Kinetics of fast steps on crystal surfaces and its application to the molecular beam epitaxy of silicon

IBM Journal of Research and Development

Volumn 32, Issue 6, 1988, Pages 804-818

  Ghez, Richard ^a   Iyer, Subramanian S ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS--EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY;

ADATOM CONCENTRATION DISTRIBUTION; CAPTURE PROBABILITIES; LOCAL EQUILIBRIUM; STEFAN PROBLEM; STEP VELOCITY; SURFACE STEPS;

SEMICONDUCTING SILICON;

EID: 0024107153     PISSN: 00188646     EISSN: None     Source Type: Journal    
DOI: 10.1147/rd.326.0804     Document Type: Article

References (73)