A Simulation Model for Electromigration in Fine-Line Metallization of Integrated Circuits Due to Repetitive Pulsed Currents

IEEE Transactions on Electron Devices

Volumn 35, Issue 12, 1988, Pages 2170-2179

  Harrison, James W ^a  

^a CLEMSON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT MANUFACTURE; SEMICONDUCTOR DEVICES--RELIABILITY;

ELECTROMIGRATION; FINE-LINE METALLIZATION; INTERCONNECT METALLIZATION LINES; POWER DISSIPATION; SWITCHING SPEEDS;

INTEGRATED CIRCUITS, VLSI;

EID: 0024123630     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.8791     Document Type: Article

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