New insight into hot-electron-induced degradation of n-MOSFET's

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1988, Pages 196-199

  Chan, T Y ^a   Chiang, C L ^a   Gaw, H ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC CIRCUITS; ELECTRONS;

ANALOG CIRCUITS; CHANNEL ELECTRIC FIELD; HOT-ELECTRON RELIABILITY; HOT-ELECTRON-INDUCED DEGRADATION; LONG-CHANNEL MOSFET;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024170167     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)