Increased Drain Saturation Current in Ultrathin Silicon-on-Insulator (SOI) MOS Transistors

IEEE Electron Device Letters

Volumn 9, Issue 9, 1988, Pages 460-463

  Sturm, James C ^a   Tokunaga, K ^a   Colinge, Jean Pierre ^b  

^a PRINCETON UNIVERSITY   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

BULK MOS TRANSISTORS; DRAIN SATURATION CURRENT; SILICON-ON-INSULATOR MOS TRANSISTORS; ULTRATHIN SOI TRANSISTORS;

SEMICONDUCTOR DEVICES, MOS;

EID: 0024072715     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.6945     Document Type: Article

References (9)

1. J.-P. Colinge, presented at the 1987 SOS/SOI Technology Workshop, Durango, CO, Oct. 1987.
2. J.-P. Colinge, “Subthreshold slope of thin-film SOI MOSFET's”, IEEE Electron Device Lett., vol. EDL-7, pp. 247-276, 1986.
3. J.-P. Colinge, “Hot-electron effects in silicon-on-insulator n-channel MOSFET's”, IEEE Trans. Electron Devices, vol. ED-34, pp. 2173-2177, 1986.
4. M. R. Pinto, C. S. Rafferty, and R. W. Dutton, “Pisces II: Poisson and continuity equation solver”, Stanford Electron. Lab., Stanford, CA, 1984.
5. S. C. Sun and J. D. Plummer, “Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces”, IEEE Trans. Electron Devices, vol. ED-27, pp. 1497-1508, 1980.
6. J.-P. Colinge, “Transconductance of silicon-on-insulator (SOI) MOSFET's”, IEEE Electron Device Lett., vol. EDL-6, pp. 573-575, 1985.
7. C. Jaussaud, J. Margail, J. Stoemenos, and M. Bruel, “High temperature annealing of SIMOX layers: Physical mechanisms of oxygen segregation”, in Proc. Symp. Mat. Res. Soc., vol. 107, J. C. Sturm, C. K. Chen, L. Pfeiffer, and P. L. F. Hemment, Eds., 1988 pp. 17-28.
8. R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits. New York: Wiley, 1977, p. 356.
9. H. K. Lim and J. G. Fossum, “A charge based model for SOI MOSFET's”, IEEE Trans. Electron Devices, vol. ED-32, pp. 446-457, 1985.