Fabrication and photoluminescence properties of ZnTe and CdZnTe films by low pressure metalorganic chemical-vapour deposition

Journal of Crystal Growth

Volumn 93, Issue 1-4, 1988, Pages 667-672

  Ekawa, Mitsuru ^a   Kawakami, Yoichi ^a   Taguchi, Tsunemasa ^a   Hiraki, Akio ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS--EPITAXIAL GROWTH; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS;

CADMIUM ZINC TELLURIDE; DONOR-ACCEPTOR PAIRS; METALORGANIC CHEMICAL VAPOR DEPOSITION; ZINC TELLURIDE;

SEMICONDUCTING FILMS;

EID: 0024103952     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(88)90601-X     Document Type: Article

References (12)

1. Modeling of mechanical properties of II–VI materials
2. Effects influencing the structural integrity of semiconductors and their alloys
3. Molecular beam epitaxial growth and characterization of Cd1−xZnxTe, Hg1−xCdxTe, Hg1−xMnxTe, and Hg1−xZnxTe on GaAs(100)
4. Evaluation of interface defects and the effect of iodine impurity in low-resistivity metal-organic chemical vapor deposition-grown ZnS films on GaAs
5. Growth, and surface and interface characteristics of hetero-epitaxial ZnTe films by metalorganic chemical-vapour-deposition.
6. Stress-induced splitting of excitons due to exchange interaction in zinc telluride
7. Crystal Growth and Neutral-Acceptor Bound-Exciton Emission of ZnCdTe by THM with Te Solvent