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Volumn 76, Issue 11, 1988, Pages 1510-1526

Radiation Testing of Semiconductor Devices for Space Electronics

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC EQUIPMENT TESTING; ELECTRONIC EQUIPMENT--SPACE APPLICATIONS;

EID: 0024104348     PISSN: 00189219     EISSN: 15582256     Source Type: Journal    
DOI: 10.1109/5.90110     Document Type: Article
Times cited : (39)

References (69)
  • 1
    • 16644399101 scopus 로고
    • Surface effects of radiation on transistors”
    • Jan.
    • D. S. Peck et al., “Surface effects of radiation on transistors”, Bell Syst. Tech. J., vol. 42, p. 95, Jan. 1963.
    • (1963) Bell Syst. Tech. J. , vol.42 , pp. 95
    • Peck, D.S.1
  • 2
    • 0023576539 scopus 로고
    • Total dose hardness assurance for low earth orbit”
    • Dec.
    • R. H. Maurer and J. J. Suter, “Total dose hardness assurance for low earth orbit”, IEEE Trans. Nuc. Sci., vol. NS-34, p. 1757, Dec. 1987.
    • (1987) IEEE Trans. Nuc. Sci. , vol.NS-34 , pp. 1757
    • Maurer, R.H.1    Suter, J.J.2
  • 3
    • 0021587255 scopus 로고
    • The effects of solar flares on single event upset rates”
    • Dec.
    • J. H. Adams, and A. Gelman, “The effects of solar flares on single event upset rates”, IEEE Trans. Nuc. Sci., vol. NS-31, p. 1213, Dec. 1984.
    • (1984) IEEE Trans. Nuc. Sci. , vol.NS-31 , pp. 1213
    • Adams, J.H.1    Gelman, A.2
  • 4
    • 0020304245 scopus 로고
    • The natural radiation environment inside spacecraft”
    • Dec.
    • J. H. Adams, Jr., “The natural radiation environment inside spacecraft”, IEEE Trans. Nuc. Sci., vol. NS-29, p. 2095, Dec. 1982.
    • (1982) IEEE Trans. Nuc. Sci. , vol.NS-29 , pp. 2095
    • Adams, J.H.1
  • 5
    • 84879462839 scopus 로고
    • Non-equatorial terrestrial low altitude charged particle radiation environment”
    • NASA rep. X-600-87-7, May
    • E. C. Stassinopoulos and J. M. Barth, “Non-equatorial terrestrial low altitude charged particle radiation environment”, NASA rep. X-600-87-7, May 1987.
    • (1987)
    • Stassinopoulos, E.C.1    Barth, J.M.2
  • 7
    • 0022879598 scopus 로고
    • Total dose hardness assurance for microcircuits for space environment”
    • Dec.
    • P. Buchman, “Total dose hardness assurance for microcircuits for space environment”, IEEE Trans. Nuc. Sci., vol. NS-33, p. 1352, Dec. 1986.
    • (1986) IEEE Trans. Nuc. Sci. , vol.NS-33 , pp. 1352
    • Buchman, P.1
  • 8
    • 0001046069 scopus 로고
    • Correlation of radiation effects in transistors and integrated circuits”
    • Dec.
    • F. W. Sexton and J. R. Schwank, “Correlation of radiation effects in transistors and integrated circuits”, IEEE Trans.Nuc. Sci., vol. NS-32, no. 6, p. 3975, Dec. 1985.
    • (1985) IEEE Trans.Nuc. Sci. , vol.NS-32 , Issue.6 , pp. 3975
    • Sexton, F.W.1    Schwank, J.R.2
  • 9
    • 0021587257 scopus 로고
    • Physical mechanisms contributing to device 'rebound'”
    • Dec.
    • J. R. Schwank et al., “Physical mechanisms contributing to device 'rebound'”, IEEE Trans. Nuc. Sci., vol. NS-31, p. 1434, Dec. 1984.
