-
2
-
-
0019679302
-
Proton-induced nuclear reactions in silicon”
-
references therein.
-
P. J. McNulty, G. E. Farrell, and W. P. Tucker, “Proton-induced nuclear reactions in silicon”, IEEE Trans. Nucl. Sci., vol. 28, p. 4007, 1981 and references therein.
-
(1981)
IEEE Trans. Nucl. Sci.
, vol.28
, pp. 4007
-
-
Mcnulty, P.J.1
Farrell, G.E.2
Tucker, W.P.3
-
3
-
-
0019679781
-
Soft errors due to protons in the radiation belt”
-
E. L. Petersen, “Soft errors due to protons in the radiation belt”, IEEE Trans. Nucl. Sci., vol. 28, p. 3981, 1981.
-
(1981)
IEEE Trans. Nucl. Sci.
, vol.28
, pp. 3981
-
-
Petersen, E.L.1
-
4
-
-
0037701407
-
Energy dependence of proton irradiation damage in silicon”
-
W. Rosenzweig, F. M. Smits, and W. L. Brown, “Energy dependence of proton irradiation damage in silicon”, J. Appl. Phys., vol. 35, p. 2707, 1964.
-
(1964)
J. Appl. Phys.
, vol.35
, pp. 2707
-
-
Rosenzweig, W.1
Smits, F.M.2
Brown, W.L.3
-
6
-
-
0015982447
-
Damage in silicon solar cells from 2 to 155 MeV protons”
-
CA’, Nov. 13-15
-
A. Meulenberg, Jr., and F.C. Treble, “Damage in silicon solar cells from 2 to 155 MeV protons”, in Conf. Record of the Tenth IEEE Photovoltaic Specialists Conf. ‘Palo Alto, CA’, pp. 359-365, Nov. 13-15, 1973.
-
(1973)
Conf. Record of the Tenth IEEE Photovoltaic Specialists Conf. ‘Palo Alto
, pp. 359-365
-
-
Meulenberg, A.1
Treble, F.C.2
-
7
-
-
0003966563
-
-
New York, NY: Wiley-lnterscience
-
V. A. J. van Lint, T. M. Flanagan, R. E. Leadon, J. A. Naber, and V. C. Rogers, Mechanisms of Radiation Effects in Electronic Materials. New York, NY: Wiley-lnterscience, 1980.
-
(1980)
Mechanisms of Radiation Effects in Electronic Materials
-
-
Van Lint, V.A.J.1
Flanagan, T.M.2
Leadon, R.E.3
Naber, J.A.4
Rogers, V.C.5
-
8
-
-
0022890049
-
Energy dependence of proton-induced displacement damage in silicon”
-
E. A. Burke, “Energy dependence of proton-induced displacement damage in silicon”, IEEE Trans. Nucl. Sci., vol. 33, p. 1276, 1986.
-
(1986)
IEEE Trans. Nucl. Sci.
, vol.33
, pp. 1276
-
-
Burke, E.A.1
-
9
-
-
77957089184
-
Permanent damage produced by single proton interactions in silicon devices”
-
J. R. Srour, R. A. Hartmann, and K. S. Kitazaki, “Permanent damage produced by single proton interactions in silicon devices”, IEEE Trans. Nucl. Sci., vol. 33, p. 1597, 1986.
-
(1986)
IEEE Trans. Nucl. Sci.
, vol.33
, pp. 1597
-
-
Srour, J.R.1
Hartmann, R.A.2
Kitazaki, K.S.3
-
10
-
-
0346097533
-
Proton range-energy tables, 1 keV-10 GeV”
-
J. F. Janni, “Proton range-energy tables, 1 keV-10 GeV”, Atomic Energy and Nuclear Data Tables, vol. 27, pp. 147–529, 1982.
-
(1982)
Atomic Energy and Nuclear Data Tables
, vol.27
, pp. 147-529
-
-
Janni, J.F.1
-
11
-
-
36149011802
-
Nuclear scattering of 40-and 95-MeV protons”
-
A. E. Glassgold and P. J. Kellogg, “Nuclear scattering of 40-and 95-MeV protons”, Phys. Rev., vol. 109, p. 1291, 1958.
-
(1958)
Phys. Rev.
, vol.109
, pp. 1291
-
-
Glassgold, A.E.1
Kellogg, P.J.2
-
12
-
-
4043117098
-
Diffusion elastique et inelastique des protons de 155 MeV sur 24Mg, 28Si, 32S et “Ca”
-
A. Willis et al., “Diffusion elastique et inelastique des protons de 155 MeV sur 24Mg, 28Si, 32S et “Ca”, Nucl. Phys., vol. A112, p. 417, 1968.
-
(1968)
Nucl. Phys.
, vol.A112
, pp. 417
-
-
Willis, A.1
-
13
-
-
1842847792
-
Additional stopping power and range tables for protons, mesons, and electrons”
-
NASA-SP Pub. 3036
-
M. J. Berger and S. M. Seltzer, “Additional stopping power and range tables for protons, mesons, and electrons”, NASA-SP Pub. 3036, 1966.
-
(1966)
-
-
Berger, M.J.1
Seltzer, S.M.2
-
15
-
-
0001486737
-
Displacement of atoms during irradiation”
-
New York, NY: Academic Press
-
F. Seitz and J. S. Koehler, “Displacement of atoms during irradiation”, in Solid State Physics, vol. 2. New York, NY: Academic Press, 1956, p. 305.
-
(1956)
Solid State Physics
, vol.2
, pp. 305
-
-
Seitz, F.1
Koehler, J.S.2
-
16
-
-
84939708636
-
Solar cell radiation handbook”
-
oJPL Publication 82-69, Nov. 1
-
H. Y. Tada, J. R. Carter, Jr., B. E. Anspaugh, and R. C. Downing, “Solar cell radiation handbook”, Third Edition, oJPL Publication 82-69, Nov. 1, 1982.
-
(1982)
Third Edition
-
-
Tada, H.Y.1
Carter, J.R.2
Anspaugh, B.E.3
Downing, R.C.4
-
17
-
-
0000827191
-
Range concepts and heavy ion ranges ‘notes on atomic collisions, II’”
-
J. Lindhard, M. Scharff, and H. E. Schiott, “Range concepts and heavy ion ranges ‘notes on atomic collisions, II’”, Mat. Fys. Medd. Dan. Vid. Selsk., vol. 33, no. 14, pp. 1–42, 1963.
-
(1963)
Mat. Fys. Medd. Dan. Vid. Selsk.
, vol.33
, Issue.14
, pp. 1-42
-
-
Lindhard, J.1
Scharff, M.2
Schiott, H.E.3
-
18
-
-
0004195831
-
-
For a description of the Lindhard model, see, New York, NY: Academic Press
-
For a description of the Lindhard model, see J. W. Mayer, L. Eriksson, and J. A. Davies, Ion Implantation in Semiconductors. New York, NY: Academic Press, 1970.
-
(1970)
Ion Implantation in Semiconductors
-
-
Mayer, J.W.1
Eriksson, L.2
Davies, J.A.3
-
19
-
-
0004101812
-
-
Springer Series in Solid State Sciences, edited by M. Cardona, P. Fulde, and H.’. Queisser. New York, NY: SpringerVerlag, 239.
-
J. Bourgoin and M. Lannoo, Point Defects in Semiconductors II: Experimental Aspects, Springer Series in Solid State Sciences, Vol. 35, edited by M. Cardona, P. Fulde, and H.’. Queisser. New York, NY: SpringerVerlag, 1983, pp. 228, 239.
-
(1983)
Point Defects in Semiconductors II: Experimental Aspects
, vol.35
, pp. 228
-
-
Bourgoin, J.1
Lannoo, M.2
-
21
-
-
0019279984
-
Transient and permanent effects of neutron bombardment on a commercially available N-buried-channel CCD”
-
J. R. Srour, R. A. Hartmann, and S. Othmer, “Transient and permanent effects of neutron bombardment on a commercially available N-buried-channel CCD”, IEEE Trans. Nucl. Sci., vol. 27, p. 1402, 1980.
-
(1980)
IEEE Trans. Nucl. Sci.
, vol.27
, pp. 1402
-
-
Srour, J.R.1
Hartmann, R.A.2
Othmer, S.3
-
22
-
-
0014924545
-
Short-term annealing in electron-irradiated p-type silicon”
-
Dec.; see also “Comment on 'short-term anneal of 30-MeV electron damage in high-purity n-type silicon'”, IEEE Trans. Nucl. Sci., vol. 19, p. !!897, Feb. 1972.
-
J. R. Srour, “Short-term annealing in electron-irradiated p-type silicon”, IEEE Trans. Nucl. Sci., vol. 17, p. 118, Dec. 1970; see also “Comment on 'short-term anneal of 30-MeV electron damage in high-purity n-type silicon'”, IEEE Trans. Nucl. Sci., vol. 19, p. !!897, Feb. 1972.
-
(1970)
IEEE Trans. Nucl. Sci.
, vol.17
, pp. 118
-
-
Srour, J.R.1
-
23
-
-
0000084815
-
A new mechanism for interstitial migration”
-
J. C. Bourgoin and J. W. Corbett, “A new mechanism for interstitial migration”, Phys. Lett., vol. 38A, p. 135, 1972.
-
(1972)
Phys. Lett.
, vol.38A
, pp. 135
-
-
Bourgoin, J.C.1
Corbett, J.W.2
-
24
-
-
0000264412
-
Observation of recombination-enhanced defect reactions in semiconductors”
-
D. V. Lang and L. C. Kimerling, “Observation of recombination-enhanced defect reactions in semiconductors”, Phys. Rev. Lett., vol. 33, p. 489, 1974.
