Code: A novel MOVPE technique for the single stage growth of buried ridge double heterostructure lasers and waveguides

Journal of Crystal Growth

Volumn 93, Issue 1-4, 1988, Pages 820-824

  Scott, M D ^a   Riffat, J R ^a   Griffith, I ^a   Davies, J I ^a   Marshall, A C ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS--EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM COMPOUNDS--GROWTH; SEMICONDUCTOR DEVICES--HETEROJUNCTIONS; WAVEGUIDES, OPTICAL;

BURIED HETEROSTRUCTURE LASERS; COMPOUND AND ORIENTATION DEPENDENT EPITAXY;

LASERS, SEMICONDUCTOR;

EID: 0024104306     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(88)90625-2     Document Type: Article

References (15)

1. A novel technology for formation of a narrow active layer in buried heterostructure lasers by single-step MOCVD
2. Low loss GaAs optical waveguides grown by the metalorganic chemical vapor deposition method