    • (1984) IEEE Trans. Nuc. Sci. , vol.NS-31 , pp. 1434
    • Schwank, J.R.1
  • 10
    • 0021609581 scopus 로고
    • Super recovery of total dose damage in MOS devices”
    • Dec.
    • A. H.Johnston, “Super recovery of total dose damage in MOS devices”, IEEE Trans. Nuc. Sci., vol. NS-31, p. 1427, Dec. 1984.
    • (1984) IEEE Trans. Nuc. Sci. , vol.NS-31 , pp. 1427
    • Johnston, H.1
  • 11
    • 84939334707 scopus 로고
    • The combined effect of ionizing radiation and bias-temperature stressing on CMOS inverters”
    • oRep. no. SLA-73-1122, Sandia National Laboratory, Dec.
    • R. L. Pease, “The combined effect of ionizing radiation and bias-temperature stressing on CMOS inverters”, oRep. no. SLA-73-1122, Sandia National Laboratory, Dec. 1973.
    • (1973)
    • Pease, R.L.1
  • 12
    • 0017217554 scopus 로고
    • Dependence on interface-state buildup on hole generation and transport in irradiated MOS capacitors”
    • Dec.
    • P. S. Winokur, J. M. McCarrity, and H. E. Boesch, Jr., “Dependence on interface-state buildup on hole generation and transport in irradiated MOS capacitors”, IEEE Trans. Nuc. Sci., vol. NS-23, no. 6, p. 1580, Dec. 1976.
    • (1976) IEEE Trans. Nuc. Sci. , vol.NS-23 , Issue.6 , pp. 1580
    • Winokur, P.S.1    Mccarrity, J.M.2    Boesch, H.E.3
  • 13
    • 0020900961 scopus 로고
    • Total dose effects in recessed oxide digital bipolar microcircuits”
    • Dec.
    • R. L. Pease et al., “Total dose effects in recessed oxide digital bipolar microcircuits”, IEEE Trans. Nuc. Sci., vol. NS-30, no. 6, p. 4216, Dec. 1983.
    • (1983) IEEE Trans. Nuc. Sci. , vol.NS-30 , Issue.6 , pp. 4216
    • Pease, R.L.1
  • 14
    • 3743153188 scopus 로고
    • Total dose failure mechanisms of integrated circuits in laboratory and space environments”
    • Dec.
    • P. S. Winokur et al., “Total dose failure mechanisms of integrated circuits in laboratory and space environments”, IEEE Trans. Nuc. Sci., vol. NS-34, no. 6, Dec. 1987.
    • (1987) IEEE Trans. Nuc. Sci. , vol.NS-34 , Issue.6
    • Winokur, P.S.1
  • 15
    • 84904466214 scopus 로고
    • Satellite anomalies from galactic cosmic rays”
    • Dec.
    • D. Binder, E. C. Smith, and A. B. Holman, “Satellite anomalies from galactic cosmic rays”, IEEE Trans. Nuc. Sci., vol. NS-22, no. 6, p. 2675, Dec. 1975.
    • (1975) IEEE Trans. Nuc. Sci. , vol.NS-22 , Issue.6 , pp. 2675
    • Binder, D.1    Smith, E.C.2    Holman, A.B.3
  • 16
    • 0018554158 scopus 로고
    • Simulation of cosmic ray induced soft errors and latchup in integrated circuit computer memories”
    • Dec.
    • W. A. Kolasinski et al., “Simulation of cosmic ray induced soft errors and latchup in integrated circuit computer memories”, IEEE Trans. Nuc. Sci., vol. NS-26, p. 5087, Dec. 1979.
    • (1979) IEEE Trans. Nuc. Sci. , vol.NS-26 , pp. 5087
    • Kolasinski, W.A.1
  • 17
    • 0020915917 scopus 로고
    • Latchup in CMOS devices from heavy ions”
    • Dec.