-
(1974)
Phys. Rev. Lett.
, vol.33
, pp. 489
-
-
Lang, D.V.1
Kimerling, L.C.2
-
25
-
-
0019686972
-
Lonization-enhanced processes in semiconductors”
-
For a review, see,; also, see D. V. Lang, in Annual Review of Materials Science, vol. 12, R. A. Huggins, R. H. Bube,and D. A. Vermilyea, Eds. Palo Alto, CA: Annual Reviews, Inc., 1982, pp. 377–400.
-
For a review, see M. I. Klinger and T. V. Mashovets, “Lonization-enhanced processes in semiconductors”, Crystal Lattice Defects, vol. 9, p. 113, 1981; also, see D. V. Lang, in Annual Review of Materials Science, vol. 12, R. A. Huggins, R. H. Bube,and D. A. Vermilyea, Eds. Palo Alto, CA: Annual Reviews, Inc., 1982, pp. 377–400.
-
(1981)
Crystal Lattice Defects
, vol.9
, pp. 113
-
-
Klinger, M.I.1
Mashovets, T.V.2
-
26
-
-
0015434101
-
J. Appl. Phys.
-
O. L. Curtis, Jr., J. R. Srour,and R. B. Rauch”, Recombination studies on gamma-irradiated n-type silicon”, J. Appl. Phys., vol. 43, p. 4638, 1972.
-
(1972)
Recombination studies on gamma-irradiated n-type silicon”
, vol.43
, pp. 4638
-
-
Curtis, O.L.1
Srour, J.R.2
Rauch, R.B.3
-
27
-
-
36849125657
-
Explanation for the discrepancy in recombination level positions in irradiated n-type Ge reported by various observers”
-
O. L. Curtis, Jr., “Explanation for the discrepancy in recombination level positions in irradiated n-type Ge reported by various observers”, J. Appl. Phys., vol. 36, p. 2094, 1965.
-
(1965)
J. Appl. Phys.
, vol.36
, pp. 2094
-
-
Curtis, O.L.1
-
28
-
-
0004093089
-
-
For a description, see, New York, NY: Pergamon Press
-
For a description, see J. S. Blakemore, Semiconductor Statistics. New York, NY: Pergamon Press, 1962.
-
(1962)
Semiconductor Statistics
-
-
Blakemore, J.S.1
-
29
-
-
1242309535
-
Electron and proton damage coefficients in low-resistivity silicon”
-
J. R. Srour, S. Othmer, and K. Y. Chiu, “Electron and proton damage coefficients in low-resistivity silicon”, IEEE Trans. Nucl. Sci., vol. 22, p. 2656, 1975.
-
(1975)
IEEE Trans. Nucl. Sci.
, vol.22
, pp. 2656
-
-
Srour, J.R.1
Othmer, S.2
Chiu, K.Y.3
-
30
-
-
0011257072
-
Correlation of displacement effects produced by electrons, protons and neutrons in silicon”
-
V. A. J. van Lint, G. Gigas, and J. Barengoltz, “Correlation of displacement effects produced by electrons, protons and neutrons in silicon”, IEEE Trans. Nucl. Sci., vol. 22, p. 2663, 1975.
-
(1975)
IEEE Trans. Nucl. Sci.
, vol.22
, pp. 2663
-
-
Van Lint, V.A.J.1
Gigas, G.2
Barengoltz, J.3
-
31
-
-
0023594012
-
Correlation of particle-induced displacement damage in silicon”
-
G. P. Summers et al., “Correlation of particle-induced displacement damage in silicon”, IEEE Trans. Nucl. Sci., vol. 34, p. 1134, 1987.
-
(1987)
IEEE Trans. Nucl. Sci.
, vol.34
, pp. 1134
-
-
Summers, G.P.1
-
32
-
-
84939344554
-
MOS Physics and Technology
-
oSecond Edition. New York, NY: Wiley, 1981; E. H. Nicollian and J. R. Brews,. New York, NY: Wiley
-
S. M. Sze, Physics of Semiconductor Devices, oSecond Edition. New York, NY: Wiley, 1981; E. H. Nicollian and J. R. Brews, MOS Physics and Technology. New York, NY: Wiley, 1982.
-
(1982)
Physics of Semiconductor Devices
-
-
Sze, S.M.1
-
33
-
-
84963593424
-
Zur theorie der ionisation in kilonnen”
-
G. Jaffe, “Zur theorie der ionisation in kilonnen”, Ann. Phys. ‘Leipzig’, vol. 42, p. 303, 1913.
-
(1913)
Ann. Phys. ‘Leipzig’
, vol.42
, pp. 303
-
-
Jaffe, G.1
-
34
-
-
36149016302
-
Initial recombination of ions”
-
L. Onsager, “Initial recombination of ions”, Phys. Rev., vol. 54, p. 554, 1938.
-
(1938)
Phys. Rev.
, vol.54
, pp. 554
-
-
Onsager, L.1
-
35
-
-
0019701394
-
Ionization of Si02 by heavy charged particles”
-
“Comparison of 60Co response and 10 keV X-ray response in MOS capacitors”, vol. NS-30, p. !!4377, 1983.
-
T. R. Oldham and J. M. McGarrity, “Ionization of Si02 by heavy charged particles”, IEEE Trans. Nucl. Sci., vol. NS-28, p. 3975, 1981; “Comparison of 60Co response and 10 keV X-ray response in MOS capacitors”, vol. NS-30, p. !!4377, 1983.
-
(1981)
IEEE Trans. Nucl. Sci.
, vol.NS-28
, pp. 3975
-
-
Oldham, T.R.1
Mcgarrity, J.M.2
-
36
-
-
0003211727
-
Chargetransport studies in Si02: processing effects and implications for radiation hardening”
-
Dec.
-
J.R. Srour, O. L. Curtis, Jr., and K.Y. Chiu, “Chargetransport studies in Si02: processing effects and implications for radiation hardening”, IEEE Trans. Nucl. Sci., vol. NS-21, p. 73, Dec. 1974.
-
(1974)
IEEE Trans. Nucl. Sci.
, vol.NS-21
, pp. 73
-
-
Srour, J.R.1
Curtis, O.L.2
Chiu, K.Y.3
-
37
-
-
0012506276
-
Unified model of damage annealing in CMOS from freeze-in to transient annealing”
-
H. H. Sander and B. L. Gregory, “Unified model of damage annealing in CMOS from freeze-in to transient annealing”, IEEE Trans. Nucl. Sci., vol. NS-22, p. 2157, 1975.
-
(1975)
IEEE Trans. Nucl. Sci.
, vol.NS-22
, pp. 2157
-
-
Sander, H.H.1
Gregory, B.L.2
-
38
-
-
0017216943
-
Chargeyield and dose effects in MOS capacitors at 80 K”
-
H. E. Boesch, Jr., and J. M. McCarrity, “Chargeyield and dose effects in MOS capacitors at 80 K”, IEEE Trans. Nucl. Sci., vol. NS-23, p. 1520, 1976.
-
(1976)
IEEE Trans. Nucl. Sci.
, vol.NS-23
, pp. 1520
-
-
Boesch, H.E.1
Mccarrity, J.M.2
-
39
-
-
0000599112
-
Electron-hole pair creation energy in Si02”
-
G. A. Ausman, Jr.,and F. B. McLean, “Electron-hole pair creation energy in Si02”, Appl. Phys. Lett., vol. 26, p. 173, 1975.
-
(1975)
Appl. Phys. Lett.
, vol.26
, pp. 173
-
-
Ausman, G.A.1
Mclean, F.B.2
-
40
-
-
0022865689
-
The relationship between 60Co and 10 keV X-ray damage in MOS devices”
-
J. M. Benedetto and H. E. Boesch, Jr., “The relationship between 60Co and 10 keV X-ray damage in MOS devices”, IEEE Trans. Nucl. Sci., vol. NS-33, p. 1318, 1986.
-
(1986)
IEEE Trans. Nucl. Sci.
, vol.NS-33
, pp. 1318
-
-
Benedetto, J.M.1
Boesch, H.E.2
-
41
-
-
84909939176
-
Electron transport in Si02 films at low temperatures”
-
G. Lucovsky, S. T. Pantelides, and F. L. Galeener, Eds. New York, NY: Pergamon Press
-
S. Othmer and J. R. Srour, “Electron transport in Si02 films at low temperatures”, in The Physics of MOS Insulators, G. Lucovsky, S. T. Pantelides, and F. L. Galeener, Eds. New York, NY: Pergamon Press, 1980, p. 49.
-
(1980)
The Physics of MOS Insulators
, pp. 49
-
-
Othmer, S.1
Srour, J.R.2
-
42
-
-
0016942339
-
Application of stochastic hopping transport to hole conduction in amorphous Si02”
-
F. B. McLean, H. E. Boesch, Jr., and J. M. McGarrity, “Hole transport and recovery characteristics of Si02 gate insulators”, IEEE Trans. Nucl. Sci., vol. NS-23, p. !!1506, 1976.
-
F. B. McLean, G. A. Ausman, Jr., H. E. Boesch, Jr., and J. M. McGarrity, “Application of stochastic hopping transport to hole conduction in amorphous Si02”, J. Appl. Phys., vol. 47, p. 1529, 1976; F. B. McLean, H. E. Boesch, Jr., and J. M. McGarrity, “Hole transport and recovery characteristics of Si02 gate insulators”, IEEE Trans. Nucl. Sci., vol. NS-23, p. !!1506, 1976.
