Iodine-doped low-resistivity n-type ZnSe films grown by MOVPE

Journal of Crystal Growth

Volumn 93, Issue 1-4, 1988, Pages 703-707

  Shibata, Noriyoshi ^a   Ohki, Akira ^a   Katsui, Akinori ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS--EPITAXIAL GROWTH; IODINE; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS;

ALKYLIODIDE; METALORGANIC VAPOR PHASE EPITAXY; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0024104461     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(88)90607-0     Document Type: Article

References (10)

1. Preparation of low-resistivity n-type ZnSe by organometallic chemical vapor deposition
2. Superiority of group VII elements over group III elements as donor dopants in MOCVD ZnSe
3. Ga-Doped ZnSe Grown by Molecular Beam Epitaxy for Blue Light Emitting Diodes
4. Use of Ethyliodide in Preparation of Low-Resistivity n-Type ZnSe by Metalorganic Vapor Phase Epitaxy
5. Analysis of N-Type GaAs with Electron-Beam-Excited Radiative Recombination