Designing MOS inputs and outputs to avoid oxide failure in the charged device model

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Volumn , Issue , 1988, Pages 220-227

  Maloney, Timothy J ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC DISCHARGES--STATIC ELECTRICITY; ELECTROSTATICS; INTEGRATED CIRCUITS--PROTECTION; OXIDES--FAILURE;

CHARGED DEVICE MODEL; ELECTROSTATIC DISCHARGE (ESD); MOS INPUTS; MOS INTEGRATED CIRCUITS; MOS OUTPUTS; OXIDE FAILURE;

SEMICONDUCTOR DEVICES, MOS;

EID: 0024170254     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)