-
(1976)
J. Appl. Phys.
, vol.47
, pp. 1529
-
-
Mclean, F.B.1
Ausman, G.A.2
Boesch, H.E.3
Mcgarrity, J.M.4
-
43
-
-
84909761672
-
Hole transport in MOS oxides”
-
R. C. Hughes, E. P. EerNisse, and H. J. Stein, “Hole transport in MOS oxides”, IEEE Trans. Nucl. Sci., vol. NS-22, p. 2227, 1975.
-
(1975)
IEEE Trans. Nucl. Sci.
, vol.NS-22
, pp. 2227
-
-
Hughes, R.C.1
Eernisse, E.P.2
Stein, H.J.3
-
44
-
-
0017532049
-
The multiple-trapping model and hole trapping in Si02”
-
O. L. Curtis, Jr., and J.R. Srour, “The multiple-trapping model and hole trapping in Si02”, J. Appl. Phys., vol. 48, p. 3819, 1977.
-
(1977)
J. Appl. Phys.
, vol.48
, pp. 3819
-
-
Curtis, O.L.1
Srour, J.R.2
-
45
-
-
84938002290
-
Hole transport and charge relaxation in irradiated Si02 MOS capacitors”
-
H. E. Boesch, Jr., F. B. McLean, J. M. McGarrity, and G. A. Ausman, Jr., “Hole transport and charge relaxation in irradiated Si02 MOS capacitors”, IEEE Trans. Nucl. Sci., vol. NS-22, p. 2163, 1975.
-
(1975)
IEEE Trans. Nucl. Sci.
, vol.NS-22
, pp. 2163
-
-
Boesch, H.E.1
Mclean, F.B.2
Mcgarrity, J.M.3
Ausman, G.A.4
-
46
-
-
0018158325
-
Enhanced flatband voltage recovery in hardened thin MOS capacitors”
-
H. E. Boesch, Jr., F. B. McLean, J. M. McGarrity, and P. S. Winokur, “Enhanced flatband voltage recovery in hardened thin MOS capacitors”, IEEE Trans. Nucl. Sci., vol. NS-25, p. 1239, 1978.
-
(1978)
IEEE Trans. Nucl. Sci.
, vol.NS-25
, pp. 1239
-
-
Boesch, H.E.1
Mclean, F.B.2
Mcgarrity, J.M.3
Winokur, P.S.4
-
47
-
-
0022865241
-
Spatial dependence of trapped holes determined from tunneling analysis and measured annealing”
-
T. R. Oldham, A. J. Lelis, and F. B. McLean, “Spatial dependence of trapped holes determined from tunneling analysis and measured annealing”, IEEE Trans. Nucl. Sci., vol. NS-33, p. 1203, 1986.
-
(1986)
IEEE Trans. Nucl. Sci.
, vol.NS-33
, pp. 1203
-
-
Oldham, T.R.1
Lelis, A.J.2
Mclean, F.B.3
-
48
-
-
0021605304
-
Correlating the radiation response of MOS capacitors and transistors”
-
P. S. Winokur, J. R. Schwank, P. J. McWhorter, P. V. Dressendorfer, and D. C. Turpin, “Correlating the radiation response of MOS capacitors and transistors”, IEEE Trans. Nucl. Sci., vol. NS-31, p. 1453, 1984.
-
(1984)
IEEE Trans. Nucl. Sci.
, vol.NS-31
, pp. 1453
-
-
Winokur, P.S.1
Schwank, J.R.2
Mcwhorter, P.J.3
Dressendorfer, P.V.4
Turpin, D.C.5
-
49
-
-
0007168199
-
Critical evaluation of the midgap-voltage-shift method for determining oxide trapped charge in irradiated MOS devices”
-
Z. Shanfield and M. M. Moriwaki, “Critical evaluation of the midgap-voltage-shift method for determining oxide trapped charge in irradiated MOS devices”, IEEE Trans. Nucl. Sci., vol. NS-34, p. 1159, 1987.
-
(1987)
IEEE Trans. Nucl. Sci.
, vol.NS-34
, pp. 1159
-
-
Shanfield, Z.1
Moriwaki, M.M.2
-
50
-
-
0020910298
-
Microstructural variations in radiation hard and soft oxides observed through electron spin resonance”
-
P. M. Lenahan and P. V. Dressendorfer, “Microstructural variations in radiation hard and soft oxides observed through electron spin resonance”, IEEE Trans. Nucl. Sci., vol. NS-30, p. 4602, 1983.
-
(1983)
IEEE Trans. Nucl. Sci.
, vol.NS-30
, pp. 4602
-
-
Lenahan, P.M.1
Dressendorfer, P.V.2
-
51
-
-
0001399549
-
Process optimization of radiation-hardened CMOS integrated circuits”
-
G. F. Derbenwick and B. L. Gregory, “Process optimization of radiation-hardened CMOS integrated circuits”, IEEE Trans. Nucl. Sci., vol. NS-22, p. 2151, 1975.
-
(1975)
IEEE Trans. Nucl. Sci.
, vol.NS-22
, pp. 2151
-
-
Derbenwick, G.F.1
Gregory, B.L.2
-
52
-
-
0020900953
-
Radiation-induced interface states of poly-Si gate MOS capacitors using low temperature gate oxidation”
-
K. Naruke, M. Yoshida, K. Maeguchi, and H. Tango, “Radiation-induced interface states of poly-Si gate MOS capacitors using low temperature gate oxidation”, IEEE Trans. Nucl. Sci., vol. NS-30, p. 4054, 1983.
-
(1983)
IEEE Trans. Nucl. Sci.
, vol.NS-30
, pp. 4054
-
-
Naruke, K.1
Yoshida, M.2
Maeguchi, K.3
Tango, H.4
-
53
-
-
0022231768
-
Optimizing and controlling the radiation hardness of Si-gate CMOS process”
-
P. S. Winokur, E. B. Errett, D. M. Fleetwood, P. V. Dressendorfer, and D. C. Turpin, “Optimizing and controlling the radiation hardness of Si-gate CMOS process”, IEEE Trans. Nucl. Sci., vol. NS-32, p. 3954, 1985.
-
(1985)
IEEE Trans. Nucl. Sci.
, vol.NS-32
, pp. 3954
-
-
Winokur, P.S.1
Errett, E.B.2
Fleetwood, D.M.3
Dressendorfer, P.V.4
Turpin, D.C.5
-
54
-
-
0002142497
-
Comparison of interface-state generation by 25 keV electron beam irradiation in p-type and n-type MOS capacitors”
-
T. P. Ma, G. Scoggan, and R. L. Leone, “Comparison of interface-state generation by 25 keV electron beam irradiation in p-type and n-type MOS capacitors”, Appl. Phys. Lett., vol. 27, p. 61, 1975.
-
(1975)
Appl. Phys. Lett.
, vol.27
, pp. 61
-
-
Ma, T.P.1
Scoggan, G.2
Leone, R.L.3
-
55
-
-
0021378416
-
Relationship between MOSFET degradation and hot electron induced interface state generation”
-
F. C. Hsu and T. S. Tarn, “Relationship between MOSFET degradation and hot electron induced interface state generation”, IEEE Elec. Device Lett., vol. EDL-5, p. 50, 1984.
-
(1984)
IEEE Elec. Device Lett.
, vol.EDL-5
, pp. 50
-
-
Hsu, F.C.1
Tarn, T.S.2
-
56
-
-
0017741211
-
Field and time-dependent radiation effects at the Si02/Si interface of hardened MOS capacitors”
-
P. S. Winokur, H. E. Boesch, Jr., J. M. McGarrity, and F. B. McLean, “Field and time-dependent radiation effects at the Si02/Si interface of hardened MOS capacitors”, IEEE Trans. Nucl. Sci., vol. NS-24, p. 2113, 1977.
-
(1977)
IEEE Trans. Nucl. Sci.
, vol.NS-24
, pp. 2113
-
-
Winokur, P.S.1
Boesch, H.E.2
Mcgarrity, J.M.3
Mclean, F.B.4
-
57
-
-
0018468948
-
Two-stage process for buildup of radiation induced interface states”
-
P. S. Winokur, H. E. Boesch, Jr., J. M. McGarrity, and F. B. McLean, “Two-stage process for buildup of radiation induced interface states”, J. Appl. Phys., vol. 50, p. 3492, 1979.
-
(1979)
J. Appl. Phys.
, vol.50
, pp. 3492
-
-
Winokur, P.S.1
Boesch, H.E.2
Mcgarrity, J.M.3
Mclean, F.B.4
-
58
-
-
0019242095
-
A framework for understanding radiation-induced interface states in Si02 MOS structures”
-
F. B. McLean, “A framework for understanding radiation-induced interface states in Si02 MOS structures”, IEEE Trans. Nucl. Sci., vol. NS-27, p. 1651, 1980.
-
(1980)
IEEE Trans. Nucl. Sci.
, vol.NS-27
, pp. 1651
-
-
Mclean, F.B.1
-
59
-
-
0346840948
-
Diffusion of radiolytic molecular hydrogen as a mechanism for Postirradiation buildup of interface states in Si02 on Si structures”
-
D. L. Griscom, “Diffusion of radiolytic molecular hydrogen as a mechanism for Postirradiation buildup of interface states in Si02 on Si structures”, J. Appl. Phys., vol. 58, p. 2524, 1985.
-
(1985)
J. Appl. Phys.
, vol.58
, pp. 2524
-
-
Griscom, D.L.1
-
60
-
-
0022231767
-
The time dependence of interface state production”
-
D. B. Brown, “The time dependence of interface state production”, IEEE Trans. Nucl. Sci., vol. NS-32, p. 3900, 1985.
-
(1985)
IEEE Trans. Nucl. Sci.