    • K. Solimanand D. K. Nichols, “Latchup in CMOS devices from heavy ions”, IEEE Trans. Nuc. Sci., vol. NS-30, p. 4514, Dec. 1983.
    • (1983) IEEE Trans. Nuc. Sci. , vol.NS-30 , pp. 4514
    • Solimanand, K.1    Nichols, D.K.2
  • 18
    • 79951849412 scopus 로고
    • Heavy ion induced permanent damage in MNOS gate insulators”
    • Dec.
    • J. C. Pickel et al., “Heavy ion induced permanent damage in MNOS gate insulators”, IEEE Trans. Nuc. Sci., vol. NS-33, p. 4176, Dec. 1985.
    • (1985) IEEE Trans. Nuc. Sci. , vol.NS-33 , pp. 4176
    • Pickel, J.C.1
  • 19
    • 0022921353 scopus 로고
    • Burnout of power MOS transistors with heavy ions of 252 Cf”
    • Dec.
    • A. E. Waskiewicz et al., “Burnout of power MOS transistors with heavy ions of 252 Cf”, IEEE Trans. Nuc. Sci., vol. NS-33, p. 1710, Dec. 1986.
    • (1986) IEEE Trans. Nuc. Sci. , vol.NS-33 , pp. 1710
    • Waskiewicz, A.E.1
  • 20
    • 84859869325 scopus 로고
    • Heavy ion induced gate rupture in power MOSFETs”
    • Dec.
    • T. A. Fischer, “Heavy ion induced gate rupture in power MOSFETs”, IEEE Trans. on Nuc. Sci., vol. NS-34, p. 1786, Dec. 1987.
    • (1987) IEEE Trans. on Nuc. Sci. , vol.NS-34 , pp. 1786
    • Fischer, T.A.1
  • 21
    • 0019551234 scopus 로고
    • A field-fun-neling effect on the collection of alpha-particle-generated carriers in silicon devices”
    • Apr.
    • C. M. Hsieh, P. C. Murley, and R. R. O'Brien, “A field-fun-neling effect on the collection of alpha-particle-generated carriers in silicon devices”, IEEE Electron Device Lett., vol. EDL-2, no. 4, p. 103, Apr. 1981.
    • (1981) IEEE Electron Device Lett. , vol.EDL-2 , Issue.4 , pp. 103
    • Hsieh, C.M.1    Murley, P.C.2    O'Brien, R.R.3
  • 22
    • 0021599334 scopus 로고
    • Single-event upset rate predictions for complex logic systems”
    • Dec.
    • S. E. Diehl-Nagle, J. E. Vinson, and E. L. Petersen, “Single-event upset rate predictions for complex logic systems”, IEEE Trans. Nuc. Sci., vol. NS-31, no. 6, p. 1132, Dec. 1984.
    • (1984) IEEE Trans. Nuc. Sci. , vol.NS-31 , Issue.6 , pp. 1132
    • Diehl-Nagle, S.E.1    Vinson, J.E.2    Petersen, E.L.3
  • 23
    • 0022890049 scopus 로고
    • Energy dependence of proton induced displacement damage in silicon”
    • Dec.
    • E. A. Burke, “Energy dependence of proton induced displacement damage in silicon”, IEEE Trans. Nuc. Sci., vol. NS-33, no. 6, p. 1276, Dec. 1986.
    • (1986) IEEE Trans. Nuc. Sci. , vol.NS-33 , Issue.6 , pp. 1276
    • Burke, E.A.1
  • 24
    • 0023594012 scopus 로고
    • Correlation of particle-induced displacement damage in silicon”
    • Dec.
    • C. P. Summers et al., “Correlation of particle-induced displacement damage in silicon”, IEEE Trans. Nuc. Sci., vol. NS-34, no. 6, p. 1134, Dec. 1987.
