Incorporation processes in MBE growth of ZnSe

Journal of Crystal Growth

Volumn 95, Issue 1-4, 1989, Pages 533-537

  Venkatasubramanian, R ^a   Otsuka, N ^a   Qiu, J ^a   Kolodziejski, L A ^a   Gunshor, R L ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS--DIFFRACTION; MOLECULAR BEAM EPITAXY; SUBSTRATES;

REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; STOICHIOMETRIC EPILAYERS; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0024606117     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(89)90460-0     Document Type: Article

References (12)

1. Growth Rate and Sticking Coefficient of ZnSe and ZnTe Grown by Molecular Beam Epitaxy
2. Reflection high-energy electron diffraction observations during growth of ZnSxSe1−x(0≤x≤1) by molecular-beam epitaxy
3. Monte Carlo Simulation Of The Growth Of ZnSe By MBE