, vol.NS-32
, pp. 3900
-
-
Brown, D.B.1
-
61
-
-
0020246677
-
Radiation-induced defects in Si02 as determined with XPS”
-
F. J. Grunthaner, P. J. Grunthaner, and J. Maserjian, “Radiation-induced defects in Si02 as determined with XPS”, IEEE Trans. Nucl. Sci., vol. NS-29, p. 1462, 1982.
-
(1982)
IEEE Trans. Nucl. Sci.
, vol.NS-29
, pp. 1462
-
-
Grunthaner, F.J.1
Grunthaner, P.J.2
Maserjian, J.3
-
62
-
-
0020298454
-
Interface-state generation in thick Si02 layers”
-
H. E. Boesch, Jr., “Interface-state generation in thick Si02 layers”, IEEE Trans. Nucl. Sci., vol. NS-29, p. 1446, 1982.
-
(1982)
IEEE Trans. Nucl. Sci.
, vol.NS-29
, pp. 1446
-
-
Boesch, H.E.1
-
63
-
-
84911439162
-
Radiation-induced interface-state generation in MOS devices”
-
J. R. Schwank et al., “Radiation-induced interface-state generation in MOS devices”, IEEE Trans. Nucl. Sci., vol. NS-33, p. 1178, 1986.
-
(1986)
IEEE Trans. Nucl. Sci.
, vol.NS-33
, pp. 1178
-
-
Schwank, J.R.1
-
64
-
-
0021427238
-
Hole traps and trIValent silicon centers in metal/oxide/silicon devices”
-
P. M. Lenahan and P. V. Dressendorfer, “Hole traps and trIValent silicon centers in metal/oxide/silicon devices”, J. Appl. Phys., vol. 55, p. 3495, 1984.
-
(1984)
J. Appl. Phys.
, vol.55
, pp. 3495
-
-
Lenahan, P.M.1
Dressendorfer, P.V.2
-
65
-
-
84939068629
-
Generation of interface states by ionizing radiation in very thin MOS oxides”
-
N. S. Saks, M. G. Ancona, and J. A. Modolo, “Generation of interface states by ionizing radiation in very thin MOS oxides”, IEEE Trans. Nucl. Sci., vol. NS-33, p. 1185, 1986.
-
(1986)
IEEE Trans. Nucl. Sci.
, vol.NS-33
, pp. 1185
-
-
Saks, N.S.1
Ancona, M.G.2
Modolo, J.A.3
-
66
-
-
0020918475
-
Tunneling discharge of trapped holes in silicon dioxide”
-
oJ.F. Verweis and D. R.Wolters, Eds. New York, NY: North-Holland
-
S. Manzini and A. Modelli, “Tunneling discharge of trapped holes in silicon dioxide”, in Insulating Films on Semiconductors, oJ.F. Verweis and D. R.Wolters, Eds. New York, NY: North-Holland, 1983, p. 112.
-
(1983)
Insulating Films on Semiconductors
, pp. 112
-
-
Manzini, S.1
Modelli, A.2
-
67
-
-
0016482763
-
Low temperature irradiation effects in Si02-insulated MIS devices”
-
E. Harari, S. Wang, and B. S. H. Royce, “Low temperature irradiation effects in Si02-insulated MIS devices”, J. Appl. Phys., vol. 46, p. 1310, 1975.
-
(1975)
J. Appl. Phys.
, vol.46
, pp. 1310
-
-
Harari, E.1
Wang, S.2
Royce, B.S.H.3
-
68
-
-
0017638751
-
CMOS hardness prediction for low dose rate environments”
-
G. F. Derbenwick and H. H. Sander, “CMOS hardness prediction for low dose rate environments”, IEEE Trans. Nucl. Sci., vol. NS-24, p. 2244, 1977.
-
(1977)
IEEE Trans. Nucl. Sci.
, vol.NS-24
, pp. 2244
-
-
Derbenwick, G.F.1
Sander, H.H.2
-
69
-
-
0020252133
-
Limitations in the use of linear system theory for the prediction of hardened MOS device response in space satellite environments”
-
P. S. Winokur, “Limitations in the use of linear system theory for the prediction of hardened MOS device response in space satellite environments”, /–-Trans. Nucl. Sci., vol. NS-29, p. 2102, 1982.
-
(1982)
/–-Trans. Nucl. Sci.
, vol.NS-29
, pp. 2102
-
-
Winokur, P.S.1
-
70
-
-
0020882907
-
I rradiated silicon gate MOS device bias annealing”
-
J. R. Schwank and W. R. Dawes, “I rradiated silicon gate MOS device bias annealing”, /–-Trans. Nucl. Sci., vol. NS-30, p. 4100, 1983.
-
(1983)
/–-Trans. Nucl. Sci.
, vol.NS-30
, pp. 4100
-
-
Schwank, J.R.1
Dawes, W.R.2
-
71
-
-
0021587257
-
Physical mechanisms contributing to device 'rebound'”
-
J. R. Schwank et al., “Physical mechanisms contributing to device 'rebound'”, IEEE Trans. Nucl. Sci., vol. NS-31, p. 1434, 1984.
-
(1984)
IEEE Trans. Nucl. Sci.
, vol.NS-31
, pp. 1434
-
-
Schwank, J.R.1
-
72
-
-
0021609581
-
Super recovery of total dose damage in MOS devices”
-
A. H. Johnston, “Super recovery of total dose damage in MOS devices”, IEEE Trans. Nucl. Sci., vol. NS-31, p. 1427, 1984.
-
(1984)
IEEE Trans. Nucl. Sci.
, vol.NS-31
, pp. 1427
-
-
Johnston, A.H.1
-
73
-
-
0018454996
-
Device designs and characteristics for high performance logic applications”
-
R. H. Dennard, F. H. Caensslin, E. J. Walker, and P. W. Cook, “Device designs and characteristics for high performance logic applications”, IEEE Trans. Electron Devices, vol. ED-26, p. 325, 1979.
-
(1979)
IEEE Trans. Electron Devices
, vol.ED-26
, pp. 325
-
-
Dennard, R.H.1
Caensslin, F.H.2
Walker, E.J.3
Cook, P.W.4
-
74
-
-
3743153188
-
Total dose failure mechanisms of integrated circuits in laboratory and space environments”
-
P. S. Winokur, F. W. Sexton, G. L. Hash, and D. C. Turpin, “Total dose failure mechanisms of integrated circuits in laboratory and space environments”, IEEE Trans. Nucl. Sci., vol. NS-34, p. 1448, 1987.
-
(1987)
IEEE Trans. Nucl. Sci.
, vol.NS-34
, pp. 1448
-
-
Winokur, P.S.1
Sexton, F.W.2
Hash, G.L.3
Turpin, D.C.4
-
75
-
-
0023593395
-
Post irradiation effects in field oxide isolation structures”
-
T. R. Oldham et al., “Post irradiation effects in field oxide isolation structures”, IEEE Trans. Nucl. Sci., vol. NS-34, p. 1184, 1987.
-
(1987)
IEEE Trans. Nucl. Sci.
, vol.NS-34
, pp. 1184
-
-
Oldham, T.R.1
-
76
-
-
0020900961
-
Total dose effects in recessed oxide digital bipolar microcircuits”
-
R. L. Pease, R. M. Turfler, D. Platteter, D. Emily, and R. Blice, “Total dose effects in recessed oxide digital bipolar microcircuits”, IEEE Trans. Nucl. Sci., vol. NS-30, p. 4216, 1983.
-
(1983)
IEEE Trans. Nucl. Sci.
, vol.NS-30
, pp. 4216
-
-
Pease, R.L.1
Turfler, R.M.2
Platteter, D.3
Emily, D.4
Blice, R.5
-
77
-
-
84939053099
-
Minimum size and maximum packing density of nonredundant semiconductor devices”
-
Mar.
-
J. T. Wallmark and S. M. Marcus, “Minimum size and maximum packing density of nonredundant semiconductor devices”, Proc. IRE, pp. 286-298, Mar. 1962.
-
(1962)
Proc. IRE
, pp. 286-298
-
-
Wallmark, J.T.1
Marcus, S.M.2
-
78
-
-
84904466214
-
Satellite anomalies from galactic cosmic rays”
-
D. Binder, E. C. Smith, and A. B. Holman, “Satellite anomalies from galactic cosmic rays”, IEEE Trans. Nucl. Sci., vol. 22, p. 2675, 1975.
-
(1975)
IEEE Trans. Nucl. Sci.
, vol.22
, pp. 2675
-
-
Binder, D.1
Smith, E.C.2
Holman, A.B.3
-
79
-
-
0018157170
-
Cosmic ray induced errors in MOS memory cells”
-
J. C. Pickel and J. T. Blandford, Jr., “Cosmic ray induced errors in MOS memory cells”, IEEE Trans. Nucl. Sci., vol. 25, p. 1166, 1978.
-
(1978)
IEEE Trans. Nucl. Sci.
, vol.25
, pp. 1166
-
-
Pickel, J.C.1
Blandford, J.T.2
-
80
-
-
0018331014
-
Alpha-particle-induced soft errors in dynamic memories”
-
T. C. May and M. H. Woods, “Alpha-particle-induced soft errors in dynamic memories”, IEEE Trans. Electron Devices., vol. 26, p. 2, 1979.
-
(1979)
IEEE Trans. Electron Devices.
