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Volumn 35, Issue 6, 1988, Pages 1662-1666

Post-irradiation effects in CMOS integrated circuits

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL--RANDOM ACCESS; SEMICONDUCTOR DEVICES, MOS;

EID: 0024175361     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.25517     Document Type: Article
Times cited : (7)

References (13)
  • 1
    • 84939046507 scopus 로고
    • A Framework for an Integrated Set of Standards for Ionizing Radiation Testing of Microelectronics
    • D. B. Brown and A. H. Johnston, “A Framework for an Integrated Set of Standards for Ionizing Radiation Testing of Microelectronics,” IEEE Trans. Nucl. Sci., NS-34, 1720–1775 (1987).
    • (1987) IEEE Trans. Nucl. Sci. , vol.NS-34 , pp. 1720-1775
    • Brown, D.B.1    Johnston, A.H.2
  • 2
    • 84938002290 scopus 로고
    • Hole Transport and Charge Relaxation in Irradiated SiO 2, MOS Capacitors
    • H. E. Boesch, Jr., F. B. McLean, J. M. McGarrity, and G. A. Ausman, “Hole Transport and Charge Relaxation in Irradiated SiO 2, MOS Capacitors,” IEEE Trans. Nucl. Sci.,„ NS-22, 2163–2167 (1975).
    • (1975) IEEE Trans. Nucl. Sci. , vol.NS-22 , pp. 2163-2167
    • Boesch, H.E.1    McLean, F.B.2    McGarrity, J.M.3    Ausman, G.A.4
  • 3
    • 36749111931 scopus 로고
    • Hole Mobility and Transport in Thin SiO 2 Films
    • R. C. Hughes, “Hole Mobility and Transport in Thin SiO 2 Films,” Appl. Phys. Lett., 26, 436-438 (1975).
    • (1975) Appl. Phys. Lett. , vol.26 , pp. 436--438
    • Hughes, R.C.1
  • 4
    • 0017638751 scopus 로고
    • CMOS Hardness Prediction for Low-Dose-Rate Environments
    • G. F. Derbenwick and H. H. Sander, “CMOS Hardness Prediction for Low-Dose-Rate Environments,” IEEE Trans. Nucl. Sci., NS-24, 2244–2247 (1977).
    • (1977) IEEE Trans. Nucl. Sci. , vol.NS-24 , pp. 2244-2247
    • Derbenwick, G.F.1    Sander, H.H.2
  • 5
    • 0020751109 scopus 로고
    • Interface Trap Generation in Silicon Dioxide When Electrons are Captured by Trapped Holes
    • S. K. Lai, “Interface Trap Generation in Silicon Dioxide When Electrons are Captured by Trapped Holes,” J. Appl. Phys., 54, 2540–2546 (1983).
    • (1983) J. Appl. Phys. , vol.54 , pp. 2540-2546
    • Lai, S.K.1
  • 6
    • 0346840948 scopus 로고
    • Diffusion of Radiolytic Molecular Hydrogen as a Mechanism for the Post-Irradiation Buildup of Interface States in SiO 2 -on-Si Structures
    • D. L. Griscom, “Diffusion of Radiolytic Molecular Hydrogen as a Mechanism for the Post-Irradiation Buildup of Interface States in SiO 2 -on-Si Structures,” J. Appl. Phys., 58, 2524–2533 (1985).
    • (1985) J. Appl. Phys. , vol.58 , pp. 2524-2533
    • Griscom, D.L.1
  • 8
    • 0041302432 scopus 로고
    • A Reevaluation of Worst-Case Post-Irradiation Response for Hardened MOS Transistors
    • D. M. Fleetwood, P. V. Dressendorfer and D. C. Turpin, “A Reevaluation of Worst-Case Post-Irradiation Response for Hardened MOS Transistors,” IEEE Trans. Nucl. Sci., NS-34, 1178–1183 (1987).
    • (1987) IEEE Trans. Nucl. Sci. , vol.NS-34 , pp. 1178-1183
    • Fleetwood, D.M.1    Dressendorfer, P.V.2    Turpin, D.C.3
  • 9
    • 84939068374 scopus 로고
    • Generation of Interface States by Ionizing Radiation at 80K Measured by Charge Pumping and Subthreshold Slope Techniques
    • N. S. Saks and M. G. Ancona, “Generation of Interface States by Ionizing Radiation at 80K Measured by Charge Pumping and Subthreshold Slope Techniques,” IEEE Trans. Nucl. Sci., NS-34, 1348–1354 (1987).
    • (1987) IEEE Trans. Nucl. Sci. , vol.NS-34 , pp. 1348-1354
    • Saks, N.S.1    Ancona, M.G.2
  • 10
    • 0346205033 scopus 로고
    • Total Dose Hardness Assurance of Microcircuits for Space Environment
    • P. Buchman, “Total Dose Hardness Assurance of Microcircuits for Space Environment,” IEEE Trans. Nucl. Sci., NS-33, 1352–1358 (1988).
    • (1988) IEEE Trans. Nucl. Sci. , vol.NS-33 , pp. 1352-1358
    • Buchman, P.1
  • 11
    • 0022916330 scopus 로고
    • Dose Rate Effects on Total Dose Damage
    • J. L. Azarewicz, “Dose Rate Effects on Total Dose Damage,” IEEE Trans. Nucl. Sci.,„ NS-33, 1420–1424 (1986).
    • (1986) IEEE Trans. Nucl. Sci. , vol.NS-33 , pp. 1420-1424
    • Azarewicz, J.L.1
  • 12
    • 0023979534 scopus 로고
    • JFET/SOS Devices - Part II: Gamma-Radiation-Induced Effects
    • L. F. Halle, T. C. Zietlow, and C. E. Barnes, “JFET/SOS Devices - Part II: Gamma-Radiation-Induced Effects,” IEEE Trans. Elect. Dev., ED-35, 359–364 (1988).
    • (1988) IEEE Trans. Elect. Dev. , vol.ED-35 , pp. 359-364
    • Halle, L.F.1    Zietlow, T.C.2    Barnes, C.E.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.