    • (1987) IEEE Trans. Nuc. Sci. , vol.NS-34 , Issue.6 , pp. 1134
    • Summers, C.P.1
  • 25
    • 0038428103 scopus 로고
    • Radiation hardened CMOS/ SOS”
    • Dec.
    • K. C. Aubuchon and E. Harari, “Radiation hardened CMOS/ SOS”, IEEE Trans. Nuc. Sci., vol. NS-22, no. 6, p. 2181, Dec. 1975.
    • (1975) IEEE Trans. Nuc. Sci. , vol.NS-22 , Issue.6 , pp. 2181
    • Aubuchon, K.C.1    Harari, E.2
  • 26
    • 0022916330 scopus 로고
    • Dose rate effects on total dose damage”
    • Dec.
    • J. L. Azarewicz, “Dose rate effects on total dose damage”, IEEE Trans. Nuc. Sci., vol. NS-33, no. 6, p. 1420, Dec. 1986.
    • (1986) IEEE Trans. Nuc. Sci. , vol.NS-33 , Issue.6 , pp. 1420
    • Azarewicz, J.L.1
  • 28
    • 0016509127 scopus 로고
    • Theory of the MOS transistor in weak inversion-new method to determine the number of surface states”
    • R. J. Van Overstraeten, G.J. Declerck, and P. A. Muls, “Theory of the MOS transistor in weak inversion-new method to determine the number of surface states”, IEEE Trans. Electron Devices, vol. ED-22, pp. 282–288, 1975.
    • (1975) IEEE Trans. Electron Devices , vol.ED-22 , pp. 282-288
    • Van Overstraeten, R.J.1    Declerck, G.J.2    Muls, P.A.3
  • 30
    • 0021605304 scopus 로고
    • Correlating the radiation response of MOS capacitors and transistors”
    • Dec.
    • P. S. Winokur et al., “Correlating the radiation response of MOS capacitors and transistors”, IEEE Trans. Nuc. Sci., vol. NS-31, Dec. 1984.
    • (1984) IEEE Trans. Nuc. Sci. , vol.NS-31
    • Winokur, P.S.1
  • 31
    • 0021609193 scopus 로고
    • A simple model for separating interface and oxide charge effects in MOS device characteristics”
    • Dec.
    • K. F. Galloway, M. Gaitan, and T. J. Russel, “A simple model for separating interface and oxide charge effects in MOS device characteristics”, IEEE Trans. Nuc. Sci., vol. NS-31, Dec. 1984.
    • (1984) IEEE Trans. Nuc. Sci. , vol.NS-31
    • Galloway, K.F.1    Gaitan, M.2    Russel, T.J.3
  • 32
    • 0020271819 scopus 로고
    • X-ray wafer probe for total dose testing”
    • Dec.
    • L. J. Palkuti and J.J. LePage, “X-ray wafer probe for total dose testing”, IEEE Trans. Nuc. Sci., vol. NS-29, p. 1832, Dec. 1982.
    • (1982) IEEE Trans. Nuc. Sci. , vol.NS-29 , pp. 1832
    • Palkuti, L.J.1    Lepage, J.J.2
  • 33
    • 0022185025 scopus 로고
    • A comparison of conventional dose rate and low dose rate 60Co testing of IDT static RAM and FSC multiplexers”
    • Dec.
    • D. Schiff et al., “A comparison of conventional dose rate and low dose rate 60Co testing of IDT static RAM and FSC multiplexers”, IEEE Trans. Nuc. Sci., vol. NS-32, p. 4050, Dec. 1985.
    • (1985) IEEE Trans. Nuc. Sci. , vol.NS-32 , pp. 4050
    • Schiff, D.1
  • 34
    • 0020936776 scopus 로고
    • Predicting CMOS inverter response in nuclear and space satellite environments”
    • Dec.
    • P. S. Winokur, K. G. Kerris, and L. Harper, “Predicting CMOS inverter response in nuclear and space satellite environments”, IEEE Trans. Nuc. Sci., vol. NS-30, p. 4326, Dec. 1983.
