High-Performance GaAs Heterojunction Bipolar Transistor Monolithic Logarithmic IF Amplifiers

IEEE Transactions on Microwave Theory and Techniques

Volumn 36, Issue 12, 1988, Pages 1958-1965

  Oki, A K ^a   Kim, M E ^a   Gorman, G M ^a   Camou, J B ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS, LOGARITHMIC; INTEGRATED CIRCUITS, MONOLITHIC; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE--GROWTH; TRANSISTORS, BIPOLAR--HETEROJUNCTIONS;

DUAL GAIN STAGES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

AMPLIFIERS, INTERMEDIATE FREQUENCY;

EID: 0024168949     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.17440     Document Type: Article

References (9)

1. R. S. Hughes, Logarithmic Amplification With Application to Radar and EW. Dedham, MA: Artech House. 1986.
2. M. A. Smith. “A GaAs monolithic true logarithmic amplifier for 0.5 to 4 GHz applications.” in Microwave and Millimeter-Wave Monolithic Circuits Symp. Tech. Dig., 1988, pp. 37–40.
3. J. Browne, “Wide-ranging hybrid logamps rise quickly.” Microwaves & RF, vol. 27. pp. 207–213, 1988.
4. A. K. Oki et al., “High performance GaAs/AlGaAs heterojunction bipolar transistor 4-bit and 2-bit A/D converters and 8-bit D/A convener.” in GaAs IC Symp. Tech. Dig., 1987. pp. 137–140.
5. G. M. Gorman, J. B. Camou, A. K. Oki. B. K. Oyama. and M. E. Kim. “High performance sample-and-hold implemented with GaAs/AIGaAs heterojunction bipolar transistor technology,” in IEDM Tech. Dig., 1987. pp. 623–626.
6. N. H. Sheng et al., “High power GaAlAs/GaAs HBTs for microwave applications,” in IEDM Tech. Dig., 1987, pp. 619–622.
7. K. Nagata et al., “Self-aligned AlGaAs/GaAs HBT with low emitter resistance utilizing InGaAs cap layer,” IEEE Trans. Electron Devices, vol. 35. pp. 2–7. Jan. 1988.
8. W. Barber and E. Brown. “A true logarithmic amplifier for radar IF applications.” IEEE J. Solid-State Circuits, vol. SC-15, pp. 291–295, 1980.
9. M. H. Kim et al., “12-40 GHz low harmonic distortion and phase noise performance of GaAs heterojunction bipolar transistors,” presented at the 1988 IEEE. GaAs IC Symp., Nashville. TN. Nov. 6–9. 1988.