, vol.26
, pp. 2
-
-
May, T.C.1
Woods, M.H.2
-
81
-
-
0020904492
-
Measurements of alpha-particle-induced charge in GaAs devices”
-
M. A. Hopkins and J. R. Srour, “Measurements of alpha-particle-induced charge in GaAs devices”, IEEE Trans. Nucl. Sci., vol. 30, p. 4457, 1983.
-
(1983)
IEEE Trans. Nucl. Sci.
, vol.30
, pp. 4457
-
-
Hopkins, M.A.1
Srour, J.R.2
-
82
-
-
0019551234
-
A field-fun-neling effect on the collection of alpha-generated carriers in silicon devices”
-
C. M. Hsieh, P. C. Murley, and R. R. O'Brien, “A field-fun-neling effect on the collection of alpha-generated carriers in silicon devices”, IEEE Electron Device Lett., vol. EDL-2, p. 103, 1981.
-
(1981)
IEEE Electron Device Lett.
, vol.EDL-2
, pp. 103
-
-
Hsieh, C.M.1
Murley, P.C.2
O'Brien, R.R.3
-
83
-
-
0019707564
-
Dynamics of charge collection from alpha-particle tracks in integrated circuits”
-
FL’, Apr.
-
C. M. Hsieh, P. C. Murley, and R. R. O'Brien, “Dynamics of charge collection from alpha-particle tracks in integrated circuits”, in Proc. 19th Annual IEEE Intl. Reliability Physics Symp. ‘Orlando, FL’, p. 38, Apr. 1981.
-
(1981)
Proc. 19th Annual IEEE Intl. Reliability Physics Symp. ‘Orlando
, pp. 38
-
-
Hsieh, C.M.1
Murley, P.C.2
O'Brien, R.R.3
-
84
-
-
0020312672
-
Charge tunneling in n-and p-type Si substrates”
-
T. R.Oldham
-
F. B. McLean and T. R.Oldham, “Charge tunneling in n-and p-type Si substrates”, IEEE Trans. Nucl. Sci., vol. 29, p. 2018, 1982.
-
(1982)
IEEE Trans. Nucl. Sci.
, vol.29
, pp. 2018
-
-
Mclean, F.B.1
-
85
-
-
0020298427
-
Collection of charge on junction nodes from ion tracks”
-
C. C. Messenger, “Collection of charge on junction nodes from ion tracks”, IEEE Trans. Nucl. Sci., vol. 29, p. 2024, 1982.
-
(1982)
IEEE Trans. Nucl. Sci.
, vol.29
, pp. 2024
-
-
Messenger, C.C.1
-
86
-
-
0020091827
-
Alpha-particle-induced field and enhanced collection of carriers”
-
C. Hu, “Alpha-particle-induced field and enhanced collection of carriers”, IEEE Electron Device Lett., vol. EDL-3, p. 31, 1982.
-
(1982)
IEEE Electron Device Lett.
, vol.EDL-3
, pp. 31
-
-
Hu, C.1
-
87
-
-
0020765547
-
Collection of charge from alpha-particle tracks in silicon devices”
-
C. M. Hsieh, P. C. Murley, and R. R. O'Brien, “Collection of charge from alpha-particle tracks in silicon devices”, IEEE Trans. Electron Devices, vol. 30, p. 686, 1983.
-
(1983)
IEEE Trans. Electron Devices
, vol.30
, pp. 686
-
-
Hsieh, C.M.1
Murley, P.C.2
O'Brien, R.R.3
-
88
-
-
0020952139
-
Charge collection measurements for heavy ions incident on n-and p-type silicon”
-
T. R. Oldham and F. B. McLean, “Charge collection measurements for heavy ions incident on n-and p-type silicon”, IEEE Trans. Nucl. Sci., vol. 30, p. 4493, 1983.
-
(1983)
IEEE Trans. Nucl. Sci.
, vol.30
, pp. 4493
-
-
Oldham, T.R.1
Mclean, F.B.2
-
89
-
-
0021582516
-
Numerical studies of charge collection and tunneling in silicon device”
-
H. L. Grubin, J. P. Kreskovsky, and B. C. Weinberg, “Numerical studies of charge collection and tunneling in silicon device”, IEEE Trans. Nucl. Sci., vol. 31, p. 1161, 1984.
-
(1984)
IEEE Trans. Nucl. Sci.
, vol.31
, pp. 1161
-
-
Grubin, H.L.1
Kreskovsky, J.P.2
Weinberg, B.C.3
-
90
-
-
0021635966
-
Charge collection in n-type GaAs Schottky-barrier diodes struck by heavy energetic ions”
-
R. M. Gilbert, G. K. Ovrebo, J. Schifano, and T. R. Oldham, “Charge collection in n-type GaAs Schottky-barrier diodes struck by heavy energetic ions”, IEEE Trans. Nucl. Sci., vol. 31, p. 1570, 1984.
-
(1984)
IEEE Trans. Nucl. Sci.
, vol.31
, pp. 1570
-
-
Gilbert, R.M.1
Ovrebo, G.K.2
Schifano, J.3
Oldham, T.R.4
-
91
-
-
77957226828
-
Measurements of single-event-induced current transients and collected charge in GaAs and Si devices”
-
Z. Shanfield, M. M. Moriwaki, W. Digby, J. R. Srour, and D. E. Campbell, “Measurements of single-event-induced current transients and collected charge in GaAs and Si devices”, IEEE Trans. Nucl. Sci., vol. 32, p. 4104, 1985.
-
(1985)
IEEE Trans. Nucl. Sci.
, vol.32
, pp. 4104
-
-
Shanfield, Z.1
Moriwaki, M.M.2
Digby, W.3
Srour, J.R.4
Campbell, D.E.5
-
92
-
-
77957244641
-
Angular dependence of charge funneling in Si and GaAs devices”
-
Z. Shanfield, K. S. Kitazaki, M. M. Moriwaki, and D. E. Campbell, “Angular dependence of charge funneling in Si and GaAs devices”, IEEE Trans. Nucl. Sci., vol. 34, p. 1341, 1987.
-
(1987)
IEEE Trans. Nucl. Sci.
, vol.34
, pp. 1341
-
-
Shanfield, Z.1
Kitazaki, K.S.2
Moriwaki, M.M.3
Campbell, D.E.4
-
93
-
-
0041792978
-
Transient measurements of ultrafast charge collection in semiconductor diodes”
-
R. S. Wagner et al., “Transient measurements of ultrafast charge collection in semiconductor diodes”, IEEE Trans. Nucl. Sci., vol. 34, pp. 1240–1245, 1987.
-
(1987)
IEEE Trans. Nucl. Sci.
, vol.34
, pp. 1240-1245
-
-
Wagner, R.S.1
-
94
-
-
0006626505
-
Trends in parts susceptibility to single event upset from heavy ions”
-
D. K. Nichols et al., “Trends in parts susceptibility to single event upset from heavy ions”, IEEE Trans. Nucl. Sci., vol. 32, p. 4189, 1985.
-
(1985)
IEEE Trans. Nucl. Sci.
, vol.32
, pp. 4189
-
-
Nichols, D.K.1
-
95
-
-
77957237310
-
Recent trends in parts SEU susceptibilty from heavy ions”
-
D. K. Nichols, L. S. Smith, W. E. Price, R. Koga, and W. A. Kolasinski, “Recent trends in parts SEU susceptibilty from heavy ions”, IEEE Trans. Nucl. Sci., vol. 34, p. 1332, 1987.
-
(1987)
IEEE Trans. Nucl. Sci.
, vol.34
, pp. 1332
-
-
Nichols, D.K.1
Smith, L.S.2
Price, W.E.3
Koga, R.4
Kolasinski, W.A.5
-
96
-
-
0021897866
-
Radiation effects of GaAs integrated circuits”
-
GaAs Microelectronics, N. G. Einspruch and W. R. Wisseman, Eds. New York, NY: Academic Press
-
R. Zuleeg, “Radiation effects of GaAs integrated circuits”, in VLSI Electronics: Microstructure Science, vol. 11, GaAs Microelectronics, N. G. Einspruch and W. R. Wisseman, Eds. New York, NY: Academic Press, 1985, pp. 391–437.
-
(1985)
VLSI Electronics: Microstructure Science
, vol.11
, pp. 391-437
-
-
Zuleeg, R.1
-
97
-
-
0020920841
-
Single event upset measurements of GaAs E-JFET RAMs”
-
P. Shapiro, A. B. Campbell, J. C. Ritter, R. Zuleeg, and J. K. Notthoff, “Single event upset measurements of GaAs E-JFET RAMs”, IEEE Trans. Nucl. Sci., vol. 30, p. 4610, 1983.
-
(1983)
IEEE Trans. Nucl. Sci.
, vol.30
, pp. 4610
-
-
Shapiro, P.1
Campbell, A.B.2
Ritter, J.C.3
Zuleeg, R.4
Notthoff, J.K.5
-
98
-
-
0021580681
-
Charge collection measurements on GaAs devices fabricated on semi-insulating substrates”
-
M. A. Hopkins and J. R. Srour, “Charge collection measurements on GaAs devices fabricated on semi-insulating substrates”, IEEE Trans. Nucl. Sci., vol. 31, p. 1116, 1984.
-
(1984)
IEEE Trans. Nucl. Sci.
, vol.31
, pp. 1116
-
-
Hopkins, M.A.1
Srour, J.R.2
-
99
-
-
0021586531
-
SEU of complementary GaAs static RAMs due to heavy ions”
-
R. Zuleeg, J. K. Notthoff, and D. K. Nichols, “SEU of complementary GaAs static RAMs due to heavy ions”, IEEE Trans. Nucl. Sci., vol. 31, p. 1121, 1984.
