lett., vol. 39, pp. 860-862, 1981.
87. P. M. Downey, J. E. Bowers, R. S. Tucker, and J. M. Wiesenfeld, “Picosecond measurements of gain switching in a semiconductor laser driven by ultrashort electrical pulses,” presented at the Picosecond Electron, and Optoelectron. Meeting, Lake Tahoe, NV, Jan. 1987.
88. P. R. Herzfeld, A. S. Daryoush, A. Rosen, A. Sharma, and V. M. Contarino, “Indirect subharmonic optical injection locking of a millimeter wave IMPATT oscillator,” IEEE J. Microwave Theory Technol., vol. MTT-34, pp. 1371-1376, 1986.
89. K. Y. Lau and A. Yariv, “Self-sustained picosecond pulse generation in a GaAlAs laser at an electrically tunable repetition rate by optoelectronic feedback,” Appl. Phys. Lett., vol. 45, pp. 124-126, 1984.
90. K. Y. Lau, I. Ury, and A. Yariv, “Passive and active mode locking of a semiconductor without an external cavity,” Appl. Phys. Lett., vol. 46, 1117-1119, 1985.
91. F. M. Gardner, Phaselock Techniques. New York: Wiley, 1979.
92. W. C. Lindsey and M. K. Simon, Phase-Locked Loop and Their Applications. New York: IEEE Press, 1978.
93. F. J. Leonberger and P. F. Moulton, “High-speed InP optoelectronic switch,” Appl. Phys. Lett., vol. 35, pp. 712-714, 1979.
94. A. G. Foyt and F. J. Leonberger, “InP optoelectronic switches,” in Picosecond Optoelectronic Devices. New York: Academic, 1984, ch. 9.
95. D. H. Auston, “Picosecond photoconductors: Physical properties and applications,” in Picosecond Optoelectronic Devices. New York: Academic, 1984, ch. 4.
96. Cozine et al., Appl. Phys. Lett., vol. 52, p. 348, 1988.