n-Channel MOSFET Breakdown Characteristics and Modeling for p-Well Technologies

IEEE Transactions on Electron Devices

Volumn 35, Issue 11, 1988, Pages 1935-1941

  Beitman, Bruce A ^a  

^a INTERSIL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; TRANSISTORS, BIPOLAR;

CMOS DEVICES; DRAIN AVALANCHE BREAKDOWN; GATE LENGTH; PARASITIC BIPOLAR TRANSISTORS; SNAPBACK SUSTAINING VOLTAGE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024106269     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.7407     Document Type: Article

References (13)

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