Ferroelectric memories: A possible answer to the hardened nonvolatile question

IEEE Transactions on Nuclear Science

Volumn 35, Issue 6, 1988, Pages 1461-1466

  Messenger, George C ^a   Coppage, Floyd N ^a  

^a R&D Associates ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COST ACCOUNTING; FERROELECTRIC DEVICES;

NONDESTRUCTIVE READOUT; RADIATION HARDENING;

DATA STORAGE, DIGITAL;

EID: 0024173164     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.25481     Document Type: Article

References (7)

1. Evans, Miller and Bullington, “International Electron Devices Technical Meeting,” Washington, DC, 1987.
2. Feynman, R.P., The Feynman Lectures on Physics, Addison Wesley, 1963.
3. Wrobel, Bullington and Schweer, “Radiation Hardness Evaluation of Thin Film Ferroelectric Capacitors” (to be published).
4. Bullington, D. and Crawford, J., Radiation Damage in Solids, Princeton University Press, 1961.
5. Landolt-Börnstein, “Numerical Data and Functional Relationships in Science and Technology,” Group III: Crystal and Solid State Physics, Volume 16, Ferroelectric and Related Substances, Subvolume A: Oxides, p. 368, Fig. 396.
6. Kittel, C., Introduction to Solid State Physics, 4th ed., John Wiley & Sons, 1971.
7. Messenger, G., “Collection of Charge on Junction Nodes from Ion Tracks,” IEEE Tran. on Nuc. Sci., Vol. NS-29, No. 6, 2024–2031, December 1982.