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Volumn 164, Issue C, 1988, Pages 301-308
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Physical properties of II-VI binary and multi-component compound films and heterostructures fabricated by chemical vapour deposition
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Author keywords
[No Author keywords available]
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Indexed keywords
SEMICONDUCTOR DEVICE MANUFACTURE--CHEMICAL VAPOR DEPOSITION;
SEMICONDUCTOR DEVICES--HETEROJUNCTIONS;
ENERGY BAND DISCONTINUITIES;
HETEROSTRUCTURES;
MOLECULAR BEAM INTENSITY RATIO;
MULTI-COMPONENT COMPOUND FILMS;
QUASI-CLOSED CHAMBER;
SEMICONDUCTING FILMS;
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EID: 0024088179
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/0040-6090(88)90153-8 Document Type: Article |
Times cited : (44)
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References (53)
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