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Volumn 27, Issue 11R, 1988, Pages 2098-2106
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Band-Gap energy anomaly and sublattice ordering in GalnP and AlGalnP grown by metalorganic vapor phase epitaxy
a a a a a a a
a
NEC CORPORATION
(Japan)
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Author keywords
AlGalnP; AllnP; Band gap energy; GalnP; Monolayer superlattice; MOVPE; Raman scattering spectrum; Sublattice ordering; TEM; XMA
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Indexed keywords
BAND STRUCTURE;
MICROSCOPIC EXAMINATION--TRANSMISSION ELECTRON MICROSCOPY;
PHOTOLUMINESCENCE;
SEMICONDUCTING ALUMINUM COMPOUNDS--THIN FILMS;
SEMICONDUCTOR MATERIALS--STRUCTURE;
ALUMINUM GALLIUM INDIUM PHOSPHIDE;
BAND GAP ENERGY ANOMALY;
GALLIUM INDIUM PHOSPHIDE;
METALORGANIC VAPOR PHASE EPITAXY;
SUBLATTICE ORDERING;
SUPERLATTICES;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0024106613
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.27.2098 Document Type: Article |
Times cited : (172)
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References (16)
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