-
(1984)
IEEE Trans. Nucl. Sci.
, vol.31
, pp. 1121
-
-
Zuleeg, R.1
Notthoff, J.K.2
Nichols, D.K.3
-
100
-
-
0021582906
-
Charge collection in GaAs test structures”
-
P. J. McNulty et al., “Charge collection in GaAs test structures”, IEEE Trans. Nucl. Sci., vol. 31, p. 1128, 1984.
-
(1984)
IEEE Trans. Nucl. Sci.
, vol.31
, pp. 1128
-
-
Mcnulty, P.J.1
-
101
-
-
34447345345
-
Gate charge collection and induced drain current in GaAs FETs”
-
L. D. Flesner, “Gate charge collection and induced drain current in GaAs FETs”, IEEE Trans. Nucl. Sci., vol. 32, p. 4110, 1985.
-
(1985)
IEEE Trans. Nucl. Sci.
, vol.32
, pp. 4110
-
-
Flesner, L.D.1
-
102
-
-
84939013559
-
A study of single events in GaAs SRAMs”
-
T. R. Weatherford, J. R. Hauser, and S. E. Diehl-Nagle, “A study of single events in GaAs SRAMs”, IEEE Trans. Nucl. Sci., vol. 32, p. 4170, 1985.
-
(1985)
IEEE Trans. Nucl. Sci.
, vol.32
, pp. 4170
-
-
Weatherford, T.R.1
Hauser, J.R.2
Diehl-Nagle, S.E.3
-
103
-
-
77957234825
-
Charge collection in CMOS/SOS structures”
-
A. B. Campbell et al., “Charge collection in CMOS/SOS structures”, IEEE Trans. Nucl. Sci., vol. 32, p. 4128, 1985.
-
(1985)
IEEE Trans. Nucl. Sci.
, vol.32
, pp. 4128
-
-
Campbell, A.B.1
-
104
-
-
0021628031
-
Cosmic ray induced permanent damage in MNOS EAROMs”
-
J.T. Blandford, Jr., A. E. Waskiewicz, and J. C. Pickel, “Cosmic ray induced permanent damage in MNOS EAROMs”, IEEE Trans. Nucl. Sci., vol. 31, p. 1568, 1984.
-
(1984)
IEEE Trans. Nucl. Sci.
, vol.31
, pp. 1568
-
-
Blandford, J.T.1
Waskiewicz, A.E.2
Pickel, J.C.3
-
105
-
-
79951849412
-
Heavy ion induced permanent damage in MNOS gate insulators”
-
J. C. Pickel, J. T. Blandford, Jr., A. E. Waskiewicz, and V. H. Strahan, Jr., “Heavy ion induced permanent damage in MNOS gate insulators”, IEEE Trans. Nucl. Sci., vol. 32, p. 4176, 1985.
-
(1985)
IEEE Trans. Nucl. Sci.
, vol.32
, pp. 4176
-
-
Pickel, J.C.1
Blandford, J.T.2
Waskiewicz, A.E.3
Strahan, V.H.4
-
106
-
-
0022921353
-
Burnout of power MOS transistors with heavy ions of Californium-252”
-
A. E. Waskiewicz, J. W. Groninger, V. H. Strahan, and D. M. Long, “Burnout of power MOS transistors with heavy ions of Californium-252”, IEEE Trans. Nucl. Sci., vol. 33, p. 1710, 1986.
-
(1986)
IEEE Trans. Nucl. Sci.
, vol.33
, pp. 1710
-
-
Waskiewicz, A.E.1
Groninger, J.W.2
Strahan, V.H.3
Long, D.M.4
-
107
-
-
84896095032
-
On heavy ion induced hard errors in dielectric structures”
-
T. F. Wrobel, “On heavy ion induced hard errors in dielectric structures”, IEEE Trans. Nucl. Sci., vol. 34, p. 1262, 1987.
-
(1987)
IEEE Trans. Nucl. Sci.
, vol.34
, pp. 1262
-
-
Wrobel, T.F.1
-
108
-
-
0021583810
-
Evidence for a permanent single-event upset mechanism”
-
A. Meulenberg, Jr., “Evidence for a permanent single-event upset mechanism”, IEEE Trans. Nucl. Sci., vol. 31, p. 1280, 1984.
-
(1984)
IEEE Trans. Nucl. Sci.
, vol.31
, pp. 1280
-
-
Meulenberg, A.1
-
109
-
-
0019675394
-
The search for neutron-induced hard errors in VLSI structures”
-
J. R. Srour, S. Othmer, A. Bahraman, and R. A. Hartmann, “The search for neutron-induced hard errors in VLSI structures”, IEEE Trans. Nucl. Sci., vol. 28, p. 3968, 1981.
-
(1981)
IEEE Trans. Nucl. Sci.
, vol.28
, pp. 3968
-
-
Srour, J.R.1
Othmer, S.2
Bahraman, A.3
Hartmann, R.A.4
-
110
-
-
0020936261
-
Permanent damage introduced by single particles incident on silicon devices”
-
J. R. Srour, Z. Shanfield, R. A. Hartmann, S. Othmer, and D. M. Newberry, “Permanent damage introduced by single particles incident on silicon devices”, IEEE Trans. Nucl. Sci., vol. 30, p. 4526, 1983.
-
(1983)
IEEE Trans. Nucl. Sci.
, vol.30
, pp. 4526
-
-
Srour, J.R.1
Shanfield, Z.2
Hartmann, R.A.3
Othmer, S.4
Newberry, D.M.5
-
111
-
-
0020299977
-
The structure of displacement cascades in silicon”
-
G. P. Mueller, N. D. Wilsey, and M. Rosen, “The structure of displacement cascades in silicon”, IEEE Trans. Nucl. Sci., vol. 29, p. 1493, 1982.
-
(1982)
IEEE Trans. Nucl. Sci.
, vol.29
, pp. 1493
-
-
Mueller, G.P.1
Wilsey, N.D.2
Rosen, M.3
-
112
-
-
0022204209
-
Effects of single neutron interactions in silicon integrated circuits”
-
J. R. Srour and R. A. Hartmann, “Effects of single neutron interactions in silicon integrated circuits”, IEEE Trans. Nucl. Sci., vol. 32, p. 4195, 1985.
-
(1985)
IEEE Trans. Nucl. Sci.
, vol.32
, pp. 4195
-
-
Srour, J.R.1
Hartmann, R.A.2
-
113
-
-
0018554158
-
Simulation of cosmic-ray induced soft errors and latchupin integrated-circuit computer memories”
-
W. A. Kolasinski, J. B. Blake, J. K. Anthony, W. E. Price, and E. C. Smith, “Simulation of cosmic-ray induced soft errors and latchupin integrated-circuit computer memories”, IEEE Trans. Nucl. Sci., vol. 26, p. 5087, 1979.
-
(1979)
IEEE Trans. Nucl. Sci.
, vol.26
, pp. 5087
-
-
Kolasinski, W.A.1
Blake, J.B.2
Anthony, J.K.3
Price, W.E.4
Smith, E.C.5
-
114
-
-
0020915917
-
Latchup in CMOS devices from heavy ions”
-
K. Soliman and D. K. Nichols, “Latchup in CMOS devices from heavy ions”, IEEE Trans. Nucl. Sci., vol. 30, p. 4514, 1983.
-
(1983)
IEEE Trans. Nucl. Sci.
, vol.30
, pp. 4514
-
-
Soliman, K.1
Nichols, D.K.2
-
115
-
-
0021615546
-
Heavy ion-induced single event upsets of microcircuits: A summary of the Aerospace Corporation test data”
-
R. Koga and W. A. Kolasinski, “Heavy ion-induced single event upsets of microcircuits: A summary of the Aerospace Corporation test data”, IEEE Trans. Nucl. Sci., vol. 31, p. 1190, 1984.
-
(1984)
IEEE Trans. Nucl. Sci.
, vol.31
, pp. 1190
-
-
Koga, R.1
Kolasinski, W.A.2
-
116
-
-
0021594459
-
Investigation of heavy particle induced latchup, using a Californium-252 source, in CMOS SRAMs and PROMs”
-
J. H. Stephen et al., “Investigation of heavy particle induced latchup, using a Californium-252 source, in CMOS SRAMs and PROMs”, IEEE Trans. Nucl. Sci., vol. 31, p. 1207, 1984.
-
(1984)
IEEE Trans. Nucl. Sci.
, vol.31
, pp. 1207
-
-
Stephen, J.H.1
-
117
-
-
0014922010
-
Gamma dose distributions at and near the interface of different materials”
-
Dec.
-
J. A. Wall and E. A. Burke, “Gamma dose distributions at and near the interface of different materials”, IEEE Trans. Nucl. Sci., vol. 17, p. 305, Dec. 1970.
-
(1970)
IEEE Trans. Nucl. Sci.
, vol.17
, pp. 305
-
-
Wall, J.A.1
Burke, E.A.2
-
118
-
-
84944979293
-
Ionization, secondary emission, and Compton currents at gamma irradiation interfaces”
-
Dec.
-
A. R. Frederickson and E. A. Burke, “Ionization, secondary emission, and Compton currents at gamma irradiation interfaces”, IEEE Trans. Nucl. Sci., vol. 18, p. 162, Dec. 1971.
-
(1971)
IEEE Trans. Nucl. Sci.
, vol.18
, pp. 162
-
-
Frederickson, A.R.1
Burke, E.A.2
-
119
-
-
0038428072
-
Photo-Compton currents at material interfaces: theory and experiment”
-
Dec.
