An Experimental 512-Bit Nonvolatile Memory with Ferroelectric Storage Cell

IEEE Journal of Solid-State Circuits

Volumn 23, Issue 5, 1988, Pages 1171-1175

  Evans, Joseph T ^a   Womack, Richard ^b  

^a Krysalis Corporation ^*  (United States)

^b Krysahs Coboration ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CERAMIC MATERIALS -- FERROELECTRIC; FERROELECTRIC DEVICES; INTEGRATED CIRCUIT TESTING;

512-BIT MEMORY; FERROELECTRIC-CAPACITOR STORAGE CELLS; NONVOLATILE MEMORY; ONBOARD TEST CIRCUITRY;

DATA STORAGE, DIGITAL;

EID: 0024089464     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.5940     Document Type: Article

References (6)

1. M. E. Lines and A. M. Glass. Principles and Applications of Ferroelectrics and Related Materials, Oxford: Clarendon, 1977.
2. B. Jaffe, W. R. Cook, and H. Jaffe. Piezoelectric Ceramics, London: Academic, 1971.
3. J. M. Herbert. Ceramic Dielectrics and Capacitors. New York: Gordon and Breach. 1985.
4. J. C. Burfoot and G. W. Taylor, Polar Dielectrics and Their Applications. Berkeley: Univ. of Calif. Press. 1979.
5. T. F. Wrobel, J. A. Bullington. and L. J. Schwee. “Radiation hardness evaluation of thin film ferroelectric capacitors,” in Govt. Microcircuit Applications Conf. Dig. Papers, Oct. 1987, p. 267.
6. J. A. Ballington, “Ferroelectric radiation hardness for nonvolatile memory applications,” Krysalis Corp., Albuquerque, NM, Tech. Rep., Nov. 1987.