    • (1983) IEEE Trans. Nuc. Sci. , vol.NS-30 , pp. 4326
    • Winokur, P.S.1    Kerris, K.G.2    Harper, L.3
  • 35
    • 0017638751 scopus 로고
    • CMOS hardness prediction for low-dose-rate environments”
    • Dec.
    • G. F. Derbenwick and H. H. Sander, “CMOS hardness prediction for low-dose-rate environments”, IEEE Trans. Nuc. Sci., vol. NS-24, no. 6, p. 2244, Dec. 1977.
    • (1977) IEEE Trans. Nuc. Sci. , vol.NS-24 , Issue.6 , pp. 2244
    • Derbenwick, G.F.1    Sander, H.H.2
  • 36
    • 84939046507 scopus 로고
    • A framework for an integrated set of standards for ionizing radiation testing of microelectronics”
    • Dec.
    • D. B. Brown and A. H. Johnston, “A framework for an integrated set of standards for ionizing radiation testing of microelectronics”, IEEE Trans. Nuc. Sci., vol. NS-34, p. 1710, Dec. 1987.
    • (1987) IEEE Trans. Nuc. Sci. , vol.NS-34 , pp. 1710
    • Brown, D.B.1    Johnston, A.H.2
  • 37
    • 84939326530 scopus 로고
    • Postirradiation effects in CMOS microcircuits”
    • presented at IEEE 1988 NSREC, Portland, OR, July
    • T. Zeitlow et al., “Postirradiation effects in CMOS microcircuits”, presented at IEEE 1988 NSREC, Portland, OR, July 1988.
    • (1988)
    • Zeitlow, T.1
  • 38
    • 84939053099 scopus 로고
    • Minimum size and maximum packing density of nonredundant semiconductor devices”
    • Mar.
    • J. T. Wallmark and S. M. Marcus, “Minimum size and maximum packing density of nonredundant semiconductor devices”, Proc. IRE, p. 286, Mar. 1962.
    • (1962) Proc. IRE , pp. 286
    • Wallmark, J.T.1    Marcus, S.M.2
  • 39
    • 0020952139 scopus 로고
    • Charge collection measurements for heavy ions incident on n-and p-type silicon”
    • Dec.
    • T. R. Oldham and F. B. McLean, “Charge collection measurements for heavy ions incident on n-and p-type silicon”, IEEE Trans. Nuc. Sci., vol. NS-30, no. 6, p. 4493, Dec. 1983.
    • (1983) IEEE Trans. Nuc. Sci. , vol.NS-30 , Issue.6 , pp. 4493
    • Oldham, T.R.1    Mclean, F.B.2
  • 40
    • 0020904494 scopus 로고
    • Charge collection in test structures”
    • Dec.
    • A. B. Campbell, “Charge collection in test structures”, IEEE Trans. Nuc. Sci., vol. NS-30, no. 6, p. 4486, Dec. 1983.
    • (1983) IEEE Trans. Nuc. Sci. , vol.NS-30 , Issue.6 , pp. 4486
    • Campbell, A.B.1
  • 41
    • 0021615545 scopus 로고
    • Charge collection in multilayer structures”
    • Dec.
    • A. R. Knudson et al., “Charge collection in multilayer structures”, IEEE Trans. Nuc. Sci., vol. NS-31, no. 6, p. 1149, Dec. 1984.
    • (1984) IEEE Trans. Nuc. Sci. , vol.NS-31 , Issue.6 , pp. 1149
    • Knudson, A.R.1
  • 42
    • 0020312672 scopus 로고
    • Charging tunneling in n-and p-type substrates”
    • Dec.
    • F. B. McLean and T. R. Oldham, “Charging tunneling in n-and p-type substrates”, IEEE Trans. Nuc. Sci., vol. NS-29, no. 6, p. 2018, Dec. 1982.