-
T. A. Dellin, K. W. Dolan, and C. J. MacCallum, “Photo-Compton currents at material interfaces: theory and experiment”, IEEE Trans. Nucl. Sci., vol. 21, p. 227, Dec. 1974.
-
(1974)
IEEE Trans. Nucl. Sci.
, vol.21
, pp. 227
-
-
Dellin, T.A.1
Dolan, K.W.2
Maccallum, C.J.3
-
120
-
-
0007962529
-
MonteCarlo analysis of dose profiles near photon irradiated material interfaces”
-
J. C. Garth, W. L. Chadsey, and R. L. Sheppard, “MonteCarlo analysis of dose profiles near photon irradiated material interfaces”, IEEE Trans. Nucl. Sci., vol. 22, p. 2562, 1975.
-
(1975)
IEEE Trans. Nucl. Sci.
, vol.22
, pp. 2562
-
-
Garth, J.C.1
Chadsey, W.L.2
Sheppard, R.L.3
-
121
-
-
84938155309
-
Packaging effects on transistor radiation response”
-
R. A. Berger and J. L. Azarewicz, “Packaging effects on transistor radiation response”, IEEE Trans. Nucl. Sci., vol. 22, p. 2568, 1975.
-
(1975)
IEEE Trans. Nucl. Sci.
, vol.22
, pp. 2568
-
-
Berger, R.A.1
Azarewicz, J.L.2
-
122
-
-
0019282440
-
The role of scattered radiation in the dosimetry of small device structures”
-
J. C. Garth, E. A. Burke, and S. Woolf, “The role of scattered radiation in the dosimetry of small device structures”, IEEE Trans. Nucl. Sci., vol. 27, p. 1459, 1980.
-
(1980)
IEEE Trans. Nucl. Sci.
, vol.27
, pp. 1459
-
-
Garth, J.C.1
Burke, E.A.2
Woolf, S.3
-
123
-
-
0020271814
-
Dosimetry errors in Co-60 gamma cells due to transition zone phenomena”
-
L. F. Lowe, J. R. Cappelli, and E. A. Burke, “Dosimetry errors in Co-60 gamma cells due to transition zone phenomena”, IEEE Trans. Nucl. Sci., vol. 29, p. 1992, 1982.
-
(1982)
IEEE Trans. Nucl. Sci.
, vol.29
, pp. 1992
-
-
Lowe, L.F.1
Cappelli, J.R.2
Burke, E.A.3
-
124
-
-
0020288667
-
Dose enhancement effects in semiconductor devices”
-
D. M. Long, D. G. Millward, and J. Wallace, “Dose enhancement effects in semiconductor devices”, IEEE Trans. Nucl. Sci., vol. 29, p. 1980, 1982.
-
(1982)
IEEE Trans. Nucl. Sci.
, vol.29
, pp. 1980
-
-
Long, D.M.1
Millward, D.G.2
Wallace, J.3
-
125
-
-
0019070531
-
Radiation effects in GaAs junction field-effect transistors”
-
R. Zuleeg and K. Lehovec, “Radiation effects in GaAs junction field-effect transistors”, IEEE Trans. Nucl. Sci., vol. 27, p. 1343, 1980.
-
(1980)
IEEE Trans. Nucl. Sci.
, vol.27
, pp. 1343
-
-
Zuleeg, R.1
Lehovec, K.2
-
126
-
-
0015300810
-
Gamma-radiation damage in epitaxial gallium arsenide”
-
G. E. Brehm and G. L. Pearson, “Gamma-radiation damage in epitaxial gallium arsenide”, J. Appl. Phys., vol. 43, p. 568, 1972.
-
(1972)
J. Appl. Phys.
, vol.43
, pp. 568
-
-
Brehm, G.E.1
Pearson, G.L.2
-
127
-
-
0020102290
-
Proton damage effects on light emitting diodes”
-
B. H. Rose and C. E. Barnes, “Proton damage effects on light emitting diodes”, J. Appl. Phys., vol. 53, p. 1772, 1982.
-
(1982)
J. Appl. Phys.
, vol.53
, pp. 1772
-
-
Rose, B.H.1
Barnes, C.E.2
-
128
-
-
0021388677
-
Analysis of LED degradation; proton-bombarded GaAs”
-
G. W. 't Hooft and C. van Opdorp, “Analysis of LED degradation; proton-bombarded GaAs”, Solid-State Electron., vol. 27, p. 253, 1984.
-
(1984)
Solid-State Electron.
, vol.27
, pp. 253
-
-
'T Hooft, G.W.1
Van Opdorp, C.2
-
129
-
-
0003707716
-
Radiation effects on light sources and detectors”
-
Mar.
-
C. E. Barnes, “Radiation effects on light sources and detectors”, in Radiation Effects in Optical Materials, SPIE, vol. 541, p. 138, Mar. 1985.
-
(1985)
Radiation Effects in Optical Materials, SPIE
, vol.541
, pp. 138
-
-
Barnes, C.E.1
-
130
-
-
84936896992
-
Mechanisms of radiation effects on lasers”
-
Dec.
-
D. M. J. Compton and R. A. Cesena, “Mechanisms of radiation effects on lasers”, IEEE Trans. Nucl. Sci., vol. 14, p. 55, Dec. 1967.
-
(1967)
IEEE Trans. Nucl. Sci.
, vol.14
, pp. 55
-
-
Compton, D.M.J.1
Cesena, R.A.2
-
131
-
-
0010833153
-
Effects of Co60 gamma irradiation on epitaxial GaAs laser diodes”
-
C. E. Barnes, “Effects of Co60 gamma irradiation on epitaxial GaAs laser diodes”, Phys. Rev., vol. B1, p. 4735, 1970.
-
(1970)
Phys. Rev.
, vol.B1
, pp. 4735
-
-
Barnes, C.E.1
-
132
-
-
0016927128
-
Effects of proton bombardment on the properties of GaAs laser diodes”
-
H. J. Minden, “Effects of proton bombardment on the properties of GaAs laser diodes”, J. Appl. Phys., vol. 47, p. 1090, 1976.
-
(1976)
J. Appl. Phys.
, vol.47
, pp. 1090
-
-
Minden, H.J.1
-
133
-
-
0020301830
-
Proton damage in laser diodes and LEDs”
-
G. A. Evans, Ed., Proc. SPIE
-
I. Arimura and C. E. Barnes, “Proton damage in laser diodes and LEDs”, in Laser and Laser Systems Reliabilty, G. A. Evans, Ed., Proc. SPIE, vol. 328, p. 83, 1982.
-
(1982)
Laser and Laser Systems Reliabilty
, vol.328
, pp. 83
-
-
Arimura, I.1
Barnes, C.E.2
-
134
-
-
0016092363
-
Increased radiation hardness of GaAs laser diodes at high current densities”
-
C. E. Barnes, “Increased radiation hardness of GaAs laser diodes at high current densities”, J. Appl. Phys., vol. 45, p. 3485, 1974.
-
(1974)
J. Appl. Phys.
, vol.45
, pp. 3485
-
-
Barnes, C.E.1
-
136
-
-
84958482419
-
Overview of radiation effects in fiber optics”
-
Mar.
-
E. J. Friebele et al., “Overview of radiation effects in fiber optics”, in Radiation Effects in Optical Materials, SPIE, vol. 541, p. 70, Mar. 1985.
-
(1985)
Radiation Effects in Optical Materials, SPIE
, vol.541
, pp. 70
-
-
Friebele, E.J.1
-
137
-
-
51449093497
-
Fiber optics in transient radiation fields”
-
Mar.
-
P. B. Lyons, “Fiber optics in transient radiation fields”, in Radiation Effects in Optical Materials, SPIE, vol. 541, p. 89, Mar. 1985.
-
(1985)
Radiation Effects in Optical Materials, SPIE
, vol.541
, pp. 89
-
-
Lyons, P.B.1
-
138
-
-
0018554752
-
Radiation damage coefficients for silicon depletion regions”
-
J. R. Srour, S. C. Chen, S. Othmer, and R. A. Hartmann, “Radiation damage coefficients for silicon depletion regions”, IEEE Trans. Nucl. Sci., vol. 26, p. 4784, 1979.
-
(1979)
IEEE Trans. Nucl. Sci.
, vol.26
, pp. 4784
-
-
Srour, J.R.1
Chen, S.C.2
Othmer, S.3
Hartmann, R.A.4
-
139
-
-
0019279984
-
Transient and permanent effects of neutron bombardment on a commercially available N-buried-channel CCD”
-
J. R. Srour, R. A. Hartmann, and S. Othmer, “Transient and permanent effects of neutron bombardment on a commercially available N-buried-channel CCD”, IEEE Trans. Nucl. Sci., vol. 27, p. 1402, 1980.
-
(1980)
IEEE Trans. Nucl. Sci.
, vol.27
, pp. 1402
-
-
Srour, J.R.1
Hartmann, R.A.2
Othmer, S.3
-
140
-
-
0015600940
-
Photovoltaic effects in the ionization response of tantalum capacitors”
-
R. T. Baker, T. M. Flanagan, and R. E. Leadon, “Photovoltaic effects in the ionization response of tantalum capacitors”, ’. Appl. Phys., vol. 44, p. 995, 1973.
-
(1973)
’. Appl. Phys.
, vol.44
, pp. 995
-
-
Baker, R.T.1
Flanagan, T.M.2
Leadon, R.E.3
-
141
-
-
0015770571
-
Pre-irradiation biasing effects in tantalum capacitors”
-
Dec.
