Modification of metal Schottky contacts on silicon by ion implantation

Nuclear Inst. and Methods in Physics Research, B

Volumn 35, Issue 3-4, 1988, Pages 247-252

  Malherbe, J B ^a   Friedland, E ^a   Myburg, G ^a   Carr, B A ^a   Bredell, L J ^a   Pavlovska, A ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTS--RADIATION EFFECTS;

DEPTH PROFILING; RUTHERFORD BACKSCATTERING; SCHOTTKY BARRIER; SCHOTTKY DIODE CHARACTERISTICS;

SILICON AND ALLOYS;

EID: 0024275777     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(88)90278-9     Document Type: Article

References (23)

1. Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structures
2. Ion-beam mixing of metal-semiconductor eutectic systems
3. Effects of hydrogen ion implantation on Al/Si Schottky diodes
4. these Proceedings (IBA '88)
5. Ion mixing and phase diagrams
6. Formation, structure, and orientation of gold silicide on gold surfaces