    • (1982) IEEE Trans. Nuc. Sci. , vol.NS-29 , Issue.6 , pp. 2018
    • Mclean, F.B.1    Oldham, T.R.2
  • 43
    • 0022188818 scopus 로고
    • Ion track shunt effects in multi-junction structures”
    • Dec.
    • J. R. Hauser et al., “Ion track shunt effects in multi-junction structures”, IEEE Trans. Nuc. Sci., vol. NS-32, no. 6, p. 4115, Dec. 1985.
    • (1985) IEEE Trans. Nuc. Sci. , vol.NS-32 , Issue.6 , pp. 4115
    • Hauser, J.R.1
  • 44
    • 0041792978 scopus 로고
    • Transient measurements of ultrafast charge collection in semiconductor diodes”
    • Dec.
    • R. S. Wagner et al., “Transient measurements of ultrafast charge collection in semiconductor diodes”, IEEE Trans. Nuc. Sci., vol. NS-34, no. 6, p. 1240, Dec. 1987.
    • (1987) IEEE Trans. Nuc. Sci. , vol.NS-34 , Issue.6 , pp. 1240
    • Wagner, R.S.1
  • 45
    • 0019701394 scopus 로고
    • Ionization of Si02 by heavy charged particles”
    • Dec.
    • T. R. Oldham and J. M. McGarrity, “Ionization of Si02 by heavy charged particles”, IEEE Trans. Nuc. Sci., vol. NS-28, no. 6, p. 3975, Dec. 1981.
    • (1981) IEEE Trans. Nuc. Sci. , vol.NS-28 , Issue.6 , pp. 3975
    • Oldham, T.R.1    Mcgarrity, J.M.2
  • 46
    • 0021635963 scopus 로고
    • A comparison of heavy ions sou rcesused in cosmic ray simulation studies of VLSI circuits”
    • Dec.
    • J. H. Stephen et al., “A comparison of heavy ions sou rcesused in cosmic ray simulation studies of VLSI circuits”, IEEE Trans. Nuc. Sci., vol. NS-31, p. 1069, Dec. 1984.
    • (1984) IEEE Trans. Nuc. Sci. , vol.NS-31 , pp. 1069
    • Stephen, J.H.1
  • 47
    • 77957227483 scopus 로고
    • The use of252 Cf to measure latchup cross sections as a function of LET”
    • Dec.
    • M. Reier, “The use of252 Cf to measure latchup cross sections as a function of LET”, IEEE Trans. Nuc. Sci., vol. NS-33, p. 1642, Dec. 1986.
    • (1986) IEEE Trans. Nuc. Sci. , vol.NS-33 , pp. 1642
    • Reier, M.1
  • 48
    • 0022241801 scopus 로고
    • Use of 252Cf to determine parameters for SEU rate calculation”
    • Dec.
    • J. T. Blandford and J. C. Pickel, “Use of 252Cf to determine parameters for SEU rate calculation”, IEEE Trans. Nuc. Sci., vol. NS-32, p. 4282, Dec. 1985.
    • (1985) IEEE Trans. Nuc. Sci. , vol.NS-32 , pp. 4282
    • Blandford, J.T.1    Pickel, J.C.2
  • 49
    • 0023560373 scopus 로고
    • Laser simulation of single event upsets”
    • Dec.
    • S. P. Buchner et al., “Laser simulation of single event upsets”, IEEE Trans. Nuc. Sci., vol. NS-34, p. 1228, Dec. 1987.
    • (1987) IEEE Trans. Nuc. Sci. , vol.NS-34 , pp. 1228
    • Buchner, S.P.1
  • 50
    • 77957236349 scopus 로고
    • Simulation of heavy charged particle tracks using focused laser beams”
    • Dec.
    • A. K. Richter and I. Arimura, “Simulation of heavy charged particle tracks using focused laser beams”, IEEE Trans. Nuc. Sci., vol. NS-34, p. 1234, Dec. 1987.
