메뉴 건너뛰기




Volumn 9, Issue 10, 1988, Pages 509-511

Direct Evidence Supporting the Premises of a Two-Dimensional Diode Model for the Parasitic Thyristor in CMOS Circuits Built on Thin Epi

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; SEMICONDUCTOR DIODES; THYRISTORS;

EID: 0024091524     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.17827     Document Type: Article
Times cited : (10)

References (10)
  • 1
    • 30244572023 scopus 로고
    • Forward characteristics of thyristors in the fired state
    • A. Herlett and K. Raithel, “Forward characteristics of thyristors in the fired state,” Solid-State Electron., vol. 9, p. 1089, 1966.
    • (1966) Solid-State Electron. , vol.9 , pp. 1089
    • Herlett, A.1    Raithel, K.2
  • 3
    • 0023328942 scopus 로고
    • High holding voltage C- MOS technology with lightly doped source and drain regions
    • B. Ricco, E. Sangiorgi, and G. Ferriani, “High holding voltage C- MOS technology with lightly doped source and drain regions,” IEEE Trans Electron Devices, vol. ED-34, p. 810, 1987.
    • (1987) IEEE Trans Electron Devices , vol.34 ED , pp. 810
    • Ricco, B.1    Sangiorgi, E.2    Ferriani, G.3
  • 4
    • 0023331957 scopus 로고
    • An analytic model of holding voltage for LatchUp in epitaxial CMOS
    • J.A. Seitchik, A. Chatteijee, and P. Yang, “An analytic model of holding voltage for LatchUp in epitaxial CMOS,” IEEE Electron Device Lett., vol. EDL-8, p. 157, 1987.
    • (1987) IEEE Electron Device Lett. , vol.8 EDL , pp. 157
    • Seitchik, J.A.1    Chatteijee, A.2    Yang, P.3
  • 5
    • 0022862796 scopus 로고
    • A simple holding voltage analysis for latchup in epiaxial CMOS
    • 1986
    • A. Chatterjee, J.A. Seitchik, and P. Yang, “A simple holding voltage analysis for latchup in epiaxial CMOS,” in 1986 Symp. VLSI Technol., 1986, p. 25.
    • (1986) Symp. VLSI Technol. , pp. 25
    • Chatterjee, A.1    Seitchik, J.A.2    Yang, P.3
  • 7
    • 0022332150 scopus 로고
    • A highly LatchUp immune l^m CMOS technology fabricated with 1 MeV ion implantation and self-aligned TiSi2
    • F.S. Lai et al., “A highly LatchUp immune l^m CMOS technology fabricated with 1 MeV ion implantation and self-aligned TiSi2,” in IEDM Tech. Dig., 1985, p. 513.
    • (1985) IEDM Tech. Dig. , pp. 513
    • Lai, F.S.1
  • 8
    • 0022286039 scopus 로고
    • Latchup-free CMOS structure using shallow trench isolation
    • Y. Niitsu et al., “Latchup-free CMOS structure using shallow trench isolation,” in IEDM Tech. Dig., 1985, p. 509.
    • (1985) IEDM Tech. Dig. , pp. 509
    • Niitsu, Y.1
  • 10
    • 0023999007 scopus 로고
    • Modeling of bistable device I-V characteristic resulting from conductivity modulation in semiconductors
    • I. Son, T-W Tang, and D.H. Navon, “Modeling of bistable device I-V characteristic resulting from conductivity modulation in semiconductors,” IEEE Trans. Electron Devices, vol. 35, p. 45, 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 , pp. 45
    • Son, I.1    Tang, T-W.2    Navon, D.H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.