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Volumn 9, Issue 10, 1988, Pages 527-529

105-GHz Bandwidth Metal-Semiconductor-Metal Photodiode

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED OPTICS; MICROWAVE MEASUREMENTS; OPTICAL COMMUNICATION EQUIPMENT; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER;

EID: 0024088229     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.17833     Document Type: Article
Times cited : (114)

References (14)
  • 3
    • 0022752948 scopus 로고
    • Low dark current GaAs metal-semiconductor-metal (MSM).photodiodes using WSi* contacts
    • M. Ito and O. Wada, “Low dark current GaAs metal-semiconductor-metal (MSM).photodiodes using WSi* contacts,” IEEE J. Quantum Electron., vol. QE-22, pp. 1073–1077, 1986.
    • (1986) IEEE J. Quantum Electron. , vol.22 QE , pp. 1073-1077
    • Ito, M.1    Wada, O.2
  • 5
    • 3042997164 scopus 로고
    • highspeed monolithically integrated GaAs photoreceiver using a metal-semiconductor-metal photodiode
    • M. Ito et al., “highspeed monolithically integrated GaAs photoreceiver using a metal-semiconductor-metal photodiode,” Appl. Phys. Lett., vol. 47, pp. 1129–1131, 1985.
    • (1985) Appl. Phys. Lett. , vol.47 , pp. 1129-1131
    • Ito, M.1
  • 6
    • 0022809925 scopus 로고
    • Monolithic integration of a 3-GHz detector/preamplifier using a refractory-gate, ion-implanted MESFET process
    • D.L. Rogers, “Monolithic integration of a 3-GHz detector/preamplifier using a refractory-gate, ion-implanted MESFET process,” IEEE Electron Device Lett., vol. EDL-7, pp. 600–602, 1986.
    • (1986) IEEE Electron Device Lett. , vol.7 EDL , pp. 600-602
    • Rogers, D.L.1
  • 10
    • 21544435587 scopus 로고
    • Picosecond photoconductivity in radiation-damaged silicon-on-sapphire films
    • P.R. Smith, D.H. Auston, A.M. Johnson, and W.M. Augustyniak, “Picosecond photoconductivity in radiation-damaged silicon-on-sapphire films,” Appl. Phys. Lett., vol. 38, pp. 47–50, 1981.
    • (1981) Appl. Phys. Lett. , vol.38 , pp. 47-50
    • Smith, P.R.1    Auston, D.H.2    Johnson, A.M.3    Augustyniak, W.M.4
  • 11
    • 84939357732 scopus 로고
    • Analysis of picosecond and subpicosecond MSM photodiodes with very low bias voltage
    • presented at the, Boulder, CO
    • B.J. Van Zeghbroeck, “Analysis of picosecond and subpicosecond MSM photodiodes with very low bias voltage,” presented at the Device Res. Conf., Boulder, CO, 1988.
    • (1988) Device Res. Conf.
    • van Zeghbroeck, B.J.1
  • 12
    • 0019599838 scopus 로고
    • A novel heterostructure interdigital photodetector with picosecond optical response
    • L. Figuera and C.W. Slayman, “A novel heterostructure interdigital photodetector with picosecond optical response,” IEEE Electron Device Lett., vol. EDL-2, pp. 208–210, 1981.
    • (1981) IEEE Electron Device Lett. , vol.2 EDL , pp. 208-210
    • Figuera, L.1    Slayman, C.W.2
  • 13
    • 0023670581 scopus 로고
    • UltraWide-Band long-wavelength p-i-n photodetectors
    • J.E. Bowers and C.A. Burris, “UltraWide-Band long-wavelength p-i-n photodetectors,” IEEE J. Lightwave Technol., vol. LT-5, pp. 1339–1350, 1987.
    • (1987) IEEE J. Lightwave Technol. , vol.5 LT , pp. 1339-1350
    • Bowers, J.E.1    Burris, C.A.2
  • 14
    • 0021096913 scopus 로고
    • 100 GHz bandwidth planar GaAs Schottky photodiode
    • S.Y. Wang and D.M. Bloom, “100 GHz bandwidth planar GaAs Schottky photodiode,” Electron. Lett., vol. 19, pp. 554–555, 1983.
    • (1983) Electron. Lett. , vol.19 , pp. 554-555
    • Wang, S.Y.1    Bloom, D.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.