    • (1987) IEEE Trans. Nuc. Sci. , vol.NS-34 , pp. 1234
    • Richter, A.K.1    Arimura, I.2
  • 51
    • 84937995134 scopus 로고
    • Cosmic ray induced errors in MOS devices”
    • Apr.
    • J. Pickel and J. T. Blandford, “Cosmic ray induced errors in MOS devices”, IEEE Trans. Nuc. Sci., vol. NS-27, no. 2, Apr. 1980.
    • (1980) IEEE Trans. Nuc. Sci. , vol.NS-27 , Issue.2
    • Pickel, J.1    Blandford, J.T.2
  • 52
    • 84886540130 scopus 로고
    • Calculation of cosmic ray induced single event upsets: Program CRUP, cosmic ray upset program”
    • oNRL Memorandum Rep. 5171, Sept.
    • P. Shapiro, “Calculation of cosmic ray induced single event upsets: Program CRUP, cosmic ray upset program”, oNRL Memorandum Rep. 5171, Sept. 1983.
    • (1983)
    • Shapiro, P.1
  • 53
    • 0003686640 scopus 로고
    • Cosmic ray effects on microelectronics, part IV”
    • oNRL Memorandum Rep. 5901, Dec.
    • J. R. Adams, “Cosmic ray effects on microelectronics, part IV”, oNRL Memorandum Rep. 5901, Dec. 1986.
    • (1986)
    • Adams, J.R.1
  • 54
    • 0020948470 scopus 로고
    • Suggested single event upset figure of merit”
    • Dec.
    • E. L. Petersen et al., “Suggested single event upset figure of merit”, IEEE Trans. Nuc. Sci., vol. NS-30, p. 4533, Dec. 1983.
    • (1983) IEEE Trans. Nuc. Sci. , vol.NS-30 , pp. 4533
    • Petersen, E.L.1
  • 55
    • 0020293786 scopus 로고
    • A comparison of radiation damage in transistors from 60Co gamma rays and 2.2 MeV electrons”
    • Dec.
    • D. K. Nichols, W. E. Price, and M. K. Gauthier, “A comparison of radiation damage in transistors from 60Co gamma rays and 2.2 MeV electrons”, IEEE Trans. Nuc. Sci., vol. NS-29, no. 6, p. 1970, Dec. 1982.
    • (1982) IEEE Trans. Nuc. Sci. , vol.NS-29 , Issue.6 , pp. 1970
    • Nichols, D.K.1    Price, W.E.2    Gauthier, M.K.3
  • 56
    • 72349094974 scopus 로고
    • Models for total dose degradation of linear integrated circuits”
    • Dec.
    • A. H. Johnston and R. E. Plaag, “Models for total dose degradation of linear integrated circuits”, IEEE Trans. Nuc. Sci., vol. NS-34, no. 6, p. 1474, Dec. 1987.
    • (1987) IEEE Trans. Nuc. Sci. , vol.NS-34 , Issue.6 , pp. 1474
    • Johnston, A.H.1    Plaag, R.E.2
  • 57
    • 0022189290 scopus 로고
    • Radiation hardness assurance for electronic parts: Accomplishments and plans”
    • Dec.
    • E. A. Wolicki et al., “Radiation hardness assurance for electronic parts: Accomplishments and plans”, IEEE Trans. Nuc. Sci., vol. NS-32, p. 4230, Dec. 1985.
    • (1985) IEEE Trans. Nuc. Sci. , vol.NS-32 , pp. 4230
    • Wolicki, E.A.1
  • 58
    • 0020304257 scopus 로고
    • Hardness assurance and overtesting”
    • Dec.
    • A. I. Namenson, “Hardness assurance and overtesting”, IEEE Trans. Nuc. Sci., vol. NS-29, p. 1821, Dec. 1982.
