-
1
-
-
0004321982
-
Photodetectors
-
New York: Springer-Verlag, ch. 3.
-
D.P. Schinke, R.G. Smith, and A.R. Hartman, “Photodetectors,” in Semiconductor Devices for Optical Communication. New York: Springer-Verlag, 1980, ch. 3.
-
(1980)
Semiconductor Devices for Optical Communication
-
-
Schinke, D.P.1
Smith, R.G.2
Hartman, A.R.3
-
2
-
-
0023670433
-
Comparative study of easily integrable photodetectors
-
S.J. Wojtczuk, J.M. Ballantyne, S. Wanuga, and Y.K. Chen, “Comparative study of easily integrable photodetectors,” IEEE J. Lightwave Technol., vol. LT-5, pp. 1365–1370, 1987.
-
(1987)
IEEE J. Lightwave Technol.
, vol.5 LT
, pp. 1365-1370
-
-
Wojtczuk, S.J.1
Ballantyne, J.M.2
Wanuga, S.3
Chen, Y.K.4
-
3
-
-
0022752948
-
Low dark current GaAs metal-semiconductor-metal (MSM).photodiodes using WSi* contacts
-
M. Ito and O. Wada, “Low dark current GaAs metal-semiconductor-metal (MSM).photodiodes using WSi* contacts,” IEEE J. Quantum Electron., vol. QE-22, pp. 1073–1077, 1986.
-
(1986)
IEEE J. Quantum Electron.
, vol.22 QE
, pp. 1073-1077
-
-
Ito, M.1
Wada, O.2
-
4
-
-
0022080182
-
The DSI diode-A fast large-area optoelectronic detector
-
W. Roth, H. Schumacher, J. Kluge, H.J. Geelen, and H. Beneking, “The DSI diode-A fast large-area optoelectronic detector,” IEEE Trans. Electron Devices, vol. ED-32, pp. 1034–1036, 1985.
-
(1985)
IEEE Trans. Electron Devices
, vol.32 ED
, pp. 1034-1036
-
-
Roth, W.1
Schumacher, H.2
Kluge, J.3
Geelen, H.J.4
Beneking, H.5
-
5
-
-
3042997164
-
highspeed monolithically integrated GaAs photoreceiver using a metal-semiconductor-metal photodiode
-
M. Ito et al., “highspeed monolithically integrated GaAs photoreceiver using a metal-semiconductor-metal photodiode,” Appl. Phys. Lett., vol. 47, pp. 1129–1131, 1985.
-
(1985)
Appl. Phys. Lett.
, vol.47
, pp. 1129-1131
-
-
Ito, M.1
-
6
-
-
0022809925
-
Monolithic integration of a 3-GHz detector/preamplifier using a refractory-gate, ion-implanted MESFET process
-
D.L. Rogers, “Monolithic integration of a 3-GHz detector/preamplifier using a refractory-gate, ion-implanted MESFET process,” IEEE Electron Device Lett., vol. EDL-7, pp. 600–602, 1986.
-
(1986)
IEEE Electron Device Lett.
, vol.7 EDL
, pp. 600-602
-
-
Rogers, D.L.1
-
7
-
-
0023995731
-
5.2-GHz bandwidth monolithic GaAs optoelectronic receiver
-
Ch. S. Harder, B.J. Van Zeghbroeck, H. Meier, W. Patrick, and P. Vettiger, “5.2-GHz bandwidth monolithic GaAs optoelectronic receiver,” IEEE Electron Device Lett., vol. EDL-9, pp. 171–173, 1988.
-
(1988)
IEEE Electron Device Lett.
, vol.9 EDL
, pp. 171-173
-
-
Harder, Ch.S.1
van Zeghbroeck, B.J.2
Meier, H.3
Patrick, W.4
Vettiger, P.5
-
8
-
-
0022985543
-
MBE grown GaAs MESFETs with Ultrahigh gm and fT
-
(Los Angeles, CA)
-
U.K. Mishra, R.S. Beaubien, M.J. Delaney, A.S. Brown, and L.H. Hackett, “MBE grown GaAs MESFETs with Ultrahigh gm and fT,” in IEDM Tech. Dig. (Los Angeles, CA), 1986, pp. 829–831.
-
(1986)
IEDM Tech. Dig.
, pp. 829-831
-
-
Mishra, U.K.1
Beaubien, R.S.2
Delaney, M.J.3
Brown, A.S.4
Hackett, L.H.5
-
9
-
-
0022995099
-
High performance GaAs MESFET's
-
(Los Angeles, CA)
-
B.J. Van Zeghbroeck, W. Patrick, H. Meier, P. Vettiger, and P. Wolf, “High performance GaAs MESFET's,” in IEDM Tech. Dig. (Los Angeles, CA), 1986, pp. 832–834.
-
(1986)
IEDM Tech. Dig.
, pp. 832-834
-
-
van Zeghbroeck, B.J.1
Patrick, W.2
Meier, H.3
Vettiger, P.4
Wolf, P.5
-
10
-
-
21544435587
-
Picosecond photoconductivity in radiation-damaged silicon-on-sapphire films
-
P.R. Smith, D.H. Auston, A.M. Johnson, and W.M. Augustyniak, “Picosecond photoconductivity in radiation-damaged silicon-on-sapphire films,” Appl. Phys. Lett., vol. 38, pp. 47–50, 1981.
-
(1981)
Appl. Phys. Lett.
, vol.38
, pp. 47-50
-
-
Smith, P.R.1
Auston, D.H.2
Johnson, A.M.3
Augustyniak, W.M.4
-
11
-
-
84939357732
-
Analysis of picosecond and subpicosecond MSM photodiodes with very low bias voltage
-
presented at the, Boulder, CO
-
B.J. Van Zeghbroeck, “Analysis of picosecond and subpicosecond MSM photodiodes with very low bias voltage,” presented at the Device Res. Conf., Boulder, CO, 1988.
-
(1988)
Device Res. Conf.
-
-
van Zeghbroeck, B.J.1
-
12
-
-
0019599838
-
A novel heterostructure interdigital photodetector with picosecond optical response
-
L. Figuera and C.W. Slayman, “A novel heterostructure interdigital photodetector with picosecond optical response,” IEEE Electron Device Lett., vol. EDL-2, pp. 208–210, 1981.
-
(1981)
IEEE Electron Device Lett.
, vol.2 EDL
, pp. 208-210
-
-
Figuera, L.1
Slayman, C.W.2
-
13
-
-
0023670581
-
UltraWide-Band long-wavelength p-i-n photodetectors
-
J.E. Bowers and C.A. Burris, “UltraWide-Band long-wavelength p-i-n photodetectors,” IEEE J. Lightwave Technol., vol. LT-5, pp. 1339–1350, 1987.
-
(1987)
IEEE J. Lightwave Technol.
, vol.5 LT
, pp. 1339-1350
-
-
Bowers, J.E.1
Burris, C.A.2
-
14
-
-
0021096913
-
100 GHz bandwidth planar GaAs Schottky photodiode
-
S.Y. Wang and D.M. Bloom, “100 GHz bandwidth planar GaAs Schottky photodiode,” Electron. Lett., vol. 19, pp. 554–555, 1983.
-
(1983)
Electron. Lett.
, vol.19
, pp. 554-555
-
-
Wang, S.Y.1
Bloom, D.M.2
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