Planar-Structre InP IInGaAsP IInGaAs Avalanche Photodiodes with Preferential Laterl Extended Guard Ring for 1.0-1.6 μm Wavelength Optical Comunication Use

Journal of Lightwave Technology

Volumn 6, Issue 11, 1988, Pages 1643-1655

  Taguchi, Kenko ^a   Torikai, Toshitaka ^a   Sugimoto, Yoshimasa ^a   Makita, Kikuo ^a   Ishihara, Hisahiro ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL COMMUNICATION SYSTEMS; SEMICONDUCTOR DIODES, AVALANCHE; SEMICONDUCTOR DIODES, PHOTODIODE--STRUCTURES;

AVALANCHE PHOTODIODES; DARK CURRENT CHARACTERISTICS; PLANAR STRUCTURE DESIGN; PREFERENTIAL LATERAL EXTENDED GUARD RING;

OPTICAL COMMUNICATION EQUIPMENT;

EID: 0024107633     PISSN: 07338724     EISSN: 15582213     Source Type: Journal    
DOI: 10.1109/50.9980     Document Type: Letter

References (10)

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10. Y. Malsushima, K. Sakai, S. Akiba, and T. Yamamoto, “Zn-difused diodes for optical fiber communication at OptoElectronics Research Laboratories, and is now at the Compound Semiconductor Device Divison. Mr. Taguchi is a member of the Japan Society of Applied Physics and the Institute of Electronics. Information. and Communication Engineers of Japan.