    • (1982) IEEE Trans. Nuc. Sci. , vol.NS-29 , pp. 1821
    • Namenson, A.I.1
  • 59
    • 84939331635 scopus 로고
    • A study of electronics radiation hardness assurance techniques”
    • oAFWL-TR-73-134, Air Force Weapons Lab., Kirtland AFB, NM, 3 vols. Jan.
    • I. Arimura et al., “A study of electronics radiation hardness assurance techniques”, oAFWL-TR-73-134, Air Force Weapons Lab., Kirtland AFB, NM, 3 vols. Jan. 1974.
    • (1974)
    • Arimura, I.1
  • 60
    • 84939337103 scopus 로고
    • Voyager electronic parts radiation program
    • O JPL Rep. 77-41, Sept.
    • A. G. Stanley, K. E. Martin, and W. E. Price, “Voyager electronic parts radiation program, o” JPL Rep. 77-41, Sept. 1977.
    • (1977)
    • Stanley, A.G.1    Martin, K.E.2    Price, W.E.3
  • 61
    • 84939057099 scopus 로고
    • Spacecraft hardness assurance program”
    • Dec.
    • H. B. O'Donnell et al., “Spacecraft hardness assurance program”, IEEE Trans. Nuc. Sci., vol. NS-33, p. 1359, Dec. 1986.
    • (1986) IEEE Trans. Nuc. Sci. , vol.NS-33 , pp. 1359
    • O'Donnell, H.B.1
  • 62
    • 0020252730 scopus 로고
    • Hardness assurance experience on the DSCS III spacecraft program”
    • Dec.
    • L. C. Jeffers et al., “Hardness assurance experience on the DSCS III spacecraft program”, IEEE Trans. Nuc. Sci., vol. NS-29, no. 6, p. 1838, Dec. 1982.
    • (1982) IEEE Trans. Nuc. Sci. , vol.NS-29 , Issue.6 , pp. 1838
    • Jeffers, L.C.1
  • 63
    • 0020878831 scopus 로고
    • Considerations for single event immune VLSI logic”
    • Dec.
    • S. E. Diehl et al., “Considerations for single event immune VLSI logic”, IEEE Trans. Nuc. Sci., vol. NS-30, no. 6, p. 4501, Dec. 1983.
    • (1983) IEEE Trans. Nuc. Sci. , vol.NS-30 , Issue.6 , pp. 4501
    • Diehl, S.E.1
  • 65
    • 11044230665 scopus 로고
    • Temperature and epi thickness dependence of the heavy ion induced latchup threshold for a CMOS/ EPI 16 K static RAM”
    • Dec.
    • L. S. Smith et al., “Temperature and epi thickness dependence of the heavy ion induced latchup threshold for a CMOS/ EPI 16 K static RAM”, IEEE Trans. Nuc. Sci., vol. NS-34, no. 6, p. 1800, Dec. 1987.
    • (1987) IEEE Trans. Nuc. Sci. , vol.NS-34 , Issue.6 , pp. 1800
    • Smith, L.S.1
  • 66
    • 84939375408 scopus 로고    scopus 로고
    • Private communication, Dr. B. L. Gregory.
    • Private communication, Dr. B. L. Gregory.
  • 67
    • 84939360188 scopus 로고
    • A 36 ns radiation hard 256 K x 1 SRAM”
    • presented at the IEEE NSREC, Portland, OR, July
    • L.C. AIchesky et al., “A 36 ns radiation hard 256 K x 1 SRAM”, presented at the IEEE NSREC, Portland, OR, July 1988.
    • (1988)
    • Aichesky, L.C.1
  • 68
    • 84939349595 scopus 로고
    • Generic qualification-a different approach”
    • Reliability, and Logistics Workshop, Aug.
    • C. G. Messenger, “Generic qualification-a different approach”, in Proc. 1987 VHSIC/VLSI Qualification, Reliability, and Logistics Workshop, vol. 1, Aug. 1987.
    • (1987) Proc. 1987 VHSIC/VLSI Qualification , vol.1
    • Messenger, C.G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.