-
H. E. Boesch, Jr., and J. M. McGarrity, “Pre-irradiation biasing effects in tantalum capacitors”, IEEE Trans. Nucl. Sci., vol. 20, p. 129, Dec. 1973.
-
(1973)
IEEE Trans. Nucl. Sci.
, vol.20
, pp. 129
-
-
Boesch, H.E.1
Mcgarrity, J.M.2
-
142
-
-
0017700122
-
Charge loss and recovery characteristics of irradiated tantalum capacitors”
-
L. T. Smith, L. Apodaca, V. R. DeMartino, and J. W. Trew, “Charge loss and recovery characteristics of irradiated tantalum capacitors”, IEEE Trans. Nucl. Sci., vol. 24, p. 2230, 1977.
-
(1977)
IEEE Trans. Nucl. Sci.
, vol.24
, pp. 2230
-
-
Smith, L.T.1
Apodaca, L.2
Demartino, V.R.3
Trew, J.W.4
-
143
-
-
0344821902
-
Luminescence and absorption of electron-irradiated common optical glasses, sapphire, and quartz”
-
M. J. Treadaway, B. C. Passenheim, and B. D. Kitterer, “Luminescence and absorption of electron-irradiated common optical glasses, sapphire, and quartz”, IEEE Trans. Nucl. Sci., vol. 22, p. 2253, 1975.
-
(1975)
IEEE Trans. Nucl. Sci.
, vol.22
, pp. 2253
-
-
Treadaway, M.J.1
Passenheim, B.C.2
Kitterer, B.D.3
-
144
-
-
0017243389
-
Radiation coloration and bleaching of glass”
-
M. J. Treadaway, B. C. Passenheim, B. D. Kitterer, and P. Schall, “Radiation coloration and bleaching of glass”, IEEE Trans. Nucl. Sci., vol. 23, p. 1820, 1976.
-
(1976)
IEEE Trans. Nucl. Sci.
, vol.23
, pp. 1820
-
-
Treadaway, M.J.1
Passenheim, B.C.2
Kitterer, B.D.3
Schall, P.4
-
146
-
-
84930556132
-
Effects of pulsed ionizing radiation on some selected quartz oscillator crystals”
-
R. A. Poll and S. L. Ridgway, “Effects of pulsed ionizing radiation on some selected quartz oscillator crystals”, IEEE Trans. Nucl. Sci., vol. 13, p. 130, 1966.
-
(1966)
IEEE Trans. Nucl. Sci.
, vol.13
, pp. 130
-
-
Poll, R.A.1
Ridgway, S.L.2
-
147
-
-
84939708059
-
Rapid annealing of frequency change in crystal resonators following pulsed X-irradia-tion”
-
Dec.
-
J. C. King and H. H. Sander, “Rapid annealing of frequency change in crystal resonators following pulsed X-irradia-tion”, IEEE Trans. Nucl. Sci., vol. 19, p. 23, Dec. 1972.
-
(1972)
IEEE Trans. Nucl. Sci.
, vol.19
, pp. 23
-
-
King, J.C.1
Sander, H.H.2
-
148
-
-
0015771301
-
Transient change in Q and frequency of AT-cut quartz resonators following exposure to pulse X-rays”
-
Dec.
-
J. C. King and H. H. Sander, “Transient change in Q and frequency of AT-cut quartz resonators following exposure to pulse X-rays”, IEEE Trans. Nucl. Sci., vol. 20, p. 117, Dec. 1973.
-
(1973)
IEEE Trans. Nucl. Sci.
, vol.20
, pp. 117
-
-
King, J.C.1
Sander, H.H.2
-
149
-
-
0017677612
-
Hardening frequency standards for space applications”
-
T. M. Flanagan, L. J. Palkuti, R. E. Leadon, and G. E. Bloom, “Hardening frequency standards for space applications”, IEEE Trans. Nucl. Sci., vol. 24, p. 2252, 1977.
-
(1977)
IEEE Trans. Nucl. Sci.
, vol.24
, pp. 2252
-
-
Flanagan, T.M.1
Palkuti, L.J.2
Leadon, R.E.3
Bloom, G.E.4
-
150
-
-
0021630453
-
Effects of vacuum sweeping and radiation on defect distribution in quartz”
-
H.G. Lipson and A. Kahan, “Effects of vacuum sweeping and radiation on defect distribution in quartz”, IEEE Trans. Nucl. Sci., vol. 31, p. 1223, 1984.
-
(1984)
IEEE Trans. Nucl. Sci.
, vol.31
, pp. 1223
-
-
Lipson, H.G.1
Kahan, A.2
-
151
-
-
0015775222
-
Radiation tolerance of bubble-domain materials and devices”
-
Dec.
-
R. A. Williams, R. D. Henry, T. T. Chen, and J. L. Archer, “Radiation tolerance of bubble-domain materials and devices”, IEEE Trans. Nucl. Sci., vol. 20, p. 229, Dec. 1973.
-
(1973)
IEEE Trans. Nucl. Sci.
, vol.20
, pp. 229
-
-
Williams, R.A.1
Henry, R.D.2
Chen, T.T.3
Archer, J.L.4
-
152
-
-
84939028239
-
Radiation induced replacement currents in a plated wire memory”
-
Dec.
-
R. L. Fitzwilson and G. G. Comisar, “Radiation induced replacement currents in a plated wire memory”, IEEE Trans. Nucl. Sci., vol. 21, p. 295, Dec. 1974.
-
(1974)
IEEE Trans. Nucl. Sci.
, vol.21
, pp. 295
-
-
Fitzwilson, R.L.1
Comisar, G.G.2
-
153
-
-
0018111993
-
A survey of radiation hardened microelectronic memory technology”
-
P. J. Vail, “A survey of radiation hardened microelectronic memory technology”, IEEE Trans. Nucl. Sci., vol. 25, p. 1196, 1978.
-
(1978)
IEEE Trans. Nucl. Sci.
, vol.25
, pp. 1196
-
-
Vail, P.J.1
-
154
-
-
0018554755
-
Short pulse transient radiation effects on a 92 K-bit magnetic bubble memory system”
-
P. J. Vail et al., “Short pulse transient radiation effects on a 92 K-bit magnetic bubble memory system”, IEEE Trans. Nucl. Sci., vol. 26, p. 4847, 1979.
-
(1979)
IEEE Trans. Nucl. Sci.
, vol.26
, pp. 4847
-
-
Vail, P.J.1
-
155
-
-
0020250769
-
Alpha induced upsets in Josephson tunnel junctions”
-
R. Magno, M. Nisenoff, R. Shelby, J. Kidd, and A. B. Campbell, “Alpha induced upsets in Josephson tunnel junctions”, IEEE Trans. Nucl. Sci., vol. 29, p. 2090, 1982.
-
(1982)
IEEE Trans. Nucl. Sci.
, vol.29
, pp. 2090
-
-
Magno, R.1
Nisenoff, M.2
Shelby, R.3
Kidd, J.4
Campbell, A.B.5
-
156
-
-
84939070511
-
Radiation effects in high Tc superconductors for space applications”
-
W. G. Maisch et al., “Radiation effects in high Tc superconductors for space applications”, IEEE Trans. Nucl. Sci., vol. 34, p. 1782, 1987.
-
(1987)
IEEE Trans. Nucl. Sci.
, vol.34
, pp. 1782
-
-
Maisch, W.G.1
-
157
-
-
0016101026
-
Radiation effects on semiconductor devices”
-
B. L. Gregory and C. W. Gwyn, “Radiation effects on semiconductor devices”, Proc. IEEE, vol. 62, p. 1264, 1974.
-
(1974)
Proc. IEEE
, vol.62
, pp. 1264
-
-
Gregory, B.L.1
Gwyn, C.W.2
-
158
-
-
84934061532
-
Hole removal in thin-gate MOSFETs by tunneling”
-
J. M. Benedetto, H. E. Boesch, Jr., F. B. McLean, and J. P. Mize, “Hole removal in thin-gate MOSFETs by tunneling”, IEEE Trans. Nucl. Sci., vol. NS-32, p. 3916, 1985.
-
(1985)
IEEE Trans. Nucl. Sci.
, vol.NS-32
, pp. 3916
-
-
Benedetto, J.M.1
Boesch, H.E.2
Mclean, F.B.3
Mize, J.P.4
-
159
-
-
0020247202
-
Error analysis and prevention of cosmic ion-induced soft errors in static CMOS RAMs”
-
S. E. Diehl, A. Ochoa, Jr., P. V. Dressendorfer, R. Koga, and W. A. Kolasinski, “Error analysis and prevention of cosmic ion-induced soft errors in static CMOS RAMs”, IEEE Trans. Nucl. Sci., vol. NS-29, p. 2032, 1982.
-
(1982)
IEEE Trans. Nucl. Sci.
, vol.NS-29
, pp. 2032
-
-
Diehl, S.E.1
Ochoa, A.2
Dressendorfer, P.V.3
Koga, R.4
Kolasinski, W.A.5
-
160
-
-
0023533304
-
An evaluation of low-energy X-ray and Cobalt-60 irradiations of MOS transistors”
-
C. M. Dozier, D. M. Fleetwood, D. B. Brown, and P. S. Winokur, “An evaluation of low-energy X-ray and Cobalt-60 irradiations of MOS transistors”, IEEE Trans. Nucl. Sci., vol. NS-34, p. 1535, 1987.
-
(1987)
IEEE Trans. Nucl. Sci.
, vol.NS-34
, pp. 1535
-
-
Dozier, C.M.1
Fleetwood, D.M.2
Brown, D.B.3
Winokur, P.S.4
|