High-Efficiency Electroabsorption In Quaternary Aigalnas Quantum-Well Optical Modulators

Electronics Letters

Volumn 24, Issue 21, 1988, Pages 1324-1325

  Wakita, K ^a   Kotaka, I ^a   Asai, H ^a   Nojima, S ^a   Mikami, O ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Electro optics; Modulators; Optical modulation; Optoelectronics

Indexed keywords

LIGHT--MODULATORS; OPTOELECTRONIC DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS--APPLICATIONS; SEMICONDUCTING GALLIUM COMPOUNDS--APPLICATIONS; SEMICONDUCTING INDIUM COMPOUNDS--APPLICATIONS;

EXTINCTION RATIO; HIGH-EFFICIENCY ELECTROABSORTPTION; MODULATION FREQUENCY RESPONSE; MULTIPLE QUANTUM WELL DEVICES; OPTICAL MODULATORS; PHOTOCURRENT SPECTRAL DEPENDENCE;

MODULATORS;

EID: 0024090372     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19880900     Document Type: Article

References (6)

1. Wakita, к., kawamura, y., nakao, м., and asahi, н.: 'Long wavelength waveguide multiple quantum well optical modulators', IEEE J. Quantum Electron 1987, QE-23, pp. 2210-2215
2. Wakita, к., nojima, s., nakashima, k., and kawaguchi, y.: 'GalnAs/InP waveguide multiple-quantum-well optical modulator with 9 dB on/off ratio', Electron. Lett., 1987, 23, pp. 1067-1069
3. koren, u., miller, в. I., koch, t. l., eisenstein, g., tucker, r. s., bar-Joseph, I., and chemla, d. s.: 'Low-loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulator', Appl. Phys. Lett., 1987, 51, pp. 1132-1134
4. WOOD, T. H., CARR, E. Ё., BURRUS, Ё. A., TUCKER, R. S., CHIU, Т.-Ё., and TSANG, w.-T.: 'High-speed waveguide optical modulator made from GaSb/AlGaSb multiple quantum wells (MQWs)', Electron. Lett., 1987, 23, pp. 540-542
5. MILLER, D. Ё. Б., CHEMLA, D. S., DAMEN, Т. Ё., GOSSARD, Ё. Ё., and wœgmann, w.: 'Electric field dependence of optical absorption near the band gap of quantum-well structures', Phys. Rev. B., 1985, 32, pp. 1043-1060
6. bar-joseph, i., klingshirn, с., miller, d. а. в., chemla, d. s., koren, U., and miller, в. i.: 'Quantum-confined Stark effect in InGaAs/InP quantum wells grown by organometallic vapor phase epitaxy', Appl. Phys. Lett., 1987, 50, pp. 1010-1012