Distributive Nature of Gate Current and Negative Transconductance in Heterostructure Field-Effect Transistors

IEEE Transactions on Electron Devices

Volumn 36, Issue 2, 1989, Pages 453-456

  Ruden, P P ^a   Shur, M ^a   Akinwande, A I ^b   Jenkins, P ^b  

^a HONEYWELL TECHNOLOGY CENTER   (United States)

^b UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORKS--EQUIVALENT CIRCUITS; SEMICONDUCTOR DIODES--MATHEMATICAL MODELS;

HETEROSTRUCTURE FET; MODFETS; PHENOMENOLOGICAL DIODE MODEL; SCHOTTKY GATE FET;

TRANSISTORS, FIELD EFFECT;

EID: 0024612020     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.19951     Document Type: Article

References (8)

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8. J. H. Baek and M. Shur, submitted for publication.